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公开(公告)号：US20240136800A1
公开(公告)日：2024-04-25
申请号：US18546593
申请日：2022-01-27
发明人： Bruno Jentzsch , Hubert Halbritter , Alexander Behres , Alvaro Gomez-lglesias , Christian Lauer , Simon Baumann
CPC分类号： H01S5/343 , H01S5/2031 , H01S5/3013 , H01S5/3095
摘要： In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.
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公开(公告)号：US20240235164A9
公开(公告)日：2024-07-11
申请号：US18546593
申请日：2022-01-27
发明人： Bruno Jentzsch , Hubert Halbritter , Alexander Behres , Alvaro Gomez-lglesias , Christian Lauer , Simon Baumann
CPC分类号： H01S5/343 , H01S5/2031 , H01S5/3013 , H01S5/3095
摘要： In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.
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公开(公告)号：US20240120443A1
公开(公告)日：2024-04-11
申请号：US18546019
申请日：2021-02-17
发明人： Xiaojun Chen , Heng Wang , Jong Ho Na , Alvaro Gomez-lglesias
CPC分类号： H01L33/14 , H01L33/06 , H01L33/325
摘要： In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopant concentrations of the quantum barrier layers gradually increase.
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4.发明公开公开(公告)号：US20240204137A1
公开(公告)日：2024-06-20
申请号：US18554701
申请日：2022-04-05
IPC分类号： H01L33/24 , H01L25/075 , H01L33/62
CPC分类号： H01L33/24 , H01L25/0753 , H01L33/62
摘要： In an embodiment a radiation-emitting semiconductor chip includes a first doped region, an active region adjacent to the first doped region and a second doped region arranged on a side of the active region facing away from the first doped region, wherein the first doped region is structured in a step-like manner and includes several planes in a direction perpendicular to a main extension plane of the semiconductor chip, and wherein the active region covers the first doped region on a side surface and a top surface.
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