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公开(公告)号:US20240272281A1
公开(公告)日:2024-08-15
申请号:US18682042
申请日:2022-08-05
发明人: Martin HETZL , Reiner WINDISCH , Jens EBBECKE
CPC分类号: G01S7/4814 , G01S7/484 , G01S7/4865 , H01S5/1092 , G01S17/10 , H01S5/34
摘要: An optical sensor arrangement, for example for a LiDAR system, includes an emitter unit and a receiver unit. The emitter unit includes a semiconductor laser configured to emit coherent electromagnetic radiation having at least two wavelengths. Furthermore, the emitter unit is configured to direct the emitted electromagnetic radiation at a remote target, the receiver unit including at least one optical sensor configured to selectively detect electromagnetic radiation depending on the at least two wavelengths. The receiver unit is arranged relative to the emitter unit and configured such that electromagnetic radiation scattered or reflected by the remote target is detectable on the optical sensor.
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2.
公开(公告)号:US20240353541A1
公开(公告)日:2024-10-24
申请号:US18682121
申请日:2022-07-29
发明人: Jens EBBECKE
IPC分类号: G01S7/4865 , G01S17/10
CPC分类号: G01S7/4865 , G01S17/10
摘要: A measurement method includes emitting a transmission signal comprising at least one light pulse, wherein an amplitude of an intensity of the light pulse is modulated with a modulation frequency, detecting a receiving signal comprising at least a part of the transmission signal that is reflected from an external object, selecting at least one frequency component of the receiving signal corresponding to the modulation frequency of the transmission signal, and determining a distance to the external object from a time difference between the emission of the transmission signal and the detection of the selected frequency component of the receiving signal.
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3.
公开(公告)号:US20240162211A1
公开(公告)日:2024-05-16
申请号:US18550337
申请日:2022-02-09
发明人: Christian LAUER , Jens EBBECKE
CPC分类号: H01L25/167 , H01L33/005 , H01L33/025 , H01L33/20 , H01L33/06
摘要: The invention relates to a method for producing an optoelectronic semiconductor chip, component, including the following steps: —providing an epitaxial semiconductor layer sequence with an active zone, which is configured to generate electromagnetic radiation during operation, —structuring the epitaxial semiconductor layer sequence so that at least one lateral surface is produced in the epitaxial semiconductor layer sequence, —introducing aluminum atoms at the lateral surface into the epitaxial semiconductor layer sequence, so that a band gap of the active zone at the lateral surface is increased. The invention also relates to an optoelectronic semiconductor chip.
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