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    Contact doping and annealing systems and processes for nanowire thin films
    1.
    发明授权
    Contact doping and annealing systems and processes for nanowire thin films 失效
    接触纳米线薄膜的掺杂和退火系统和工艺

    公开(公告)号：US07569503B2

    公开(公告)日：2009-08-04

    申请号：US11271488

    申请日：2005-11-10

    申请人： Yaoling Pan ,  David P. Stumbo

    发明人： Yaoling Pan ,  David P. Stumbo

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7606 ,  H01L29/78696 ,  Y10S977/901 ,  Y10S977/963

    摘要： Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

    摘要翻译： 提供本发明的实施例用于改进的接触掺杂和退火系统和工艺。 在实施例中，等离子体离子浸没注入（PIII）工艺用于纳米线和其它基于纳米元件的薄膜器件的接触掺杂。 根据本发明的另外的实施例，使用使用低于约100mJ / cm 2（例如，小于约50mJ / cm 2，例如约2至18mJ / cm 2）的相对低的激​​光能量密度的激光能量的脉冲激光退火 以在基底上退火纳米线和其它基于纳米元件的器件，例如低温柔性衬底，例如塑料衬底。

    Fully Integrated Organic Layered Processes for Making Plastic Electronics Based on Conductive Polymers and Semiconductor Nanowires
    2.
    发明申请
    Fully Integrated Organic Layered Processes for Making Plastic Electronics Based on Conductive Polymers and Semiconductor Nanowires 审中-公开
    基于导电聚合物和半导体纳米线制造塑料电子的全集成有机分层工艺

    公开(公告)号：US20080128688A1

    公开(公告)日：2008-06-05

    申请号：US12016701

    申请日：2008-01-18

    申请人： Yaoling Pan ,  Francisco Leon ,  David P. Stumbo

    发明人： Yaoling Pan ,  Francisco Leon ,  David P. Stumbo

    IPC分类号： H01L51/05

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0541 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764

    摘要： The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; depositing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; depositing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; depositing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones of the source and drain regions.

    摘要翻译： 本发明涉及使用并入和/或设置在导电聚合物层附近的纳米线（或诸如纳米带，纳米管等的其它纳米结构）的薄膜晶体管，以及用于生产这种晶体管的生产可扩展方法。 特别地，公开了包含导电聚合材料如聚苯胺（PANI）或聚吡咯（PPY）和一个或多个纳米线的复合材料，其中并入其中。 还提供了几种纳米线TFT制造方法，其在一个示例性实施例中包括提供器件衬底; 在器件衬底上沉积第一导电聚合物材料层; 限定所述导电聚合物层中的一个或多个栅极接触区域; 在所述导电聚合物层上以足够的纳米线密度沉积多个纳米线以实现工作电流水平; 在所述多个纳米线上沉积第二导电聚合物材料层; 以及在所述第二导电聚合物材料层中形成源极和漏极接触区域，从而提供与所述多个纳米线的电连接性，由此所述纳米线形成在所述源极和漏极区域中的相应长度之间具有长度的沟道。

    Selective processing of semiconductor nanowires by polarized visible radiation
    4.
    发明授权
    Selective processing of semiconductor nanowires by polarized visible radiation 有权
    通过极化可见辐射选择性处理半导体纳米线

    公开(公告)号：US07786024B2

    公开(公告)日：2010-08-31

    申请号：US11936590

    申请日：2007-11-07

    申请人： David P. Stumbo ,  Yaoling Pan ,  Costas P. Grigoropoulos ,  Nipun Misra

    发明人： David P. Stumbo ,  Yaoling Pan ,  Costas P. Grigoropoulos ,  Nipun Misra

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B23K26/073 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0673 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.

    摘要翻译： 提供了用于退火半导体纳米线并用于制造电气器件的方法，系统和装置。 纳米线沉积在基底上。 形成多个电极。 纳米线与多个电极电接触。 纳米线是掺杂的。 将极化激光束施加到纳米线以退火至少一部分纳米线。 纳米线可以基本上平行于轴线对准。 激光束可以以各种方式被极化，以通过纳米线来改变施加的激光束的辐射的吸收。 例如，激光束可以在基本上平行于轴线或基本上垂直于轴线的方向上极化，以实现不同的纳米线吸收曲线。

    Methods for Nanostructure Doping
    6.
    发明申请
    Methods for Nanostructure Doping 审中-公开
    纳米结构掺杂方法

    公开(公告)号：US20100167512A1

    公开(公告)日：2010-07-01

    申请号：US12720125

    申请日：2010-03-09

    申请人： Yaoling Pan ,  Jian Chen ,  Francisco Leon ,  Shahriar Mostarshed ,  Linda T. Romano ,  Vijendra Sahi ,  David P. Stumbo

    发明人： Yaoling Pan ,  Jian Chen ,  Francisco Leon ,  Shahriar Mostarshed ,  Linda T. Romano ,  Vijendra Sahi ,  David P. Stumbo

    IPC分类号： H01L21/22

    CPC分类号： H01L29/0665 ,  B81C1/00698 ,  B81C2201/0173 ,  B82Y10/00 ,  H01L21/2256 ,  H01L21/268 ,  H01L29/0673

    摘要： Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure.

    摘要翻译： 公开了掺杂纳米结构的方法，例如纳米线。 该方法提供了改进现有掺杂纳米结构方法的各种方法。 这些实施方案包括在后纳米结构合成掺杂期间使用牺牲层来促进纳米结构内的均匀掺杂剂分布。 在另一个实施例中，当使用高能离子注入时，使用高温环境退火纳米结构损伤。 在另一个实施方案中，使用快速热退火来将掺杂剂从纳米结构上的掺杂剂层驱动到纳米结构中。 在另一个实施例中，提供了一种在塑料衬底上掺杂纳米线的方法，其包括在塑料衬底上沉积电介质叠层以保护塑料衬底免于在掺杂过程期间损坏。 还提供了一种实施方案，其包括在合成纳米结构中在不同时间选择性地使用高浓度的掺杂剂材料以在所得纳米结构内实现新的晶体结构。

    Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
    7.
    发明授权
    Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires 失效
    用于制造基于导电聚合物和半导体纳米线的塑料电子器件的完全集成的有机分层工艺

    公开(公告)号：US07345307B2

    公开(公告)日：2008-03-18

    申请号：US11233503

    申请日：2005-09-22

    申请人： Yaoling Pan ,  Francisco Leon ,  David P. Stumbo

    发明人： Yaoling Pan ,  Francisco Leon ,  David P. Stumbo

    IPC分类号： H01L29/10

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0541 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764

    摘要： The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; depositing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; depositing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; depositing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones of the source and drain regions.

    摘要翻译： 本发明涉及使用并入和/或设置在导电聚合物层附近的纳米线（或诸如纳米带，纳米管等的其它纳米结构）的薄膜晶体管，以及用于生产这种晶体管的生产可扩展方法。 特别地，公开了包含导电聚合材料如聚苯胺（PANI）或聚吡咯（PPY）和一个或多个纳米线的复合材料，其中并入其中。 还提供了几种纳米线TFT制造方法，其在一个示例性实施例中包括提供器件衬底; 在器件衬底上沉积第一导电聚合物材料层; 限定所述导电聚合物层中的一个或多个栅极接触区域; 在所述导电聚合物层上以足够的纳米线密度沉积多个纳米线以实现工作电流水平; 在所述多个纳米线上沉积第二导电聚合物材料层; 以及在所述第二导电聚合物材料层中形成源极和漏极接触区域，从而提供与所述多个纳米线的电连接性，由此所述纳米线形成在所述源极和漏极区域中的相应长度之间具有长度的沟道。