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Patent Agency Ranking
公开(公告)号：US20180267397A1
公开(公告)日：2018-09-20
申请号：US15539701
申请日：2017-04-17
Inventor： Tao Sun
IPC: G03F1/00 , G02F1/1335 , G02F1/1362
CPC classification number: G03F1/14 , G02F1/133516 , G02F1/136227 , G02F2001/136222 , G02F2201/123 , G03F1/00 , G03F7/0007
Abstract: The present invention provides a mask structure and a COA type array substrate. The mask structure comprises a central light shielding portion (1), a peripheral light shielding portion (3) surrounding the central light shielding portion (1) and conforming to an outer contour shape of the central light shielding portion (1) and a circumambient hollow slit (5) sandwiched between the peripheral light shielding portion (3) and the central light shielding portion (1). The exposure light will diffract through the hollow slit (5) to result in the propagation of the reverse bending and the energy intensity gradient. In conjunction with the negative photoresist, the taper of the finally manufactured color filter layer through hole can be made to be gentle to improve the electrical connection quality between the pixel electrodes and the metal material signal lines for avoiding the display failure.
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公开(公告)号：US10459331B2
公开(公告)日：2019-10-29
申请号：US15539701
申请日：2017-04-17
Inventor： Tao Sun
IPC: G03F1/36 , G03F1/00 , G02F1/1362 , G02F1/1335 , G03F7/00
Abstract: The present invention provides a mask structure and a COA type array substrate. The mask structure comprises a central light shielding portion (1), a peripheral light shielding portion (3) surrounding the central light shielding portion (1) and conforming to an outer contour shape of the central light shielding portion (1) and a circumambient hollow slit (5) sandwiched between the peripheral light shielding portion (3) and the central light shielding portion (1). The exposure light will diffract through the hollow slit (5) to result in the propagation of the reverse bending and the energy intensity gradient. In conjunction with the negative photoresist, the taper of the finally manufactured color filter layer through hole can be made to be gentle to improve the electrical connection quality between the pixel electrodes and the metal material signal lines for avoiding the display failure.
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公开(公告)号：US10288923B2
公开(公告)日：2019-05-14
申请号：US15520412
申请日：2017-03-21
Inventor： Tao Sun
IPC: G02F1/1333 , G02F1/1368 , G02F1/1335 , G02F1/1362
Abstract: This disclosure discloses a COA array substrate, including a base substrate, and an array of pixel structures disposed on the base substrate, wherein the pixel structure is provided with a color filter layer, the color filter layer includes a first portion and a second portion, the first portion of the color filter layer covers a display region of the pixel structure correspondingly, the second portion of the color filter layer covers a non-display region of the pixel structure correspondingly; in the second portion of the color filter layer is provided with vent holes. This disclosure also discloses a liquid crystal display panel, including an array substrate and a cell aligning substrate disposed oppositely, the liquid crystal molecules are disposed between the array substrate and the cell aligning substrate, wherein the array substrate described above uses the COA array substrate.
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公开(公告)号：US10224497B2
公开(公告)日：2019-03-05
申请号：US15544019
申请日：2017-04-26
Inventor： Lin Meng , Caiqin Chen , Tao Sun
Abstract: Disclosed is a flexible substrate, comprising a first organic layer, a first inorganic layer, a second organic layer and a second inorganic layer. The first inorganic layer is located on the first organic layer. The first inorganic layer comprises first strips which are spaced. The first strip comprises a first middle part and two first side parts. The second organic layer covers the first inorganic layer. The second inorganic layer is located on one side of the second organic layer remote from the first organic layer. The second inorganic layer comprises second strips which are spaced. The second strip comprises a second middle part and two second side parts. An extension direction of the second strips is the same as an extension direction of the first strips, the second organic layer is partially interposed between two first strips and between two second strips which are adjacent.
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公开(公告)号：US20180212043A1
公开(公告)日：2018-07-26
申请号：US15327470
申请日：2016-12-29
Inventor： Tao Sun
IPC: H01L29/66 , H01L27/12 , H01L29/417 , H01L29/786
CPC classification number: H01L29/66765 , B81C2201/0108 , G02F1/133345 , G02F1/136227 , G03F1/80 , G03F5/16 , G03F7/0035 , G03F7/0041 , G03F7/422 , G03F7/427 , H01L21/0217 , H01L21/02274 , H01L21/02592 , H01L21/0262 , H01L21/0274 , H01L21/205 , H01L21/2855 , H01L21/30604 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/31058 , H01L21/31133 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/32134 , H01L21/32139 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/518 , H01L29/78603 , H01L29/78609 , H01L29/78618 , H01L29/78669 , H01L2924/13069 , H05K2201/0338 , H05K2201/0361
Abstract: Disclosed is a method for manufacturing a thin film transistor. The method includes steps of etching a second metal layer and a semiconductor layer to form a boundary region of a thin film transistor; etching the second metal layer again to form a source, a drain and a back channel region of the thin film transistor; removing residual photoresist via an ashing procedure; and etching the semiconductor layer again to form a conductive channel of the thin film transistor. According to the method, the electric leakage problem of thin film transistor due to diffusion of copper and contamination of organic stripping liquid can be eliminated.
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