TFT SUBSTRATE MANUFACTURING METHOD AND TFT SUBSTRATE

    公开(公告)号:US20180308864A1

    公开(公告)日:2018-10-25

    申请号:US15529510

    申请日:2017-04-11

    Abstract: The present invention provides a TFT substrate manufacturing method and a TFT substrate. In the TFT substrate manufacturing method of the present invention, a pattern of the gate metal layer has been designed such that reflective blocks are included in a gate metal layer at locations corresponding to areas in which connection holes are to be formed so that in a process of forming the connection holes, light is reflected by the reflective blocks to enhance intensity of exposure on locations where the connection holes are formed. Thus, even under the condition that limit exposure size of an existing exposure machine is constrained, it is still possible to ensure full exposure in forming the connection holes in a high PPI display panel device to thereby realize production of high display panel products.

    Flexible substrate and flexible display

    公开(公告)号:US10224497B2

    公开(公告)日:2019-03-05

    申请号:US15544019

    申请日:2017-04-26

    Abstract: Disclosed is a flexible substrate, comprising a first organic layer, a first inorganic layer, a second organic layer and a second inorganic layer. The first inorganic layer is located on the first organic layer. The first inorganic layer comprises first strips which are spaced. The first strip comprises a first middle part and two first side parts. The second organic layer covers the first inorganic layer. The second inorganic layer is located on one side of the second organic layer remote from the first organic layer. The second inorganic layer comprises second strips which are spaced. The second strip comprises a second middle part and two second side parts. An extension direction of the second strips is the same as an extension direction of the first strips, the second organic layer is partially interposed between two first strips and between two second strips which are adjacent.

    TFT SUBSTRATE MANUFACTURING METHOD AND TFT SUBSTRATE

    公开(公告)号:US20190305005A1

    公开(公告)日:2019-10-03

    申请号:US16443836

    申请日:2019-06-17

    Abstract: The present invention provides a TFT substrate manufacturing method and a TFT substrate. In the TFT substrate manufacturing method of the present invention, a pattern of the gate metal layer has been designed such that reflective blocks are included in a gate metal layer at locations corresponding to areas in which connection holes are to be formed so that in a process of forming the connection holes, light is reflected by the reflective blocks to enhance intensity of exposure on locations where the connection holes are formed. Thus, even under the condition that limit exposure size of an existing exposure machine is constrained, it is still possible to ensure full exposure in forming the connection holes in a high PPI display panel device to thereby realize production of high display panel products.

    TFT substrate manufacturing method and TFT substrate

    公开(公告)号:US10608021B2

    公开(公告)日:2020-03-31

    申请号:US16443836

    申请日:2019-06-17

    Abstract: The present invention provides a TFT substrate manufacturing method and a TFT substrate. In the TFT substrate manufacturing method of the present invention, a pattern of the gate metal layer has been designed such that reflective blocks are included in a gate metal layer at locations corresponding to areas in which connection holes are to be formed so that in a process of forming the connection holes, light is reflected by the reflective blocks to enhance intensity of exposure on locations where the connection holes are formed. Thus, even under the condition that limit exposure size of an existing exposure machine is constrained, it is still possible to ensure full exposure in forming the connection holes in a high PPI display panel device to thereby realize production of high display panel products.

    TFT substrate manufacturing method and TFT substrate

    公开(公告)号:US10475821B2

    公开(公告)日:2019-11-12

    申请号:US15529510

    申请日:2017-04-11

    Abstract: The present invention provides a TFT substrate manufacturing method and a TFT substrate. In the TFT substrate manufacturing method of the present invention, a pattern of the gate metal layer has been designed such that reflective blocks are included in a gate metal layer at locations corresponding to areas in which connection holes are to be formed so that in a process of forming the connection holes, light is reflected by the reflective blocks to enhance intensity of exposure on locations where the connection holes are formed. Thus, even under the condition that limit exposure size of an existing exposure machine is constrained, it is still possible to ensure full exposure in forming the connection holes in a high PPI display panel device to thereby realize production of high display panel products.

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