公开(公告)号：US20190139758A1

公开(公告)日：2019-05-09

申请号：US15803259

申请日：2017-11-03

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Ernest E. Allen ,  Costel Biloiu ,  Daniel McGillicuddy

IPC分类号： H01L21/02 ,  C23C14/34 ,  H01L21/8234 ,  C23C14/48

摘要： Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

公开(公告)号：US20180286653A1

公开(公告)日：2018-10-04

申请号：US15471507

申请日：2017-03-28

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Frank Sinclair ,  Joseph C. Olson ,  Costel Biloiu ,  Alexandre Likhanskii ,  Peter F. Kurunczi

IPC分类号： H01J49/06 ,  H01J49/40 ,  H01J49/10

CPC分类号： H01J49/061 ,  H01J37/05 ,  H01J37/3171 ,  H01J49/10 ,  H01J49/22

摘要： An electrodynamic mass analysis system which has the capability of filtering unwanted species from an extracted ion beam without the use of a mass analyzer magnet is disclosed. The electrodynamic mass analysis system includes an ion source and an electrode disposed outside the ion source. The ion source and the electrode are biased relative to one another so as to emit pulses of ions. Each of these pulses enters a tube where each ion travels at a speed related to its mass. Thus, ions of the same mass travel in clusters through the tube. Ions reach the distal end of the tube separated temporally and spatially from one another based on their mass. The ions then enter a deflector, which is energized so as to allow the cluster of ions having the desired mass to pass through a resolving aperture disposed at the exit of the deflector.

公开(公告)号：US10004133B2

公开(公告)日：2018-06-19

申请号：US15644062

申请日：2017-07-07

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F. R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H01L21/3065 ,  H05H1/24 ,  H01L21/308 ,  H01L21/66 ,  H01J37/32

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

公开(公告)号：US09620335B2

公开(公告)日：2017-04-11

申请号：US15065141

申请日：2016-03-09

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Costel Biloiu ,  Nini Munoz ,  Ludovic Godet ,  Anthony Renau

IPC分类号： H01J37/32

CPC分类号： H01J37/32532 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32568 ,  H01J2237/3365

摘要： A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

公开(公告)号：US09514912B2

公开(公告)日：2016-12-06

申请号：US14523428

申请日：2014-10-24

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Costel Biloiu ,  Peter F. Kurunczi ,  Tyler Rockwell ,  Christopher Campbell ,  Vikram Singh ,  Svetlana Radovanov

IPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/32 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J37/3171 ,  H01J37/32357 ,  H01J2237/061 ,  H01J2237/30472

摘要： A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.

摘要翻译： 一种处理设备可以包括：提取板，沿着等离子体室的一侧设置，所述提取板具有第一和第二孔，以及在第一和第二孔之间的中间部分，第一和第二孔被配置为限定第一和第二孔 当等离子体存在于等离子体室中并且在提取板和基板之间施加提取电压时的第二离子束; 隐藏的偏转电极，设置在等离子体室外部的中间部分附近，并与提取板电隔离; 以及隐藏的偏转电极电源，用于向隐藏的偏转电极施加偏置电压，其中偏置电压被配置为修改离子的平均入射角和/或以入射角为中心的入射角范围， 第一和第二离子束。

公开(公告)号：US20150179409A1

公开(公告)日：2015-06-25

申请号：US14139679

申请日：2013-12-23

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Costel Biloiu ,  Nini Munoz ,  Ludovic Godet ,  Anthony Renau

IPC分类号： H01J37/32

CPC分类号： H01J37/32532 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32568 ,  H01J2237/3365

摘要： A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

摘要翻译： 处理装置可以包括耦合到等离子体室的等离子体源，以在等离子体室中产生等离子体;提取板，其具有沿着等离子体室的一侧设置的孔; 偏转电极，其设置在所述孔附近并且被配置为当所述等离子体存在于所述等离子体室中时限定一对等离子体半月板; 以及偏转电极电源，用于相对于等离子体向偏转电极施加偏置电压，其中施加到偏转电极的第一偏置电压被配置为产生从等离子体通过孔提取的离子的第一入射角， 并且施加到偏转电极的第二偏置电压被配置为产生从等离子体通过孔提取的离子的入射角，第二入射角不同于第一入射角。

公开(公告)号：US11424112B2

公开(公告)日：2022-08-23

申请号：US15803259

申请日：2017-11-03

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Ernest E. Allen ,  Costel Biloiu ,  Daniel McGillicuddy

IPC分类号： H01J37/34 ,  H01J37/09 ,  H01J37/317 ,  H01J37/32 ,  C23C14/04 ,  C23C14/48 ,  C23C14/34

摘要： Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

公开(公告)号：US10192727B2

公开(公告)日：2019-01-29

申请号：US15471507

申请日：2017-03-28

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Frank Sinclair ,  Joseph C. Olson ,  Costel Biloiu ,  Alexandre Likhanskii ,  Peter F. Kurunczi

IPC分类号： H01J37/05 ,  H01J49/22 ,  H01J49/06 ,  H01J37/317 ,  H01J49/10

摘要： An electrodynamic mass analysis system which has the capability of filtering unwanted species from an extracted ion beam without the use of a mass analyzer magnet is disclosed. The electrodynamic mass analysis system includes an ion source and an electrode disposed outside the ion source. The ion source and the electrode are biased relative to one another so as to emit pulses of ions. Each of these pulses enters a tube where each ion travels at a speed related to its mass. Thus, ions of the same mass travel in clusters through the tube. Ions reach the distal end of the tube separated temporally and spatially from one another based on their mass. The ions then enter a deflector, which is energized so as to allow the cluster of ions having the desired mass to pass through a resolving aperture disposed at the exit of the deflector.

公开(公告)号：US20160071704A1

公开(公告)日：2016-03-10

申请号：US14942414

申请日：2015-11-16

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Victor M. Benveniste ,  Svetlana Radovanov ,  Costel Biloiu

IPC分类号： H01J37/32

CPC分类号： H01J37/32807 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3065

摘要： Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface seals the volume of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.

摘要翻译： 公开了电感耦合RF等离子体源，其提供磁约束以减少等离子体损耗和法拉第屏蔽以抑制寄生电容性部件。 电感耦合RF等离子体系统包括RF电源，等离子体室，永磁体阵列和天线阵列。 等离子体室由壁和具有内表面和外表面的电介质窗构成，其中内表面密封等离子体室的体积。 平行导电永磁体的阵列电互连并且嵌入介于靠近内表面的电介质窗壁内，并在一端接地。 永磁体阵列元件在等离子体室中等离子体交替地被磁化，以形成多尖点磁场。 天线阵列可以由平行管组成，RF电流通过该平行管循环。 天线阵列垂直于永磁体阵列定向。

公开(公告)号：US20140326594A1

公开(公告)日：2014-11-06

申请号：US13886683

申请日：2013-05-03

申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

发明人： Costel Biloiu ,  David P. Sporleder ,  Jay Scheuer ,  Neil Bassom

IPC分类号： H01J37/30 ,  C23F4/00 ,  H01J37/305

CPC分类号： C23F4/00 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/022 ,  H01J2237/3341

摘要： An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.

摘要翻译： 离子源包括离子源室，设置在离子源室内的并且被配置为发射电子以产生电弧等离子体的阴极，以及构造成将电子排斥回到电弧等离子体中的反射器。 离子源室和阴极可以包括难熔金属。 离子源室还包括被配置为向离子源室提供卤素物质的气体源。 反应性插入物与卤素物质相互作用，以在离子源室内的难熔金属材料的小于第二蚀刻速率的第一组操作条件下产生耐热金属材料在离子源室内的第一蚀刻速率 当反应性插入物未设置在离子源室内时，在第一组操作条件下。