发明授权
- 专利标题： Apparatus and techniques to treat substrates using directional plasma and reactive gas
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申请号： US15644062申请日： 2017-07-07
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公开(公告)号： US10004133B2公开(公告)日： 2018-06-19
- 发明人: Shurong Liang , Costel Biloiu , Glen F. R. Gilchrist , Vikram Singh , Christopher Campbell , Richard Hertel , Alexander Kontos , Piero Sferlazzo , Tsung-Liang Chen
- 申请人： Varian Semiconductor Equipment Associates, Inc.
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H05H1/24 ; H01L21/308 ; H01L21/66 ; H01J37/32
摘要：
An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
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