公开(公告)号：US10004133B2

公开(公告)日：2018-06-19

申请号：US15644062

申请日：2017-07-07

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F. R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H01L21/3065 ,  H05H1/24 ,  H01L21/308 ,  H01L21/66 ,  H01J37/32

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

公开(公告)号：US20170311430A1

公开(公告)日：2017-10-26

申请号：US15644062

申请日：2017-07-07

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F.R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H05H1/24 ,  H01L21/66 ,  H01L21/308 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

公开(公告)号：US20170062185A1

公开(公告)日：2017-03-02

申请号：US14840531

申请日：2015-08-31

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Jay Wallace ,  Ernest Allen ,  Richard Hertel ,  Kevin Daniels ,  Glen Gilchrist

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/02 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/20228 ,  H01L21/68764

摘要： A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.

摘要翻译： 一种用于离子束装置的气体注入系统，所述气体注入系统包括提取板，形成在所述提取板中用于允许离子束通过的提取孔，在所述提取板的第一侧上可移除地紧固到所述提取板的第一气体分配器 所述提取孔，所述第一气体分配器具有形成在其中的气体孔口;第二气体分配器，其在所述提取孔的与所述第一侧相对的第二侧上可拆卸地紧固到所述提取板，所述第二气体分配器具有形成在其中的气体孔口; 第一气体管道，其延伸穿过第一气体分配器和安装到提取板的气体歧管之间的提取板，以及第二气体导管，其延伸穿过第二气体分配器之间的提取板，气体歧管和残留物去除气体源连接到 气体歧管。

公开(公告)号：US20170042010A1

公开(公告)日：2017-02-09

申请号：US14970738

申请日：2015-12-16

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F.R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H05H1/24 ,  H01L21/308 ,  H01L21/66 ,  H01L21/3065

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

摘要翻译： 一种处理基材的设备。 该装置可以包括反应气体源，其具有布置在处理室中的反应气体出口，反应气体出口将第一反应气体引导到基底; 等离子体室，其耦合到所述处理室并且包括提取板，所述提取板具有沿着第一方向延伸的提取孔，所述提取孔设置在所述处理室内并且可沿着与所述反应气体源相对的第一位置和与所述第一方向垂直的第二方向 面向提取孔的第二位置; 以及设置在所述反应气体出口和所述提取孔之间的气体限流器，所述气体流量限制器在至少所述等离子体室和衬底台之间限定差分泵送通道。

公开(公告)号：US10062548B2

公开(公告)日：2018-08-28

申请号：US14840531

申请日：2015-08-31

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Jay Wallace ,  Ernest Allen ,  Richard Hertel ,  Kevin Daniels ,  Glen Gilchrist

IPC分类号： H01J37/32 ,  H01J37/02 ,  H01J37/305 ,  H01L21/687

CPC分类号： H01J37/3244 ,  H01J37/02 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/20228 ,  H01L21/68764

摘要： A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.

公开(公告)号：US09706634B2

公开(公告)日：2017-07-11

申请号：US14970738

申请日：2015-12-16

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F. R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H01H1/24 ,  H05H1/24 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/66

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.