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公开(公告)号：US10193066B2
公开(公告)日：2019-01-29
申请号：US15639029
申请日：2017-06-30
IPC分类号： H01L21/3065 , H01L21/3213 , H01J37/32 , H01L21/67 , H01L45/00
摘要： A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.
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公开(公告)号：US09706634B2
公开(公告)日：2017-07-11
申请号：US14970738
申请日：2015-12-16
发明人： Shurong Liang , Costel Biloiu , Glen F. R. Gilchrist , Vikram Singh , Christopher Campbell , Richard Hertel , Alexander Kontos , Piero Sferlazzo , Tsung-Liang Chen
IPC分类号： H01H1/24 , H05H1/24 , H01L21/3065 , H01L21/308 , H01L21/66
CPC分类号： H05H1/24 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J2237/327 , H01L21/3065 , H01L21/308 , H01L22/12 , H01L22/20
摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
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公开(公告)号：US10004133B2
公开(公告)日：2018-06-19
申请号：US15644062
申请日：2017-07-07
发明人： Shurong Liang , Costel Biloiu , Glen F. R. Gilchrist , Vikram Singh , Christopher Campbell , Richard Hertel , Alexander Kontos , Piero Sferlazzo , Tsung-Liang Chen
IPC分类号： H01L21/3065 , H05H1/24 , H01L21/308 , H01L21/66 , H01J37/32
CPC分类号： H05H1/24 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J2237/327 , H01L21/3065 , H01L21/308 , H01L22/12 , H01L22/20
摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
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公开(公告)号：US20190006587A1
公开(公告)日：2019-01-03
申请号：US15639029
申请日：2017-06-30
摘要： A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.
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