公开(公告)号：US10535522B1

公开(公告)日：2020-01-14

申请号：US16107275

申请日：2018-08-21

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Gang Shu ,  Glen Gilchrist ,  Shurong Liang

IPC分类号： H01L21/265 ,  H01J37/317 ,  H01J37/305

摘要： Provided herein are techniques for treating vertical surface features of a semiconductor device with ions. In some embodiments, a method for forming a semiconductor device, may include providing a set of surface features extending from a substrate, the set of surface features including a sidewall. The method may include treating the sidewall with an ion beam disposed at an angle, the angle being a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the substrate. The method may further include rotating the substrate about the perpendicular to the plane while the sidewall is treated with the ion beam to impact an entire height of the sidewall with the ion beam.

公开(公告)号：US20190006587A1

公开(公告)日：2019-01-03

申请号：US15639029

申请日：2017-06-30

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Glen F. R. Gilchrist ,  Raees Pervaiz ,  Kenneth Starks ,  Shurong Liang ,  Tyler Rockwell

IPC分类号： H01L45/00 ,  H01J37/32 ,  H01L21/67

摘要： A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.

公开(公告)号：US20190006149A1

公开(公告)日：2019-01-03

申请号：US16123621

申请日：2018-09-06

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard John Hertel ,  Alex Kontos

IPC分类号： H01J37/305 ,  C23F4/00 ,  H01J37/08 ,  H01J37/147

摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

公开(公告)号：US20180076007A1

公开(公告)日：2018-03-15

申请号：US15262471

申请日：2016-09-12

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Glen FR Gilchrist ,  Shurong Liang

IPC分类号： H01J37/30

CPC分类号： H01J37/3007 ,  H01J37/32422 ,  H01J2237/3341

摘要： A workpiece processing apparatus allowing independent control of the extraction angles of charged ions and reactive neutrals is disclosed. The apparatus includes an extraction plate having an extraction aperture through which charged ions pass. Plasma sheath modulation and electric fields may be used to determine the extraction angle of the charged ions. The extraction plate also includes one or more neutral species channels, separate from the extraction aperture, through which reactive neutrals are passed at a selected extraction angle. The geometric configuration of the neutral species channels determines the extraction angle of the reactive neutrals. The neutral species channel may also comprise a suppressor, to reduce the number of charged ions that pass through the neutral species channel. The apparatus may be used for various applications, such as directed reactive ion etching.

公开(公告)号：US20170311430A1

公开(公告)日：2017-10-26

申请号：US15644062

申请日：2017-07-07

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F.R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H05H1/24 ,  H01L21/66 ,  H01L21/308 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

公开(公告)号：US10004133B2

公开(公告)日：2018-06-19

申请号：US15644062

申请日：2017-07-07

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen F. R. Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard Hertel ,  Alexander Kontos ,  Piero Sferlazzo ,  Tsung-Liang Chen

IPC分类号： H01L21/3065 ,  H05H1/24 ,  H01L21/308 ,  H01L21/66 ,  H01J37/32

CPC分类号： H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

公开(公告)号：US09997351B2

公开(公告)日：2018-06-12

申请号：US14962642

申请日：2015-12-08

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Tsung-Liang Chen ,  John Hautala ,  Shurong Liang

IPC分类号： H01L21/311 ,  H01L21/02 ,  C23C16/513 ,  H01L21/762 ,  H01L21/768 ,  C23C16/04 ,  C23C16/40

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/513 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76831

摘要： A method may include generating a plasma in a plasma chamber and directing the ions comprising at least one of a condensing species and inert gas species from the plasma to a cavity within a substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The method may further include; depositing a fill material within the cavity using the condensing species, the depositing taking place concurrently with the directing the ions, wherein the fill material accumulates on a lower surface of the cavity at a first rate, and wherein the fill material accumulates on an upper portion of a sidewall of the cavity at a second rate less than the first rate.

公开(公告)号：US10730082B2

公开(公告)日：2020-08-04

申请号：US15334732

申请日：2016-10-26

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Glen F R Gilchrist ,  Costel Biloiu ,  Shurong Liang ,  Christopher R. Campbell ,  Vikram Singh

IPC分类号： B08B7/00 ,  H01J37/32 ,  C23C16/44

摘要： A workpiece processing apparatus allowing in situ cleaning of metal deposited formed on the extraction plate and in the plasma chamber is disclosed. The apparatus includes an extraction plate having an extraction aperture through which the sputtering material is passed. The apparatus also includes a sealed volume disposed within the plasma chamber which is in communication with a cleaning aperture on the extraction plate. The sealed volume is in communication with a cleaning gas, which is excited by the plasma in the plasma chamber, and can be used to clean the exterior surface of the extraction plate. The feed gas used in the plasma chamber can be selected from a sputtering species and the cleaning gas. Since the volume in the sealed volume is separated from the rest of the plasma chamber, the cleaning of the extraction plate and the cleaning of the plasma chamber may be performed independently.

公开(公告)号：US10600616B2

公开(公告)日：2020-03-24

申请号：US16123621

申请日：2018-09-06

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard John Hertel ,  Alex Kontos

IPC分类号： H01J37/00 ,  H01J37/305 ,  H01J37/08 ,  H01J37/147 ,  C23F4/00 ,  H01J37/32

摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

公开(公告)号：US10113229B2

公开(公告)日：2018-10-30

申请号：US14976675

申请日：2015-12-21

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Tsung-Liang Chen ,  John Hautala ,  Shurong Liang ,  Joseph Olson

IPC分类号： C23C14/54 ,  H01L21/02 ,  C23C14/22 ,  H01J37/32 ,  C23C14/48 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

摘要： Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a deposition chamber coupled to the plasma source chamber, wherein the deposition chamber includes a second gas inlet for delivering a point of use (POU) gas to an area proximate a substrate disposed within the deposition chamber. Exemplary approaches further include generating an ion beam for delivery to the substrate, and modifying a pressure within the deposition chamber in the area proximate the substrate to increase an amount of reactive ions present for impacting the substrate when the ion beam is delivered to the substrate.