公开(公告)号：US20190006149A1

公开(公告)日：2019-01-03

申请号：US16123621

申请日：2018-09-06

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard John Hertel ,  Alex Kontos

IPC分类号： H01J37/305 ,  C23F4/00 ,  H01J37/08 ,  H01J37/147

摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

公开(公告)号：US10128082B2

公开(公告)日：2018-11-13

申请号：US14808612

申请日：2015-07-24

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard John Hertel ,  Alex Kontos

IPC分类号： H01J37/305 ,  H01J37/08 ,  H01J37/147 ,  C23F4/00

摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

公开(公告)号：US10600616B2

公开(公告)日：2020-03-24

申请号：US16123621

申请日：2018-09-06

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard John Hertel ,  Alex Kontos

IPC分类号： H01J37/00 ,  H01J37/305 ,  H01J37/08 ,  H01J37/147 ,  C23F4/00 ,  H01J37/32

摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

公开(公告)号：US20180122670A1

公开(公告)日：2018-05-03

申请号：US15340603

申请日：2016-11-01

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Ernest E. Allen ,  Richard John Hertel ,  Jay R. Wallace ,  Keith A. Miller

IPC分类号： H01L21/673 ,  H01L21/67

摘要： An apparatus may include a platen to hold a substrate. A substrate plane structure may be disposed in front of the platen. The substrate plane structure has an opening therein. The apparatus may further include a removable structure disposed in the opening of the substrate plane structure. The removable structure may have an opening exposing a surface of the platen.

公开(公告)号：US20170025252A1

公开(公告)日：2017-01-26

申请号：US14808612

申请日：2015-07-24

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Shurong Liang ,  Costel Biloiu ,  Glen Gilchrist ,  Vikram Singh ,  Christopher Campbell ,  Richard John Hertel ,  Alex Kontos

IPC分类号： H01J37/305 ,  H01J37/147 ,  C23F1/12 ,  H01J37/08

CPC分类号： H01J37/3053 ,  C23F4/00 ,  H01J37/08 ,  H01J37/1471

摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

摘要翻译： 在一个实施例中，用于处理衬底的设备可以包括提取板，以从等离子体室提取等离子体束并将等离子体束引导到衬底。 等离子体束可以包括相对于衬底的平面的垂直线形成非零入射角的离子; 以及设置在所述等离子体室外部的气体出口系统，所述气体出口系统耦合到气体源并被布置成将从所述气体源接收的反应气体输送到所述衬底，其中所述反应气体不通过所述等离子体室。