公开(公告)号：US20170053776A1

公开(公告)日：2017-02-23

申请号：US14831468

申请日：2015-08-20

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： W. Davis Lee ,  Neil Bassom ,  Anthony Renau

IPC分类号： H01J37/08 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J27/028 ,  H01J27/205 ,  H01J27/24 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/31701

摘要： An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive H2 gas; a light source directing radiation into the ion source chamber to generate excited H2 molecules having an excited vibrational state from at least some of the H2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H− ions are generated from at least some of the excited H2 molecules; and an extraction assembly arranged to extract the H− ions from the ion source chamber.

摘要翻译： 产生负氢离子的装置。 该装置可以包括具有用于接收H 2气体的气体入口的离子源室; 将辐射源引导到离子源室中以产生具有来自至少一些H 2气体的激发的振动状态的激发的H 2分子; 将低能电子引导到离子源室中的低能电子源，其中从至少一些被激发的H 2分子产生H离子; 以及提取组件，被布置成从离子源室提取H-离子。

公开(公告)号：US09773636B2

公开(公告)日：2017-09-26

申请号：US14831468

申请日：2015-08-20

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： W. Davis Lee ,  Neil Bassom ,  Anthony Renau

IPC分类号： H01J37/08 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J27/028 ,  H01J27/205 ,  H01J27/24 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/31701

摘要： An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive H2 gas; a light source directing radiation into the ion source chamber to generate excited H2 molecules having an excited vibrational state from at least some of the H2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H− ions are generated from at least some of the excited H2 molecules; and an extraction assembly arranged to extract the H− ions from the ion source chamber.

公开(公告)号：US20140326594A1

公开(公告)日：2014-11-06

申请号：US13886683

申请日：2013-05-03

申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

发明人： Costel Biloiu ,  David P. Sporleder ,  Jay Scheuer ,  Neil Bassom

IPC分类号： H01J37/30 ,  C23F4/00 ,  H01J37/305

CPC分类号： C23F4/00 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/022 ,  H01J2237/3341

摘要： An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.

摘要翻译： 离子源包括离子源室，设置在离子源室内的并且被配置为发射电子以产生电弧等离子体的阴极，以及构造成将电子排斥回到电弧等离子体中的反射器。 离子源室和阴极可以包括难熔金属。 离子源室还包括被配置为向离子源室提供卤素物质的气体源。 反应性插入物与卤素物质相互作用，以在离子源室内的难熔金属材料的小于第二蚀刻速率的第一组操作条件下产生耐热金属材料在离子源室内的第一蚀刻速率 当反应性插入物未设置在离子源室内时，在第一组操作条件下。

公开(公告)号：US08759788B1

公开(公告)日：2014-06-24

申请号：US13793447

申请日：2013-03-11

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Neil Bassom

IPC分类号： H01J27/00

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006

摘要： In one embodiment an ion source includes an arc chamber and an emitter having a surface disposed in the arc chamber, where the emitter is configured to generate a plasma in the arc chamber. The ion source further includes a repeller having a repeller surface positioned opposite the emitter surface, and a hollow cathode coupled to the repeller and configured to provide a feed material into the arc chamber.

摘要翻译： 在一个实施例中，离子源包括电弧室和具有设置在电弧室中的表面的发射器，其中发射极被配置为在电弧室中产生等离子体。 离子源还包括具有与发射体表面相对定位的反射器表面的推斥器，以及耦合到反射器并被配置成将馈电材料提供到电弧室中的空心阴极。

公开(公告)号：US09187832B2

公开(公告)日：2015-11-17

申请号：US13886683

申请日：2013-05-03

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Costel Biloiu ,  David P. Sporleder ,  Jay Scheuer ,  Neil Bassom

IPC分类号： H01J37/00 ,  C23F4/00 ,  H01J37/305 ,  H01J27/08 ,  H01J37/08

CPC分类号： C23F4/00 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/022 ,  H01J2237/3341

摘要： An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.

摘要翻译： 离子源包括离子源室，设置在离子源室内的并且被配置为发射电子以产生电弧等离子体的阴极，以及构造成将电子排斥回到电弧等离子体中的反射器。 离子源室和阴极可以包括难熔金属。 离子源室还包括被配置为向离子源室提供卤素物质的气体源。 反应性插入物与卤素物质相互作用，以在离子源室内的难熔金属材料的小于第二蚀刻速率的第一组操作条件下产生耐热金属材料在离子源室内的第一蚀刻速率 当反应性插入物未设置在离子源室内时，在第一组操作条件下。