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    MRAM FIELD DISTURB DETECTION AND RECOVERY
    1.
    发明申请
    MRAM FIELD DISTURB DETECTION AND RECOVERY 有权
    MRAM场干扰检测和恢复

    公开(公告)号：US20120311396A1

    公开(公告)日：2012-12-06

    申请号：US13484509

    申请日：2012-05-31

    申请人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

    发明人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/1048 ,  G11C29/44 ,  H03M13/11

    摘要： A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.

    摘要翻译： 提供一种方法和存储装置，用于从与多个存储器件位相关联的多个参考位的ECC字中读取数据，并确定是否存在ECC字中的双位错误。 ECC字可以首先切换两次，并且在检测到双位错误时参考位复位。

    METHOD FOR WRITING TO A MAGNETIC TUNNEL JUNCTION DEVICE
    3.
    发明申请
    METHOD FOR WRITING TO A MAGNETIC TUNNEL JUNCTION DEVICE 审中-公开
    用于写入磁性隧道连接装置的方法

    公开(公告)号：US20150109854A1

    公开(公告)日：2015-04-23

    申请号：US14580379

    申请日：2014-12-23

    申请人： Syed M. Alam ,  Thomas Andre

    发明人： Syed M. Alam ,  Thomas Andre

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673

    摘要： A method of applying a write current to a magnetic tunnel junction device minimizes sub-threshold leakage. NMOS- and PMOS-follower circuits are used in applying the write current, and bias signals for the follower circuits are isolated from global bias signals before the write current is applied.

    摘要翻译： 向磁性隧道结装置施加写入电流的方法使得亚阈值泄漏最小化。 NMOS和PMOS跟随器电路用于施加写入电流，并且在施加写入电流之前，跟随器电路的偏置信号与全局偏置信号隔离。

    Method of reading and writing to a spin torque magnetic random access memory with error correcting code
    6.
    发明授权
    Method of reading and writing to a spin torque magnetic random access memory with error correcting code 有权
    读取和写入具有纠错码的自旋转矩磁随机存取存储器的方法

    公开(公告)号：US09112536B2

    公开(公告)日：2015-08-18

    申请号：US13362805

    申请日：2012-01-31

    申请人： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft

    发明人： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft

    IPC分类号： H03M13/05 ,  G06F11/10 ,  H03M13/29

    CPC分类号： G06F11/1076 ,  G06F11/1012 ,  G06F11/1048 ,  G11C11/1673 ,  G11C11/1675 ,  H03M13/2906

    摘要： A method includes destructively reading bits of a spin torque magnetic random access memory, using error correcting code (ECC) for error correction, and storing inverted or non-inverted data in data-store latches. When a subsequent write operation changes the state of data-store latches, parity calculation and majority detection of the bits are initiated. A majority bit detection and potential inversion of write data minimizes the number of write current pulses. A subsequent write operation received within a specified time or before an original write operation is commenced will cause the majority detection operation to abort.

    摘要翻译： 一种方法包括使用用于纠错的纠错码（ECC）和将反相或非反相数据存储在数据存储锁存器中来自动读取自旋扭矩磁随机存取存储器的位。 当随后的写入操作改变数据存储锁存器的状态时，启动奇偶校验计算和多数位的检测。 写入数据的多数位检测和潜在反转使写入电流脉冲的数量最小化。 在指定时间内或原始写入操作开始之前接收到的后续写入操作将导致多数检测操作中止。

    Method of writing to a spin torque magnetic random access memory
    8.
    发明授权
    Method of writing to a spin torque magnetic random access memory 有权
    写入自旋转矩磁随机存取存储器的方法

    公开(公告)号：US08811071B2

    公开(公告)日：2014-08-19

    申请号：US13362599

    申请日：2012-01-31

    申请人： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

    发明人： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

    摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.

    摘要翻译： 一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。 采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。 在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。 在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。

    METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY
    9.
    发明申请
    METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY 有权
    写入旋转磁力随机存取存储器的方法

    公开(公告)号：US20120195112A1

    公开(公告)日：2012-08-02

    申请号：US13362599

    申请日：2012-01-31

    申请人： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

    发明人： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

    摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.

    摘要翻译： 一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。 采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。 在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。 在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。

    MEMORY DEVICE WITH PAGE EMULATION MODE
    10.
    发明申请
    MEMORY DEVICE WITH PAGE EMULATION MODE 有权
    具有页面模拟模式的存储器件

    公开(公告)号：US20150019806A1

    公开(公告)日：2015-01-15

    申请号：US14155816

    申请日：2014-01-15

    申请人： Syed M. Alam ,  Thomas Andre

    发明人： Syed M. Alam ,  Thomas Andre

    IPC分类号： G06F12/08

    CPC分类号： G06F11/1096 ,  G06F11/1064 ,  G06F12/0882 ,  G06F2211/109 ,  G06F2212/652 ,  G11C14/0036

    摘要： In some examples, a memory device is configured to load multiple pages of an internal page size into a cache in response to receiving an activate command and to write multiple pages of the internal page size into a memory array in response to receiving a precharge command. In some implementations, the memory array is arranged to store multiple pages of the internal page size in a single physical row.

    摘要翻译： 在一些示例中，存储器设备被配置为响应于接收到激活命令而将内部页面大小的页面加载到高速缓存中，并且响应于接收到预充电命令而将内部页面大小的多页写入存储器阵列。 在一些实现中，存储器阵列被布置成在单个物理行中存储内部页面大小的多个页面。