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    MRAM FIELD DISTURB DETECTION AND RECOVERY
    1.
    发明申请
    MRAM FIELD DISTURB DETECTION AND RECOVERY 有权
    MRAM场干扰检测和恢复

    公开(公告)号：US20120311396A1

    公开(公告)日：2012-12-06

    申请号：US13484509

    申请日：2012-05-31

    申请人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

    发明人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/1048 ,  G11C29/44 ,  H03M13/11

    摘要： A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.

    摘要翻译： 提供一种方法和存储装置，用于从与多个存储器件位相关联的多个参考位的ECC字中读取数据，并确定是否存在ECC字中的双位错误。 ECC字可以首先切换两次，并且在检测到双位错误时参考位复位。

    Low power magnetoresistive random access memory elements
    2.
    发明申请
    Low power magnetoresistive random access memory elements 有权

    公开(公告)号：US20070037299A1

    公开(公告)日：2007-02-15

    申请号：US11581951

    申请日：2006-10-16

    申请人： Nicholas Rizzo ,  Renu Dave ,  Bradley Engel ,  Jason Janesky ,  JiJun Sun

    发明人： Nicholas Rizzo ,  Renu Dave ,  Bradley Engel ,  Jason Janesky ,  JiJun Sun

    IPC分类号： H01L21/00

    CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/08

    摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

    Spin-transfer based MRAM using angular-dependent selectivity
    3.
    发明申请
    Spin-transfer based MRAM using angular-dependent selectivity 有权
    基于旋转转移的MRAM使用角度依赖选择性

    公开(公告)号：US20060087880A1

    公开(公告)日：2006-04-27

    申请号：US10971741

    申请日：2004-10-22

    申请人： Frederick Mancoff ,  Bradley Engel ,  Nicholas Rizzo

    发明人： Frederick Mancoff ,  Bradley Engel ,  Nicholas Rizzo

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.

    摘要翻译： 可以使用自旋转移反射模式技术来选择性地写入磁性随机存取存储器（“MRAM”）器件。 MRAM阵列内的指定MRAM单元的选择性通过自旋转移开关电流与偏振器元件的磁化与MRAM单元中的自由磁性元件之间的相对角度的相关性来实现。 偏振器元件具有可变响应于可应用电流例如数字线电流而改变的磁化强度。 当偏振器元件的磁化处于自然默认方向时，MRAM单元格中的数据将被保留。 当偏振器元件的磁化被切换时，可以响应于相对低的写入电流的应用来写入MRAM单元中的数据。

    Magnetoresistive random access memory with reduced switching field variation
    4.
    发明申请
    Magnetoresistive random access memory with reduced switching field variation 审中-公开
    具有减小的开关场变化的磁阻随机存取存储器

    公开(公告)号：US20060049441A1

    公开(公告)日：2006-03-09

    申请号：US11240179

    申请日：2005-09-29

    申请人： Jason Janesky ,  Bradley Engel ,  Jon Slaughter

    发明人： Jason Janesky ,  Bradley Engel ,  Jon Slaughter

    IPC分类号： H01L29/94

    CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/08

    摘要： An array of multi-state, multi-layer magnetic memory devices (10) wherein each memory device comprises a nonmagnetic spacer region (22) and a free magnetic region (24) positioned adjacent to a surface of the nonmagnetic spacer region, the free magnetic region including a plurality of magnetic layers (36,34,38), wherein the magnetic layer (36) in the plurality of magnetic layers positioned adjacent to the surface of the nonmagnetic spacer region has a thickness substantially greater than a thickness of each of the magnetic layers (34,38) subsequently grown thereon wherein the thickness is chosen to improve the magnetic switching variation so that the magnetic switching field for each memory device in the array of memory devices is more uniform.

    摘要翻译： 一种多状态多层磁存储器件阵列，其中每个存储器件包括非磁性间隔区域（22）和邻近非磁性间隔区域表面定位的自由磁区域（24），所述自由磁性区域 区域，其包括多个磁性层（36,34,38），其中位于所述非磁性间隔区域的表面附近的所述多个磁性层中的所述磁性层（36）的厚度基本上大于所述非磁性间隔区域的厚度 随后在其上生长的磁性层（34,38），其中选择厚度以改善磁切换变化，使得存储器件阵列中的每个存储器件的磁切换场更均匀。

    Apparatus and method for sequentially resetting elements of a magnetic sensor array
    7.
    发明授权
    Apparatus and method for sequentially resetting elements of a magnetic sensor array 有权
    用于顺序复位磁传感器阵列的元件的装置和方法

    公开(公告)号：US08901924B2

    公开(公告)日：2014-12-02

    申请号：US13031558

    申请日：2011-02-21

    申请人： Bradley Engel ,  Phillip Mather

    发明人： Bradley Engel ,  Phillip Mather

    IPC分类号： G01R33/02 ,  G01R33/09 ,  B82Y25/00

    CPC分类号： G01R33/098 ,  B82Y25/00 ,  G01R33/0023 ,  G01R33/09 ,  G01R33/093

    摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

    摘要翻译： 半导体工艺和设备提供具有三个差分传感器配置的高性能磁场传感器，其仅需要两个不同的钉扎轴，其中每个差分传感器由具有四个非屏蔽磁隧道结传感器阵列的惠斯登电桥结构形成，每个包括 磁场脉冲发生器，用于选择性地施加场脉冲以稳定或恢复感测层的易轴磁化，以在小磁场测量之前以正确的配置定向磁化。 场脉冲顺序地施加到惠斯登电桥结构的感测层的组，从而允许更高的电流脉冲或更大的传感器阵列尺寸以获得最大的信噪比。

    Oscillator and method of manufacture
    8.
    发明申请
    Oscillator and method of manufacture 有权
    振荡器和制造方法

    公开(公告)号：US20070236105A1

    公开(公告)日：2007-10-11

    申请号：US11225973

    申请日：2005-09-13

    申请人： Frederick Mancoff ,  Bradley Engel ,  Nicholas Rizzo

    发明人： Frederick Mancoff ,  Bradley Engel ,  Nicholas Rizzo

    IPC分类号： H01L41/00

    CPC分类号： H01L43/08 ,  H03B15/006

    摘要： An oscillator includes at least one of: (i) a parallel array of resistors (420, 421, 422, 701, 801, 901, 902) or magnetoresistive contacts to a magnetoresistive film (120, 320); and (ii) a series array of resistors (620, 621, 702, 902) or magnetoresistive contacts to individualized areas of at least one magnetoresistive film.

    摘要翻译： 振荡器包括以下至少一个：（i）电阻器（420,421,422,701,801,901,902）的并联阵列或磁阻膜（120,320）的磁阻触点; 和（ii）至少一个磁阻膜的个体化区域的一系列电阻器（620,621,702,902）或磁阻触点。

    Reduced power magnetoresistive random access memory elements
    9.
    发明申请
    Reduced power magnetoresistive random access memory elements 有权

    公开(公告)号：US20060108620A1

    公开(公告)日：2006-05-25

    申请号：US10997118

    申请日：2004-11-24

    申请人： Nicholas Rizzo ,  Renu Dave ,  Bradley Engel ,  Jason Janesky ,  JiJun Sun

    发明人： Nicholas Rizzo ,  Renu Dave ,  Bradley Engel ,  Jason Janesky ,  JiJun Sun

    IPC分类号： H01L29/94

    CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/08

    摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.