公开(公告)号：US11642636B2

公开(公告)日：2023-05-09

申请号：US16216299

申请日：2018-12-11

Applicant: The University of Tokyo ,  Nikon Corporation

Inventor： Takanori Ichiki ,  Taro Ueno ,  Shoichi Tsuchiya ,  Masashi Kobayashi ,  Kenji Miyamoto

IPC: B01F25/54 ,  B01F23/451 ,  B01F25/51 ,  B01F33/30 ,  B01F35/75 ,  G01N1/38 ,  G01N35/00 ,  B01L3/00

CPC classification number: B01F25/54 ,  B01F23/451 ,  B01F25/51 ,  B01F33/30 ,  B01F35/7547 ,  B01L3/5027 ,  B01L2300/0867 ,  G01N2001/386 ,  G01N2035/00158

Abstract: A solution mixer comprising: a main flow path in which a solution circulates; at least one solution introduction flow path connected to the main flow path; and at least one solution discharge flow path connected to the main flow path, wherein the solution discharge flow path has at least one solution discharge flow path valve, and wherein the main flow path has at least one main flow path valve.

公开(公告)号：US10301682B2

公开(公告)日：2019-05-28

申请号：US15080266

申请日：2016-03-24

Applicant: The University of Tokyo ,  Nikon Corporation

Inventor： Takanori Ichiki ,  Masashi Kobayashi ,  Ayako Hayashi ,  Shoichi Tsuchiya ,  Takanori Akagi ,  Taro Ueno ,  Takashi Funatsu ,  Kenji Miyamoto

IPC: C12Q1/6886 ,  G01N33/53 ,  B01L3/00 ,  C12Q1/6806

Abstract: The present invention provides a fluidic device, an exosome analysis method, a biomolecule analysis method, and a biomolecule detection method, which can analyze even the content of an exosome in a series of flows by introducing a sample into the device. A fluidic device of the present invention is a fluidic device which detects a biomolecule contained in an exosome in a sample, and includes: an exosome purification unit which has a layer modified with a compound having a hydrophobic chain and a hydrophilic chain; a biomolecule purification unit; a biomolecule detection unit; a first flow path which connects the exosome purification unit to the biomolecule purification unit; and a second flow path which connects the biomolecule purification unit to the biomolecule detection unit.

公开(公告)号：US20180351105A1

公开(公告)日：2018-12-06

申请号：US16103593

申请日：2018-08-14

Applicant: NIKON CORPORATION

Inventor： Shohei KOIZUMI ,  Takashi Sugizaki ,  Kenji Miyamoto ,  Yusuke Kawakami

IPC: H01L51/00 ,  B32B27/16 ,  C09D163/00 ,  C09D5/24 ,  C08G59/32 ,  C08G59/40 ,  C08G59/66 ,  C08G59/24 ,  H01L51/05 ,  H01L51/10

CPC classification number: H01L51/0035 ,  B32B27/16 ,  B32B2307/202 ,  B32B2307/206 ,  C07D303/27 ,  C08G18/6237 ,  C08G18/68 ,  C08G59/02 ,  C08G59/245 ,  C08G59/32 ,  C08G59/3218 ,  C08G59/3245 ,  C08G59/4064 ,  C08G59/66 ,  C08G59/68 ,  C08L63/00 ,  C09D5/24 ,  C09D163/00 ,  C09D175/14 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/311 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0038 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/105 ,  Y10T428/31511 ,  C08L25/18

Abstract: Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

公开(公告)号：US20140183506A1

公开(公告)日：2014-07-03

申请号：US14178651

申请日：2014-02-12

Applicant: NIKON CORPORATION

Inventor： Shohei Koizumi ,  Takashi Sugizaki ,  Kenji Miyamoto

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0021 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

Abstract: A method for manufacturing a transistor includes: forming a base film for supporting a catalyst for electroless plating; forming a resist layer having an opening portion corresponding to source and drain electrodes onto the base film; causing the base film within the opening portion to support the catalyst for electroless plating and performing a first electroless plating; removing the resist layer; performing a second electroless plating on a surface of an electrode which is formed by the first electroless plating and forming the source and drain electrodes; and forming a semiconductor layer in contact with surfaces of the source and drain electrodes, the surfaces facing each other, wherein an energy level difference between a work function of a material which is used for the second electroless plating and an energy level of a molecular orbital which is used for electron transfer in a material of the semiconductor layer is less than an energy level difference between a work function of a material which is used for the first electroless plating and the energy level of the molecular orbital.

Abstract translation: 一种制造晶体管的方法，包括：形成用于支撑化学镀的催化剂的基膜; 在所述基膜上形成具有对应于源电极和漏电极的开口部分的抗蚀剂层; 使所述开口部内的基膜支承无电镀用催化剂，进行第一无电镀; 去除抗蚀剂层; 在由所述第一无电镀形成的电极的表面上进行第二无电镀，形成所述源极和漏极; 以及形成与所述源极和漏极的表面接触的半导体层，所述表面彼此面对，其中用于所述第二无电镀的材料的功函数与分子轨道的能级之间的能级差 用于半导体层的材料中的电子转移的电子量小于用于第一化学镀的材料的功函数与分子轨道的能级之间的能级差。

公开(公告)号：US10510460B2

公开(公告)日：2019-12-17

申请号：US15599078

申请日：2017-05-18

Applicant: NIKON CORPORATION

Inventor： Shohei Koizumi ,  Takashi Sugizaki ,  Kenji Miyamoto ,  Yusuke Kawakami

IPC: H01B3/46 ,  H01L51/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/038 ,  G03F7/075 ,  G03F7/40 ,  C08L63/00 ,  H01L51/05 ,  H01L21/02 ,  C08G59/32 ,  C08G59/62 ,  C08G59/68

Abstract: A method of manufacturing a laminate, transistor, and method of manufacturing transistor using a composition that includes an organic compound having a hydroxy group; a first cross-linking agent that is at least one organic silicon compound selected from the group including an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, a cyclic organic silicon compound including D unit in the molecule and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and a cyclic organic silicon compound including a T unit in the molecule and having two or more cyclic ether groups in the molecule; and a photocationic polymerization initiator.

公开(公告)号：US20170229653A1

公开(公告)日：2017-08-10

申请号：US15495360

申请日：2017-04-24

Applicant: NIKON CORPORATION

Inventor： Shohei KOIZUMI ,  Takashi Sugizaki ,  Kenji Miyamoto ,  Yusuke Kawakami

IPC: H01L51/00 ,  H01L51/10 ,  C08G59/24 ,  B32B27/16 ,  C08G59/66 ,  C08G59/40 ,  C09D5/24 ,  C09D163/00 ,  H01L51/05 ,  C08G59/32

CPC classification number: H01L51/0038 ,  B32B27/16 ,  C07D303/27 ,  C08G18/6237 ,  C08G18/68 ,  C08G59/02 ,  C08G59/32 ,  C08G59/3218 ,  C08G59/68 ,  C08L63/00 ,  C09D5/24 ,  C09D175/14 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/311 ,  H01L51/0021 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/105 ,  Y10T428/31511 ,  C08L25/18

Abstract: Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

公开(公告)号：US10677791B2

公开(公告)日：2020-06-09

申请号：US15386224

申请日：2016-12-21

Applicant: NIKON CORPORATION

Inventor： Kenji Miyamoto ,  Masaru Kato

IPC: B01L3/00 ,  G01N33/543 ,  F16K99/00

Abstract: A fluidic device includes a valve configured to adjust a fluid flow in a first direction of a flow path. The fluidic device includes: a diaphragm of the valve; a first substrate having a groove that constitutes the flow path and a protrusion part at a position facing the diaphragm in the groove; and a second substrate to which the diaphragm is fixed at a first fixation part and a second fixation part, wherein a length from a first end part of the protrusion part to a second end part of the protrusion part seen in the first direction is greater than a length from the first fixation part to the second fixation part.

公开(公告)号：US10476005B2

公开(公告)日：2019-11-12

申请号：US16103593

申请日：2018-08-14

Applicant: NIKON CORPORATION

Inventor： Shohei Koizumi ,  Takashi Sugizaki ,  Kenji Miyamoto ,  Yusuke Kawakami

IPC: C08F2/46 ,  C08F2/50 ,  C08G61/04 ,  H01L51/00 ,  B32B27/16 ,  C07D303/27 ,  C08G59/68 ,  C09D163/00 ,  C09D5/24 ,  C08G18/62 ,  C08G18/68 ,  C09D175/14 ,  H01L21/02 ,  H01L21/311 ,  H01L51/05 ,  C08G59/02 ,  H01L51/10 ,  G03F7/038 ,  C08G59/24 ,  C08G59/32 ,  C08G59/40 ,  C08G59/66 ,  C08L63/00

Abstract: Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

公开(公告)号：US10074803B2

公开(公告)日：2018-09-11

申请号：US15495360

申请日：2017-04-24

Applicant: NIKON CORPORATION

Inventor： Shohei Koizumi ,  Takashi Sugizaki ,  Kenji Miyamoto ,  Yusuke Kawakami

IPC: C08F2/46 ,  C08G61/04 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  C08G59/24 ,  C08G59/32 ,  C08G59/66 ,  C08G59/40 ,  C09D5/24 ,  C09D163/00 ,  B32B27/16

CPC classification number: H01L51/0035 ,  B32B27/16 ,  B32B2307/202 ,  B32B2307/206 ,  C07D303/27 ,  C08G18/6237 ,  C08G18/68 ,  C08G59/02 ,  C08G59/245 ,  C08G59/32 ,  C08G59/3218 ,  C08G59/3245 ,  C08G59/4064 ,  C08G59/66 ,  C08G59/68 ,  C08L63/00 ,  C09D5/24 ,  C09D163/00 ,  C09D175/14 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/311 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0038 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/105 ,  Y10T428/31511 ,  C08L25/18

Abstract: Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

公开(公告)号：US09401478B2

公开(公告)日：2016-07-26

申请号：US14178651

申请日：2014-02-12

Applicant: NIKON CORPORATION

Inventor： Shohei Koizumi ,  Takashi Sugizaki ,  Kenji Miyamoto

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05

CPC classification number: H01L51/0021 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

Abstract: A method for manufacturing a transistor includes: forming a base film for supporting a catalyst for electroless plating; forming a resist layer having an opening portion corresponding to source and drain electrodes onto the base film; causing the base film within the opening portion to support the catalyst for electroless plating and performing a first electroless plating; removing the resist layer; performing a second electroless plating on a surface of an electrode which is formed by the first electroless plating and forming the source and drain electrodes; and forming a semiconductor layer in contact with surfaces of the source and drain electrodes, the surfaces facing each other, wherein an energy level difference between a work function of a material which is used for the second electroless plating and an energy level of a molecular orbital which is used for electron transfer in a material of the semiconductor layer is less than an energy level difference between a work function of a material which is used for the first electroless plating and the energy level of the molecular orbital.

Abstract translation: 一种制造晶体管的方法，包括：形成用于支撑化学镀的催化剂的基膜; 在所述基膜上形成具有对应于源电极和漏电极的开口部分的抗蚀剂层; 使所述开口部内的基膜支承无电镀用催化剂，进行第一无电镀; 去除抗蚀剂层; 在由所述第一无电镀形成的电极的表面上进行第二无电镀，形成所述源极和漏极; 以及形成与所述源极和漏极的表面接触的半导体层，所述表面彼此面对，其中用于所述第二无电镀的材料的功函数与分子轨道的能级之间的能级差 用于半导体层的材料中的电子转移的电子量小于用于第一化学镀的材料的功函数与分子轨道的能级之间的能级差。