公开(公告)号：US5529951A

公开(公告)日：1996-06-25

申请号：US332758

申请日：1994-11-01

申请人： Takashi Noguchi ,  Tohru Ogawa ,  Yuji Ikeda

发明人： Takashi Noguchi ,  Tohru Ogawa ,  Yuji Ikeda

IPC分类号： B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/42 ,  C23C16/24 ,  C23C16/56 ,  H01L21/20 ,  H01L21/223 ,  H01L21/268 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： B23K26/0608 ,  B23K26/032 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/702 ,  B23K26/705 ,  C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  H01L21/223 ,  H01L21/268 ,  H01L21/3185 ,  H01L21/324 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S117/904 ,  Y10S148/09 ,  Y10S148/093

摘要： A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.

摘要翻译： 通过使用这种多晶硅薄膜，形成提高结晶度的多晶硅薄膜的方法和电特性优异的晶体管的沟道。 在基板上形成厚度优选为30nm〜50nm的非晶硅层。 接下来，进行基板加热以将非晶硅层设定为350℃至500℃，更优选350℃至450℃。然后，至少对非晶硅层照射激光 准分子激光能量密度为100mJ / cm 2至500mJ / cm 2，优选为280mJ / cm 3至330mJ / cm 2，脉冲宽度为80ns至200ns，优选为140ns至200ns，以便直接退火 非晶硅层，形成多晶硅薄膜。 用于照射准分子激光的激光的总能量为至少5J，优选为至少10J。

公开(公告)号：US6071765A

公开(公告)日：2000-06-06

申请号：US915269

申请日：1997-08-20

申请人： Takashi Noguchi ,  Tohru Ogawa ,  Yuji Ikeda

发明人： Takashi Noguchi ,  Tohru Ogawa ,  Yuji Ikeda

IPC分类号： B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/42 ,  C23C16/24 ,  C23C16/56 ,  H01L21/20 ,  H01L21/223 ,  H01L21/268 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/032 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/702 ,  B23K26/705 ,  C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  H01L21/223 ,  H01L21/268 ,  H01L21/3185 ,  H01L21/324 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S117/904 ,  Y10S148/09 ,  Y10S148/093

摘要： A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.

摘要翻译： 通过使用这种多晶硅薄膜，形成提高结晶度的多晶硅薄膜的方法和电特性优异的晶体管的沟道。 在基板上形成厚度优选为30nm〜50nm的非晶硅层。 接下来，进行基板加热以将非晶硅层设定为350℃至500℃，更优选350℃至450℃。然后，至少对非晶硅层照射激光 准分子激光能量密度为100mJ / cm 2至500mJ / cm 2，优选为280mJ / cm 3至330mJ / cm 2，脉冲宽度为80ns至200ns，优选为140ns至200ns，以便直接退火 非晶硅层，形成多晶硅薄膜。 用于照射准分子激光的激光的总能量为至少5J，优选为至少10J。

公开(公告)号：US5869803A

公开(公告)日：1999-02-09

申请号：US463962

申请日：1995-06-05

申请人： Takashi Noguchi ,  Tohru Ogawa ,  Yuji Ikeda

发明人： Takashi Noguchi ,  Tohru Ogawa ,  Yuji Ikeda

IPC分类号： B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/42 ,  C23C16/24 ,  C23C16/56 ,  H01L21/20 ,  H01L21/223 ,  H01L21/268 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786 ,  B23K26/12

CPC分类号： B23K26/0608 ,  B23K26/032 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/702 ,  B23K26/705 ,  C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  H01L21/223 ,  H01L21/268 ,  H01L21/3185 ,  H01L21/324 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S117/904 ,  Y10S148/09 ,  Y10S148/093

摘要： A method of forming a polycrystalline silicon thin film includes irradiating an amorphous silicon layer with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J. The laser device includes an homogenizer movably mounted at the end of the optical path of the laser beam.

摘要翻译： 形成多晶硅薄膜的方法包括用准分子激光能量密度为100mJ / cm 2至500mJ / cm 2，优选280mJ / cm 2至330mJ / cm 2的激光照射非晶硅层，脉冲宽度 80ns至200ns，优选140ns至200ns，以便直接退火非晶硅层并形成多晶硅薄膜。 用于照射准分子激光的激光的总能量为至少5J，优选为至少10J。激光装置包括可移动地安装在激光束的光路端部的均质器。

公开(公告)号：US06172380B2

公开(公告)日：2001-01-09

申请号：US09187224

申请日：1998-11-06

申请人： Takashi Noguchi ,  Yuji Ikeda

发明人： Takashi Noguchi ,  Yuji Ikeda

IPC分类号： H01L2904

CPC分类号： H01L29/1602 ,  H01L29/045 ,  H01L29/16

摘要： A semiconductor material having more excellent electric characteristics than polycrystalline semiconductor materials and readily formed on various kinds of substrates is provided. The semiconductor material is made of substantially single crystalline semiconductor crystal grains 3a. These crystal grains 3a are preferentially oriented in a common surface orientation, such as {100}, {111} or {110}-orientation, and grain boundaries 3b of adjacent ones of the crystal grains 3a are in substantial lattice matching with each other at least in a part thereof. In case of {100} orientation, each crystal grain 3a has an approximately square shape, and they are regularly aligned in rows and columns. In case of {111} orientation, each crystal grain 3a has an approximately equilateral hexagonal shape, and they are aligned in an equilateral turtle shell pattern. In case of {110} orientation, each crystal grain 3a has an approximately hexagonal shape, and they are aligned in a turtle shell pattern. The semiconductor forming the crystal grains 3a is a group IV semiconductor having a diamond-type crystal structure, such as Si, Ge and C.

摘要翻译： 提供了具有比多晶半导体材料更优异的电特性并容易形成在各种基板上的半导体材料。 半导体材料由基本上单晶半导体晶粒3a制成。 这些晶粒3a优选以公共的表面取向取向，例如{100}，{111}或{110}取向，相邻的晶粒3a的晶界3b彼此实质上晶格匹配 至少在一部分。 在{100}取向的情况下，每个晶粒3a具有近似正方形的形状，并且它们被规则地排列成行和列。 在{111}取向的情况下，每个晶粒3a具有大致等边六边形，并且它们以等边龟壳图案对准。 在{110}取向的情况下，每个晶粒3a具有大致六边形形状，并且以乌龟壳图案对准。 形成晶粒3a的半导体是具有诸如Si，Ge和C的金刚石型晶体结构的IV族半导体。

公开(公告)号：US06548830B1

公开(公告)日：2003-04-15

申请号：US09616685

申请日：2000-07-14

申请人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

发明人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/28273 ,  H01L29/66765 ,  H01L29/78678 ,  Y10T428/24372

摘要： A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.

摘要翻译： 一种半导体器件，包括源极/漏极区域和形成在由硅单晶颗粒组成的硅薄膜中的沟槽区域，所述硅单晶晶体每个近似矩形并且以基板上的网格图案布置，其中 硅单晶晶粒的基体的表面的选择取向大致为<100>方向。

公开(公告)号：US06190949B1

公开(公告)日：2001-02-20

申请号：US08861197

申请日：1997-05-21

申请人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

发明人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/28273 ,  H01L29/66765 ,  H01L29/78678 ,  Y10T428/24372

摘要： A process of forming a silicon thin film includes the steps of: irradiating a pulsed rectangular ultraviolet beam on an amorphous or polycrystalline silicon layer formed on a base body, to thereby form a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body. In this process, the moved amount of a ultraviolet beam irradiating position in a period from completion of an irradiation of the rectangular ultraviolet beam to starting of the next irradiation of the rectangular ultraviolet beam is specified at 40 &mgr;m or less, and a ratio of the moved amount to a width of the rectangular ultraviolet beam measured in the movement direction thereof is in a range of 0.1 to 5%. Further, a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.

摘要翻译： 形成硅薄膜的方法包括以下步骤：在形成在基体上的非晶或多晶硅层上照射脉冲的矩形紫外线，从而形成由一组硅单晶粒构成的硅薄膜， 每个大致矩形，并且在基体上以网格图案排列。 在该处理中，在从矩形紫外线的照射完成到矩形紫外线的下一次照射开始的期间内的紫外线照射位置的移动量规定为40μm以下， 在其移动方向上测量的矩形紫外线的宽度的移动量在0.1〜5％的范围内。 此外，硅单晶粒到基体表面的选定取向大约为<100>方向。

公开(公告)号：US10571841B2

公开(公告)日：2020-02-25

申请号：US15854293

申请日：2017-12-26

申请人： Hayato Fujita ,  Keita Maejima ,  Hiroshi Okamura ,  Masaki Tsugawa ,  Yuji Ikeda ,  Yohei Kushida ,  Emiko Kawarasaki

发明人： Hayato Fujita ,  Keita Maejima ,  Hiroshi Okamura ,  Masaki Tsugawa ,  Yuji Ikeda ,  Yohei Kushida ,  Emiko Kawarasaki

IPC分类号： G03G15/00 ,  B65H7/02

摘要： A thickness detector includes a rotator having different shape marks, disposed at different positions in a rotation direction; an opposing member disposed opposite the rotator; a detector to detect and output a displacement amount of the rotator or the opposing member in a sheet thickness direction; and a controller. The controller is configured to acquire first output values for one rotation from the detector, in a state without sheet; determine, based on a value output from the detector, whether one of the plurality of marks is detected in a state with the sheet held; acquire a predetermined number of second output values after one of the marks is detected; extract, from the first output values, values corresponding to the second output values, based on the value corresponding to the detected mark; and calculate a sheet thickness based on the second output values and the extracted first output values.

公开(公告)号：US09627858B2

公开(公告)日：2017-04-18

申请号：US13499049

申请日：2010-09-30

申请人： Yuji Ikeda

发明人： Yuji Ikeda

IPC分类号： G01N21/00 ,  H01T13/48 ,  G01J3/02 ,  G01J3/36 ,  G01J5/00 ,  G01N21/67 ,  F02P13/00 ,  G01J5/60 ,  F02P17/00

CPC分类号： H01T13/48 ,  F02P13/00 ,  F02P17/00 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/36 ,  G01J5/0018 ,  G01J5/602 ,  G01N21/67

摘要： An observation plug 102 includes a spark plug body 50, an objective optical system 10, and a set of light conduction paths 16. The spark plug body 50 ignites gas in a combustion chamber by an electric discharge in a discharge gap 60, and has an observation hole 4 penetrating in an axial direction at a location dislocated from the discharge gap 60. The objective optical system 10, which is provided in the observation hole 4 to be exposed into the combustion chamber, bends a course of light received from an incident surface 10a facing toward the discharge gap included in an observation area, and forms an image of the observation area within the observation hole 4. The set of light conduction paths 16 is provided in the observation hole 4, and divides the image of the observation area into a plurality of portions to be transmitted therethrough.

公开(公告)号：US09534558B2

公开(公告)日：2017-01-03

申请号：US13982452

申请日：2012-01-10

申请人： Yuji Ikeda ,  Shigeo Nomura ,  Yoshiaki Nishijima

发明人： Yuji Ikeda ,  Shigeo Nomura ,  Yoshiaki Nishijima

IPC分类号： F02D43/04 ,  F02D41/40 ,  F02P3/01 ,  F02P23/04 ,  F02D35/02 ,  F02D41/30 ,  F02P5/153 ,  F02P9/00 ,  F02B23/10 ,  F02B23/08

CPC分类号： F02D43/04 ,  F02B23/101 ,  F02B2023/085 ,  F02D35/023 ,  F02D35/028 ,  F02D41/3041 ,  F02D41/403 ,  F02D2200/1002 ,  F02D2200/101 ,  F02P3/01 ,  F02P5/153 ,  F02P9/007 ,  F02P15/02 ,  F02P23/045 ,  Y02T10/44

摘要： In a compression ignition internal combustion engine 20that generates electromagnetic wave plasma by emitting electromagnetic waves to a combustion chamber 21 during a period of a preceding injection, a control device 10 for internal combustion engine controls a fuel injection device 24 to perform, before a main injection, a preceding injection less in injection quantity than the main injection, while controlling a plasma generation device 30 to generate electromagnetic plasma by emitting electromagnetic waves to the combustion chamber 21 during the period of the preceding injection. The control device 10 controls a condition of heat production due to combustion of fuel from the main injection by controlling the amount of energy of the electromagnetic waves emitted to the combustion chamber 21 during the period of the preceding injection according to the operating condition of the internal combustion engine main body 22.

摘要翻译： 在压缩点火式内燃机20中，通过在前一次喷射期间向燃烧室21发射电磁波而产生电磁波等离子体，内燃机用控制装置10控制燃料喷射装置24，在主喷射 ，其中喷射量比主喷射少的喷射次数在控制等离子体产生装置30的同时通过在前一喷射期间向燃烧室21发射电磁波来产生电磁等离子体。 控制装置10通过控制在前一次喷射期间发射到燃烧室21的电磁波的能量根据内部的运行状态来控制由于来自主喷射的燃料的燃烧引起的热产生的状况 内燃机主体22。

公开(公告)号：US09499363B2

公开(公告)日：2016-11-22

申请号：US14587104

申请日：2014-12-31

申请人： Yuu Wakabayashi ,  Ryo Takenaka ,  Masashi Satoh ,  Shingo Nishizaki ,  Yusuke Ozaki ,  Yuji Ikeda ,  Hiroshi Okamura ,  Naohiro Funada ,  Tomohide Kondoh

发明人： Yuu Wakabayashi ,  Ryo Takenaka ,  Masashi Satoh ,  Shingo Nishizaki ,  Yusuke Ozaki ,  Yuji Ikeda ,  Hiroshi Okamura ,  Naohiro Funada ,  Tomohide Kondoh

IPC分类号： B65H5/02 ,  B65H5/04 ,  B65H5/06 ,  B65H7/14 ,  B65H7/12 ,  G03G15/00 ,  B65H7/20

CPC分类号： B65H5/068 ,  B65H7/12 ,  B65H7/14 ,  B65H7/20 ,  B65H2404/144 ,  G03G15/5029 ,  G03G2215/00628 ,  G03G2215/00738

摘要： A sheet thickness detector incorporated in an image forming apparatus includes a sheet conveying member to rotate and convey a sheet in a sheet conveyance direction, a driven sheet conveying member to contact the sheet conveying member and form at least one first transfer nip therebetween in a lateral direction and to displace by an amount equivalent to a thickness of the sheet passing through the first transfer nip and rotated with the sheet conveying member in the sheet conveyance direction, a displacement member to contact the sheet conveying member and form a second transfer nip smaller than the first transfer nip in the lateral direction and to displace by an amount equivalent to the thickness of the sheet passing through the second transfer nip and supported at a support member, and a displacement amount detector to detect an amount of displacement of the displacement member.