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    Pattern formation method and method and apparatus for production of a semiconductor device using said method
    2.
    发明授权
    Pattern formation method and method and apparatus for production of a semiconductor device using said method 失效
    用于使用所述方法制造半导体器件的图案形成方法和方法和装置

    公开(公告)号：US06673526B1

    公开(公告)日：2004-01-06

    申请号：US08518363

    申请日：1995-08-23

    申请人： Tohru Ogawa ,  Masaya Uematsu

    发明人： Tohru Ogawa ,  Masaya Uematsu

    IPC分类号： G03B2754

    CPC分类号： G03F7/70125 ,  G03F7/70283

    摘要： A pattern formation method and method and apparatus for production of a semiconductor device using that method which irradiate light from a light source to a phase shifting mask through a fly's-eye lens comprised of an assembly of a plurality of lenses, transfer the pattern of the phase shifting mask onto the substrate, and form the pattern on the substrate, wherein the amount of light made incident upon the center portion of the fly's-eye lens is lowered by 2 to 90 percent, preferably 10 to 90 percent, further preferably 20 to 80 percent or 20 to 60 percent, relative to the amount of light incident upon the peripheral portion of the fly's-eye lens.

    摘要翻译： 一种用于制造半导体器件的图案形成方法和方法，该半导体器件使用通过由多个透镜的组件构成的蝇眼透镜将来自光源的光照射到相移掩模的方法， 相移掩模到基板上，并且在基板上形成图案，其中入射在飞眼镜片的中心部分上的光量降低了2％到90％，优选地是10％到90％，进一步优选地是20到 80％或20％至60％，相对于入射到飞眼镜片的周边部分的光量。

    Anti-reflective layer used to form a semiconductor device
    3.
    发明授权
    Anti-reflective layer used to form a semiconductor device 失效
    用于形成半导体器件的抗反射层

    公开(公告)号：US5641607A

    公开(公告)日：1997-06-24

    申请号：US535377

    申请日：1995-09-28

    申请人： Tohru Ogawa ,  Tetsuo Gocho

    发明人： Tohru Ogawa ,  Tetsuo Gocho

    IPC分类号： G03F7/09 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/768 ,  G03C1/825

    CPC分类号： G03F7/091 ,  G03F7/70691 ,  H01L21/02071 ,  H01L21/0275 ,  H01L21/0276 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76838 ,  Y10S430/151

    摘要： A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

    摘要翻译： 通过用单色光曝光形成抗蚀剂图案来确定抗反射层的最佳条件的方法，在这些条件下形成抗反射层，并使用新的抗反射层形成抗蚀剂图案。 该方法包括：（I）使用抗反射层的光学条件作为参数，形成关于可选膜厚度的光致抗蚀剂的吸收光量的等轮线，（II）进行与（ 对于多个抗蚀剂膜厚度，（III）找到相对于所获得的每个迹线的吸收光量的公共区域，从而确定抗反射层的光学条件，（IV）施加相同的光刻条件 改变抗反射层的状态，从而确定抗反射层的光学条件，和（V）确定最佳光学条件，例如抗反射层的种类和厚度， 防反射层的一定条件。

    Semiconductor light exposure device
    5.
    发明授权
    Semiconductor light exposure device 失效
    半导体曝光装置

    公开(公告)号：US5473409A

    公开(公告)日：1995-12-05

    申请号：US309874

    申请日：1994-09-20

    申请人： Minoru Takeda ,  Shigeo Kubota ,  Michio Oka ,  Tohru Ogawa

    发明人： Minoru Takeda ,  Shigeo Kubota ,  Michio Oka ,  Tohru Ogawa

    IPC分类号： G03F7/20 ,  G03B27/42

    CPC分类号： G03F7/70575

    摘要： An exposure device in which a reticle having a circuit pattern of a semiconductor device formed on it is irradiated with light beam emanated from a light source, such as a laser light source, for exposing the circuit pattern formed on the reticle on a semiconductor wafer. The exposure device includes a light beam generator for illuminating the reticle having a semiconductor circuit pattern formed on it, an image-forming optical system for forming an image on a wafer of a light image produced on radiating a light beam on the reticle from the light beam generator. The exposure device also includes a movement unit for moving the wafer relative to the image-forming optical system, and an alignment unit for detecting the position on the wafer of the image formed on the wafer by the image-forming optical system for position matching the image by the image-forming optical system relative to the wafer. The light beam generator includes a light source for excitation, a first resonator and a second resonator. The first resonator is illuminated by the light beam from the light source for excitation and outputs the light beam from the light source for excitation after waveform conversion. The second resonator is illuminated by the light beam from the first resonator and outputs the light beam from the first resonator after waveform conversion.

    摘要翻译： 照射具有形成在其上的半导体器件的电路图形的掩模版的曝光装置，用于从诸如激光源的光源发射的光束照射用于使形成在半导体晶片上的掩模版上的电路图案曝光。 曝光装置包括用于照亮其上形成有半导体电路图案的掩模版的光束发生器，用于在光线上形成光图像的图像的图像形成光学系统，该光图像在光线上从光线照射光线 光束发生器。 曝光装置还包括用于相对于图像形成光学系统移动晶片的移动单元和用于通过图像形成光学系统检测在晶片上形成的图像在晶片上的位置的对准单元，用于位置匹配 通过图像形成光学系统相对于晶片的图像。 光束发生器包括用于激发的光源，第一谐振器和第二谐振器。 第一谐振器由来自光源的光束照射用于激发，并且在波形转换之后输出来自光源的光束用于激发。 第二谐振器由来自第一谐振器的光束照射，并且在波形转换之后从第一谐振器输出光束。

    Data transmission system having a backup testing facility
    9.
    发明授权
    Data transmission system having a backup testing facility 失效
    具有备份测试设备的数据传输系统

    公开(公告)号：US5689513A

    公开(公告)日：1997-11-18

    申请号：US624055

    申请日：1996-03-29

    申请人： Ryoji Okita ,  Tohru Ogawa ,  Michiko Kawada

    发明人： Ryoji Okita ,  Tohru Ogawa ,  Michiko Kawada

    IPC分类号： H04B1/74 ,  H04L1/22 ,  H04L29/14 ,  H04Q11/04 ,  G06F11/00

    CPC分类号： H04Q11/0457

    摘要： A data transmission system having, in addition to a normal system operation mode, a test mode wherein a plurality of stations confirm each other through sending and receiving check data for security confirmation and wherein the actual line switching operation is not performed. In the test mode, when notifying test data for confirmation of another station, the call terminating station side notifies the accurate data, while the call originating station side activating the test mode notifies deliberately changed check data thereby enabling a test for confirmation of the continuance of connection with a backup line without suspending communication with the working line.

    摘要翻译： 一种数据传输系统，除了正常的系统操作模式之外，还具有测试模式，其中多个站通过发送和接收用于安全确认的检查数据来确认彼此，并且其中不执行实际的线路切换操作。 在测试模式下，当通知用于确认另一站的测试数据时，呼叫终端站侧通知准确的数据，而启动测试模式的呼叫发起站侧通知故意改变的检查数据，从而使得能够进行用于确认 与备用线路的连接，而不中断与工作线路的通信。

    Process for the formation of a metal pattern
    10.
    发明授权
    Process for the formation of a metal pattern 失效
    用于形成金属图案的工艺

    公开(公告)号：US5670297A

    公开(公告)日：1997-09-23

    申请号：US556426

    申请日：1995-11-09

    申请人： Tohru Ogawa ,  Hiroyuki Nakano

    发明人： Tohru Ogawa ,  Hiroyuki Nakano

    IPC分类号： G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/768 ,  G03F7/38

    CPC分类号： G03F7/70691 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76838 ,  Y10S430/151

    摘要： A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.

    摘要翻译： 一种用于形成金属图案的方法，包括以下步骤：在下面的基底上形成硅化物金属膜，在其上形成硅化金属膜的下面的基底上形成防反射膜，在防反射层上形成抗蚀剂膜 膜，通过光刻法形成抗蚀剂膜以形成预定图案，并使用如此构图的抗蚀剂膜作为掩模，并蚀刻下面的衬底上的硅化金属膜，其中确定抗反射膜的光学常数和厚度 以根据硅化物金属膜的类型在光刻时给出最小的驻波效应。