Abstract:
A process for the production of a basic alkaline earth metal phenate is disclosed. The process comprises reacting a phenol, a dihydric alcohol, and an alkaline earth metal agent selected from alkaline earth metal oxides and hydroxides to achieve the addition of the alkaline earth metal to the phenol, wherein water is added to the reaction system in an amount of from 0.01 to 10 mols per mol of the alkaline earth metal agent. This basic alkaline earth metal phenate is useful as an additive for lubricating oils and fuel oils.
Abstract:
A process for producing a mixture of sulfides of alkaline earth metal salts of an alkylhydroxybenzoic acid and an alkylphenol comprising the steps of: reacting a mixture of a phenol, a dihydric alcohol and an alkaline earth metal oxide and/or hydroxide (hereinafter referred to as an alkaline earth metal reagent) in an amount of no more than 0.99 gram equivalents per gram equivalent of said phenol; distilling off water and the dihydric alcohol until the amount of the dihydric alcohol becomes no more than 0.6 moles per mole of the alkaline earth metal reagent; reacting the resulting distillation residue with carbon dioxide; and reacting the resulting product with elemental sulfur in an amount of 0.1-4.0 moles per mole of the alkaline earth metal reagent.
Abstract:
A process for producing an over-based sulfurized alkaline earth metal phenate type detergent, which comprises reacting a phenol and a dihydric alcohol with an alkaline earth metal reagent to carry out a metal addition reaction, and reacting sulfur therewith to carry out a sulfurization reaction, and then reacting carbon dioxide therewith to carry out a carbon dioxide treatment, characterized in that the metal addition reaction and the sulfurization reaction are carried out under pressure and closed conditions. The sulfurization reaction may be carried out simultaneously with the metal addition reaction, or, alternatively, with the carbon dioxide treatment after the metal addition reaction. Furthermore, the sulfurization reaction may be carried out between the metal addition reaction and the carbon dioxide treatment.
Abstract:
The problem of providing a metal complex having excellent gas adsorption performance, gas storage performance, and gas separation performance is solved by a metal complex comprising a dicarboxylic acid compound (I) including 20 to 99 mole % of a dicarboxylic acid compound (I-1) selected from terephthalic acid derivatives having an electron-donating group in the 2nd position such as 2-methoxyterephthalic acid, 2-methylterephthalic acid, and terephthalic acid, and 80 to 1 mole % of a dicarboxylic acid compound (I-2) selected from terephthalic acid derivatives having an electron-withdrawing group in the 2nd position such as 2-nitroterephthalic acid, 2-fluoroterephthalic acid, 2-chloroterephthalic acid, 2-bromoterephthalic acid, and 2-iodoterephthalic acid; at least one kind of metal ion selected from metal ions belonging to Group 2 and Groups 7 to 12 of the periodic table; and an organic ligand capable of bidentate binding to the metal ion.
Abstract:
A torque fluctuation absorber includes a center plate rotatably arranged, a side plate arranged coaxially with and rotatably relative to the center plate, an elastic member accommodated in a space surrounded by the side plate and absorbing torque fluctuations generated between the side plate and the center plate, a cover member separating the space and an outside space from each other by covering a clearance between the center plate and the side plate, and a vent portion arranged inwardly in a radial direction of the side plate relative to the cover member and providing a ventilation between the space and the outside space.
Abstract:
The present invention is directed to an MIS type semiconductor device, including a channel layer between a semiconductor body region and a gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region. Since Vfb of the semiconductor device is equivalent to or less than a gate rated voltage Vgcc− of the semiconductor device with respect to an OFF-polarity, density of carrier charge that is induced near the surface of the semiconductor body region is kept at a predetermined amount or less with a guaranteed range of operation of the semiconductor device.
Abstract:
The present invention provides hydrogenated β-pinene-based polymers with excellent heat resistance and light resistance, low absorptivity and high transparency, as well as molded articles thereof. The polymers of the present invention contain 50% by mass or more of β-pinene units and are hydrogenated β-pinene-based polymers where the ratio of the proton integral value at 6 to 8 ppm to the total proton integral value in a 1H-NMR spectrum is 2.3×10−5 or less or the p-phenylene group content is 0.0055% by mass or less, and the ratio of the proton integral value at 4.5 to 6 ppm to the total proton integral value is 2.8×10−4 or less or the cyclohexene-1,4-diyl group content is 0.29% by mass or less. The molded articles of the present invention contain the above hydrogenated β-pinene-based polymers.
Abstract:
There is provided a charging device having high durability, of which controllability of charged potential of a photoreceptor is hardly impaired even with a some amount of contaminants such as a toner so that control of charged potential of a photoreceptor can be stably carried out to fall in an appropriate range over a long period of time, and moreover which is inexpensive. As a grid electrode, one prepared by forming a composite plated layer composed of three layers of an Sn plated layer, an Sn—Co plated layer and a Ni plated layer is used. More preferably, an upper layer is an Sn plated layer, an intermediate layer is an Sn—Co plated layer and a lower layer is a Ni plated layer.
Abstract:
A sheet transport guide includes a torsion coil spring (X). The spring (X) has a first arm (B4) with an end (B5). Through the end (B5), the spring (X) supports a rotation shaft of driven roller (R32) and applies elastic force to the roller (R32). Through the arm (B4) that is curved, the spring (X) guides a sheet toward a rotation roller R31. The spring (X) has a coil portion (B1) and an end (B3) of a second arm (B3) both fixed to a frame of an apparatus body. A plurality of driven rollers (R32) are aligned approximately parallel to a shaft (R31a) of the roller (R31). The rollers (R32) are each provided with the springs (X). A largest elastic force is applied to the roller (R32) at a predetermined reference position, and smaller elastic forces are applied to the other rollers (R32) at positions distant from the reference position.
Abstract:
An infrared light irradiation lamp comprises a lighting chamber S formed by a lamp body 12 and a front lens 14, a reflector 16 provided in the lamp body 12, a light source 20 provided ahead of the reflector 16 in the lighting chamber S, and a cylindrical globe 30 for infrared light formation which is provided to cover the light source 20 and serves to shield a visible light and to transmit only an infrared light, wherein diffusion steps 17 and 15 are provided in a peripheral region 16a of the light source in the reflector 16 and/or a region 14a in the front lens 14 corresponding to the peripheral region 16a of the light source in the reflector. Thus, a red light component L2 of a visible light transmitted through the globe 30 and guided to the peripheral region 16a of the light source in the reflector is diffused and reflected (L21, L22) or is diffused and emitted through the region 14a of the central part of the front lens so that the luminous flux density of the red light component distributed forward is reduced to dilute a red light emitted from the lamp.