公开(公告)号：US11101178B2

公开(公告)日：2021-08-24

申请号：US16417050

申请日：2019-05-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuo-Sheng Chuang ,  You-Hua Chou ,  Yusuke Oniki

IPC分类号： H01L21/82 ,  H01L27/08 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L27/092 ,  H01L21/8238

摘要： A method including forming a first insulating film over a first fin structure. The method further includes removing the first insulating film to expose a portion of the first fin structure. The method further includes forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.

公开(公告)号：US10297505B2

公开(公告)日：2019-05-21

申请号：US15877958

申请日：2018-01-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuo-Sheng Chuang ,  You-Hua Chou ,  Yusuke Oniki

IPC分类号： H01L21/8234 ,  H01L27/092 ,  H01L27/088 ,  H01L21/02

摘要： A method of manufacturing a semiconductor device includes forming a first insulating film over a first fin structure and a second insulating film over a second fin structure, coating a protective layer over the second insulating film, removing the first insulating film to expose a portion of the first fin structure, and forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.

公开(公告)号：US09761440B2

公开(公告)日：2017-09-12

申请号：US14658012

申请日：2015-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yusuke Oniki ,  Andrew Joseph Kelly

IPC分类号： H01L21/306 ,  H01L21/314 ,  H01L23/29 ,  H01L21/02 ,  H01L23/31 ,  H01L29/45 ,  H01L29/20 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/02227 ,  H01L21/02175 ,  H01L21/02241 ,  H01L21/28264 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/20 ,  H01L29/452 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66522 ,  H01L29/78

摘要： The present disclosure provides a semiconductor structure in accordance with some embodiments. The semiconductor structure includes a semiconductor feature, a passivation layer that includes indium sulfide formed over a surface of the semiconductor feature. More particularly, the surface of the semiconductor feature comprises indium-based III-V compound semiconductor material.

公开(公告)号：US20160343605A1

公开(公告)日：2016-11-24

申请号：US14720407

申请日：2015-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/0653 ,  H01L21/02236 ,  H01L21/76224 ,  H01L29/66795

摘要： A method to provide an isolation feature over a semiconductor structure is disclosed. The method includes forming a fin structure over a semiconductor substrate, forming an oxide layer over the fin structure, wherein forming the oxide layer includes performing a wet chemical oxidation process on the fin structure with a solvent mixture, forming a dielectric layer over the oxide layer, and forming at least one isolation feature over the semiconductor structure.

摘要翻译： 公开了一种在半导体结构上提供隔离特征的方法。 该方法包括在半导体衬底上形成翅片结构，在翅片结构上形成氧化物层，其中形成氧化物层包括用溶剂混合物在鳍结构上进行湿化学氧化处理，在氧化物层上形成电介质层 并且在所述半导体结构上形成至少一个隔离特征。

公开(公告)号：US20150062561A1

公开(公告)日：2015-03-05

申请号：US14017079

申请日：2013-09-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Liang-Gi Yao ,  Yasutoshi Okuno ,  Wei-Shan Hu ,  Yusuke Oniki ,  Ling-Yen Yeh ,  Clement Hsingjen Wann

IPC分类号： G01N21/65 ,  G01Q30/02

CPC分类号： G01N21/65 ,  G01N21/658 ,  G01Q30/02

摘要： A method includes performing a first probing on a sample integrated circuit structure to generate a first Raman spectrum. During the first probing, a first laser beam having a first wavelength is projected on the sample integrated circuit structure. The method further includes performing a second probing on the sample integrated circuit structure to generate a second Raman spectrum, wherein a Tip-Enhanced Raman Scattering (TERS) method is used to probe the sample integrated circuit structure. During the second probing, a second laser beam having a second wavelength different from the first wavelength is projected on the sample integrated circuit structure. A stress in a first probed region of the sample integrated circuit structure is then from the first Raman spectrum and the second Raman spectrum.

摘要翻译： 一种方法包括对采样集成电路结构执行第一探测以产生第一拉曼光谱。 在第一次探测期间，具有第一波长的第一激光束投射在样品集成电路结构上。 该方法还包括在样本集成电路结构上执行第二探测以产生第二拉曼光谱，其中使用尖端增强拉曼散射（TERS）方法来探测样本集成电路结构。 在第二次探测期间，具有与第一波长不同的第二波长的第二激光束投射在样本集成电路结构上。 然后，样品集成电路结构的第一探测区域中的应力来自第一拉曼光谱和第二拉曼光谱。

公开(公告)号：US09911806B2

公开(公告)日：2018-03-06

申请号：US14720407

申请日：2015-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/0653 ,  H01L21/02236 ,  H01L21/76224 ,  H01L29/66795

摘要： A method to provide an isolation feature over a semiconductor structure is disclosed. The method includes forming a fin structure over a semiconductor substrate, forming an oxide layer over the fin structure, wherein forming the oxide layer includes performing a wet chemical oxidation process on the fin structure with a solvent mixture, forming a dielectric layer over the oxide layer, and forming at least one isolation feature over the semiconductor structure.

公开(公告)号：US09194804B2

公开(公告)日：2015-11-24

申请号：US14017079

申请日：2013-09-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Liang-Gi Yao ,  Yasutoshi Okuno ,  Wei-Shan Hu ,  Yusuke Oniki ,  Ling-Yen Yeh ,  Clement Hsingjen Wann

IPC分类号： G01N21/00 ,  G01N21/65 ,  G01Q30/02

CPC分类号： G01N21/65 ,  G01N21/658 ,  G01Q30/02

摘要： A method includes performing a first probing on a sample integrated circuit structure to generate a first Raman spectrum. During the first probing, a first laser beam having a first wavelength is projected on the sample integrated circuit structure. The method further includes performing a second probing on the sample integrated circuit structure to generate a second Raman spectrum, wherein a Tip-Enhanced Raman Scattering (TERS) method is used to probe the sample integrated circuit structure. During the second probing, a second laser beam having a second wavelength different from the first wavelength is projected on the sample integrated circuit structure. A stress in a first probed region of the sample integrated circuit structure is then from the first Raman spectrum and the second Raman spectrum.

摘要翻译： 一种方法包括对采样集成电路结构执行第一探测以产生第一拉曼光谱。 在第一次探测期间，具有第一波长的第一激光束投射在样品集成电路结构上。 该方法还包括在样本集成电路结构上执行第二探测以产生第二拉曼光谱，其中使用尖端增强拉曼散射（TERS）方法来探测样本集成电路结构。 在第二次探测期间，具有与第一波长不同的第二波长的第二激光束投射在样本集成电路结构上。 然后，样品集成电路结构的第一探测区域中的应力来自第一拉曼光谱和第二拉曼光谱。

公开(公告)号：US12027424B2

公开(公告)日：2024-07-02

申请号：US17388512

申请日：2021-07-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuo-Sheng Chuang ,  You-Hua Chou ,  Yusuke Oniki

IPC分类号： H01L21/8234 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092

CPC分类号： H01L21/823462 ,  H01L21/02238 ,  H01L21/02282 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823857 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/0928

摘要： A semiconductor integrated circuit (IC) including a first fin structure having a first aqueous soluble channel layer. The semiconductor IC includes a first gate structure over the first aqueous soluble channel layer, wherein the first gate structure includes a first oxide film directly contacting the first aqueous soluble channel layer, and the first oxide film includes a first material. The semiconductor IC includes a first spacer along the first gate structure, wherein a bottom surface of the first spacer is above an interface between the first oxide layer and the first aqueous soluble channel layer. The semiconductor IC includes a second fin structure having a second aqueous soluble channel layer. The semiconductor IC includes a second gate structure over the second aqueous channel layer, wherein the second gate structure includes a second oxide film directly contacting the second aqueous soluble channel layer, the second oxide film includes a second material.

公开(公告)号：US11600716B2

公开(公告)日：2023-03-07

申请号：US17107115

申请日：2020-11-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/3213 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/06 ,  H01L29/45

摘要： Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.

公开(公告)号：US20160268122A1

公开(公告)日：2016-09-15

申请号：US14658012

申请日：2015-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yusuke Oniki ,  Andrew Joseph Kelly

IPC分类号： H01L21/02 ,  H01L23/29 ,  H01L29/78 ,  H01L29/20 ,  H01L29/51 ,  H01L29/66 ,  H01L23/31 ,  H01L29/45

CPC分类号： H01L21/02227 ,  H01L21/02175 ,  H01L21/02241 ,  H01L21/28264 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/20 ,  H01L29/452 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66522 ,  H01L29/78

摘要： The present disclosure provides a semiconductor structure in accordance with some embodiments. The semiconductor structure includes a semiconductor feature, a passivation layer that includes indium sulfide formed over a surface of the semiconductor feature. More particularly, the surface of the semiconductor feature comprises indium-based III-V compound semiconductor material.

摘要翻译： 本公开提供了根据一些实施例的半导体结构。 半导体结构包括半导体特征，包括在半导体特征的表面上形成的硫化铟的钝化层。 更具体地，半导体特征的表面包括基于铟的III-V族化合物半导体材料。