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公开(公告)号：US11703523B2
公开(公告)日：2023-07-18
申请号：US17381195
申请日：2021-07-21
发明人： Wei-Shan Hu , Dong Gui , Jang-Jung Lee
摘要： A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.
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2.发明申请Stress Analysis of 3-D Structures Using Tip-Enhanced Raman Scattering Technology 有权使用尖端增强拉曼散射技术的三维结构的应力分析公开(公告)号：US20150062561A1
公开(公告)日：2015-03-05
申请号：US14017079
申请日：2013-09-03
发明人： Liang-Gi Yao , Yasutoshi Okuno , Wei-Shan Hu , Yusuke Oniki , Ling-Yen Yeh , Clement Hsingjen Wann
CPC分类号： G01N21/65 , G01N21/658 , G01Q30/02
摘要： A method includes performing a first probing on a sample integrated circuit structure to generate a first Raman spectrum. During the first probing, a first laser beam having a first wavelength is projected on the sample integrated circuit structure. The method further includes performing a second probing on the sample integrated circuit structure to generate a second Raman spectrum, wherein a Tip-Enhanced Raman Scattering (TERS) method is used to probe the sample integrated circuit structure. During the second probing, a second laser beam having a second wavelength different from the first wavelength is projected on the sample integrated circuit structure. A stress in a first probed region of the sample integrated circuit structure is then from the first Raman spectrum and the second Raman spectrum.
摘要翻译： 一种方法包括对采样集成电路结构执行第一探测以产生第一拉曼光谱。 在第一次探测期间，具有第一波长的第一激光束投射在样品集成电路结构上。 该方法还包括在样本集成电路结构上执行第二探测以产生第二拉曼光谱，其中使用尖端增强拉曼散射（TERS）方法来探测样本集成电路结构。 在第二次探测期间，具有与第一波长不同的第二波长的第二激光束投射在样本集成电路结构上。 然后，样品集成电路结构的第一探测区域中的应力来自第一拉曼光谱和第二拉曼光谱。
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公开(公告)号：US20210349126A1
公开(公告)日：2021-11-11
申请号：US17381195
申请日：2021-07-21
发明人： Wei-Shan Hu , Dong Gui , Jang-Jung Lee
摘要： A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.
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4.发明授权Stress analysis of 3-D structures using tip-enhanced Raman scattering technology 有权使用尖端增强拉曼散射技术的3-D结构的应力分析公开(公告)号：US09194804B2
公开(公告)日：2015-11-24
申请号：US14017079
申请日：2013-09-03
发明人： Liang-Gi Yao , Yasutoshi Okuno , Wei-Shan Hu , Yusuke Oniki , Ling-Yen Yeh , Clement Hsingjen Wann
CPC分类号： G01N21/65 , G01N21/658 , G01Q30/02
摘要： A method includes performing a first probing on a sample integrated circuit structure to generate a first Raman spectrum. During the first probing, a first laser beam having a first wavelength is projected on the sample integrated circuit structure. The method further includes performing a second probing on the sample integrated circuit structure to generate a second Raman spectrum, wherein a Tip-Enhanced Raman Scattering (TERS) method is used to probe the sample integrated circuit structure. During the second probing, a second laser beam having a second wavelength different from the first wavelength is projected on the sample integrated circuit structure. A stress in a first probed region of the sample integrated circuit structure is then from the first Raman spectrum and the second Raman spectrum.
摘要翻译： 一种方法包括对采样集成电路结构执行第一探测以产生第一拉曼光谱。 在第一次探测期间，具有第一波长的第一激光束投射在样品集成电路结构上。 该方法还包括在样本集成电路结构上执行第二探测以产生第二拉曼光谱，其中使用尖端增强拉曼散射（TERS）方法来探测样本集成电路结构。 在第二次探测期间，具有与第一波长不同的第二波长的第二激光束投射在样本集成电路结构上。 然后，样品集成电路结构的第一探测区域中的应力来自第一拉曼光谱和第二拉曼光谱。
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