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公开(公告)号:US20240107780A1
公开(公告)日:2024-03-28
申请号:US18150569
申请日:2023-01-05
发明人: Chih-Wei WU , Ying-Ching SHIH , Wen-Chih CHIOU , An-Jhih SU , Chia-Nan YUAN
CPC分类号: H10B80/00 , H01L23/293 , H01L23/3135 , H01L23/3185 , H01L23/3192 , H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/11 , H01L24/81 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/08145 , H01L2224/08265 , H01L2224/119 , H01L2224/13018 , H01L2224/13082 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16227 , H01L2224/16238 , H01L2224/81191 , H01L2224/81193
摘要: A system on chip (SoC) die package is attached to a redistribution structure of a semiconductor device package such that a top surface of the SoC die package is above a top surface of an adjacent memory die package. This may be achieved through the use of various attachment structures that increase the height of the SoC die package. After encapsulating the memory die package and the SoC die package in an encapsulation layer, the encapsulation layer is grinded down. The top surface of the SoC die package being above the top surface of the adjacent memory die package results in the top surface of the SoC die package being exposed through the encapsulation layer after the grinding operation. This enables heat to be dissipated through the top surface of the SoC die package.