公开(公告)号：US11754614B2

公开(公告)日：2023-09-12

申请号：US17246071

申请日：2021-04-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Wei-Jhih Wang ,  Chia Wei Huang ,  Chia-Chia Kan ,  Yuan-Yao Chang

IPC分类号： G01R31/26 ,  H01L27/088 ,  G01R19/165 ,  H01L23/528 ,  G01R19/10 ,  H10B10/00

CPC分类号： G01R31/2601 ,  G01R19/10 ,  G01R19/165 ,  H01L23/5286 ,  H01L27/0886 ,  H10B10/12

摘要： The present disclosure provides a method of analyzing a semiconductor device. The method includes providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor; connecting a power-supply voltage (Vdd) to the gate electrode to turn on the first transistor, determining a first threshold voltage (Vth) based on the power-supply voltage; switching the power-supply voltage to a ground voltage (Vss); connecting the ground voltage to the gate electrode to turn on the second transistor; and determining a second threshold voltage based on the ground voltage.

公开(公告)号：US20150041891A1

公开(公告)日：2015-02-12

申请号：US13963658

申请日：2013-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Ming Huang ,  Chia-Chia Kan ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Po-Tao Chu

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66613 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7824 ,  H01L29/7835

摘要： Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

摘要翻译： 本公开的实施例包括半导体器件，超高电压（UHV）横向扩散金属氧化物半导体（LDMOS）晶体管及其形成方法。 一个实施例包括在衬底的顶表面中的第一导电类型的第一阱区域和在衬底的顶表面中的第二导电类型的第二阱区域。 第二阱区域由衬底的一部分与第一阱区域横向分离。 该实施例还包括第一阱区中的第二导电类型的第三区域和第一阱区域中的第一场氧化物区域，第二阱区域中的第二场氧化物区域，第二场氧化物区域具有第二底部区域 表面，并且第一场氧化物区域具有比第二底表面低的第一底表面，并且直接接触第三区域。

公开(公告)号：US11121046B2

公开(公告)日：2021-09-14

申请号：US16249315

申请日：2019-01-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pei-Hsuan Lee ,  Yu-Hsuan Huang ,  Chia-Chia Kan

IPC分类号： H01L21/66 ,  G06T7/00 ,  H01L21/67 ,  G01R31/50

摘要： A method includes: coupling a first end of a first conductive trace to a free electron source; scanning exposed surfaces of the first and a second conductive traces with an electron beam, the first conductive trace and a second conductive trace being alternately arranged and spaced apart; obtaining an image of the first conductive trace and the second conductive trace while performing the scanning; and determining a routing characteristic of the first conductive trace and the second conductive trace based on the image.

公开(公告)号：US09184282B2

公开(公告)日：2015-11-10

申请号：US13963658

申请日：2013-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Ming Huang ,  Chia-Chia Kan ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66613 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7824 ,  H01L29/7835

摘要： Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

摘要翻译： 本公开的实施例包括半导体器件，超高电压（UHV）横向扩散金属氧化物半导体（LDMOS）晶体管及其形成方法。 一个实施例包括在衬底的顶表面中的第一导电类型的第一阱区域和在衬底的顶表面中的第二导电类型的第二阱区域。 第二阱区域由衬底的一部分与第一阱区域横向分离。 该实施例还包括第一阱区中的第二导电类型的第三区域和第一阱区域中的第一场氧化物区域，第二阱区域中的第二场氧化物区域，第二场氧化物区域具有第二底部区域 表面，并且第一场氧化物区域具有比第二底表面低的第一底表面，并且直接接触第三区域。