公开(公告)号：US20150041891A1

公开(公告)日：2015-02-12

申请号：US13963658

申请日：2013-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Ming Huang ,  Chia-Chia Kan ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Po-Tao Chu

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66613 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7824 ,  H01L29/7835

摘要： Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

摘要翻译： 本公开的实施例包括半导体器件，超高电压（UHV）横向扩散金属氧化物半导体（LDMOS）晶体管及其形成方法。 一个实施例包括在衬底的顶表面中的第一导电类型的第一阱区域和在衬底的顶表面中的第二导电类型的第二阱区域。 第二阱区域由衬底的一部分与第一阱区域横向分离。 该实施例还包括第一阱区中的第二导电类型的第三区域和第一阱区域中的第一场氧化物区域，第二阱区域中的第二场氧化物区域，第二场氧化物区域具有第二底部区域 表面，并且第一场氧化物区域具有比第二底表面低的第一底表面，并且直接接触第三区域。

公开(公告)号：US09184282B2

公开(公告)日：2015-11-10

申请号：US13963658

申请日：2013-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Ming Huang ,  Chia-Chia Kan ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66613 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7824 ,  H01L29/7835

摘要： Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

摘要翻译： 本公开的实施例包括半导体器件，超高电压（UHV）横向扩散金属氧化物半导体（LDMOS）晶体管及其形成方法。 一个实施例包括在衬底的顶表面中的第一导电类型的第一阱区域和在衬底的顶表面中的第二导电类型的第二阱区域。 第二阱区域由衬底的一部分与第一阱区域横向分离。 该实施例还包括第一阱区中的第二导电类型的第三区域和第一阱区域中的第一场氧化物区域，第二阱区域中的第二场氧化物区域，第二场氧化物区域具有第二底部区域 表面，并且第一场氧化物区域具有比第二底表面低的第一底表面，并且直接接触第三区域。

公开(公告)号：US09748377B2

公开(公告)日：2017-08-29

申请号：US14886314

申请日：2015-10-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzu-Ming Huang ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

摘要： A semiconductor device includes a gate structure, a source region and a drain region. The source region and the drain region are on opposite sides of the gate structure. The source region includes a first region of a first conductivity type and a second region of a second conductivity type. The second conductivity type is opposite to the first conductivity type. The first region is between the second region and the gate structure. The second region includes at least one projection protruding into the first region and toward the gate structure.

公开(公告)号：US09166046B2

公开(公告)日：2015-10-20

申请号：US14181430

申请日：2014-02-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzu-Ming Huang ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

摘要： A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.

摘要翻译： 半导体器件包括栅极结构，以及栅极结构的相对侧上的源极区域和漏极区域。 源区包括第一导电类型的第一区域和第二导电类型的第二区域，第二导电类型与第一导电类型相反。 第一区域布置在第二区域和栅极结构之间。 第二区域包括突出到第一区域中并朝向栅极结构的至少一个突起。