公开(公告)号：US20240361381A1

公开(公告)日：2024-10-31

申请号：US18766856

申请日：2024-07-09

申请人： Taiwan Semiconductor Manufacturing Company, LTD.

发明人： Yu-Hsuan Huang ,  Chien-Liang Chen ,  Pei-Hsuan Lee

IPC分类号： G01R31/307 ,  H01L21/66

CPC分类号： G01R31/307 ,  H01L22/34

摘要： In a semiconductor manufacturing method includes providing a plurality of patterns on a semiconductor substrate. The patterns include an NMOS structure arranged next to an N+/N well structure, and/or a PMOS structure arranged next to a P+/P well structure. The method further includes: receiving a plurality of images by applying an electron beam to the patterns; and transferring the semiconductor substrate to a next process step if there is no image conversion according to a predetermined image contrast property of the patterns.

公开(公告)号：US11121046B2

公开(公告)日：2021-09-14

申请号：US16249315

申请日：2019-01-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pei-Hsuan Lee ,  Yu-Hsuan Huang ,  Chia-Chia Kan

IPC分类号： H01L21/66 ,  G06T7/00 ,  H01L21/67 ,  G01R31/50

摘要： A method includes: coupling a first end of a first conductive trace to a free electron source; scanning exposed surfaces of the first and a second conductive traces with an electron beam, the first conductive trace and a second conductive trace being alternately arranged and spaced apart; obtaining an image of the first conductive trace and the second conductive trace while performing the scanning; and determining a routing characteristic of the first conductive trace and the second conductive trace based on the image.