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公开(公告)号：US20240429036A1
公开(公告)日：2024-12-26
申请号：US18337430
申请日：2023-06-20
Inventor： Chia-Hsi Wang , Yen-Yu Chen
Abstract: A physical vapor deposition (PVD) system includes: a chamber body; a substrate support disposed within the chamber body and capable of supporting a substrate; a PVD target; and a target profile monitoring subsystem. The PVD target includes: a target plate comprising a target material; and a backing plate attached to the target plate and comprising: a central section; and a peripheral section circumferentially surrounding the central section in a horizontal plane. The peripheral section has a first thickness in a vertical direction, the central section has a second thickness in the vertical direction, and the first thickness is larger than the second thickness. The target profile monitoring subsystem is configured to monitor usage of the target plate.
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公开(公告)号：US20240377732A1
公开(公告)日：2024-11-14
申请号：US18780821
申请日：2024-07-23
Inventor： Chih-Cheng Liu , Yi-Chen Kuo , Yen-Yu Chen , Jr-Hung Li , Chi-Ming Yang , Tze-Liang Lee
Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.
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公开(公告)号：US12089506B2
公开(公告)日：2024-09-10
申请号：US17578347
申请日：2022-01-18
Inventor： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
CPC classification number: H10N50/80 , C23C14/3407 , H10N50/01
Abstract: A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.
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公开(公告)号：US20240271271A1
公开(公告)日：2024-08-15
申请号：US18326256
申请日：2023-05-31
Inventor： Chia-Hsi Wang , Yen-Yu Chen
IPC: C23C14/34 , C23C14/54 , C23C14/58 , H01J37/34 , H01L21/285 , H01L21/321
CPC classification number: C23C14/3492 , C23C14/54 , C23C14/588 , H01J37/3435 , H01L21/2855 , H01L21/3212 , H01J2237/24585 , H01J2237/332
Abstract: A method for fabricating semiconductor devices is disclosed. The method includes introducing a target in a chamber of a physical vapor deposition (PVD) system. The method includes depositing, on a substrate, a first portion of a film based on a first compensation function, a first value of the first compensation function being determined according to a lifetime of the target. The method includes depositing, on the first portion of the film, a second portion of the film based on a second compensation function, a second value of the second compensation function being determined according to the lifetime of the target. The first value is different from the second value.
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公开(公告)号：US12030008B2
公开(公告)日：2024-07-09
申请号：US17387951
申请日：2021-07-28
Inventor： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC: B01D45/14 , C23C16/44 , C23C16/455
CPC classification number: B01D45/14 , C23C16/4407 , C23C16/45544
Abstract: A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.
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Patent Agency Ranking
公开(公告)号：US20230367208A1
公开(公告)日：2023-11-16
申请号：US18355641
申请日：2023-07-20
Inventor： Chih-Cheng Liu , Yi-Chen Kuo , Yen-Yu Chen , Jr-Hung Li , Chi-Ming Yang , Tze-Liang Lee
CPC classification number: G03F7/0042 , C07F5/003 , C07F9/902 , C07F9/94 , C07F7/2284 , G03F7/2004
Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.
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7.发明公开公开(公告)号：US20230335423A1
公开(公告)日：2023-10-19
申请号：US17723372
申请日：2022-04-18
Inventor： Chia-Hsi Wang , Yen-Yu Chen
IPC: H01L21/677 , H01L21/67 , C23C16/54 , C23C16/46 , C23C14/56
CPC classification number: H01L21/67742 , H01L21/67248 , C23C16/54 , C23C16/463 , C23C14/568 , H01L21/68707
Abstract: A multi-chamber semiconductor processing system is provided. The multi-chamber semiconductor processing system includes: a plurality of chambers, each of the plurality of chambers corresponding to a semiconductor process; a transfer chamber; a transfer robot in the transfer chamber and having a holding member capable of holding a wafer, the transfer robot configured to transfer the wafer among the plurality of chambers; a first temperature sensor mounted on the holding member and configured to detect a transfer robot temperature; and a temperature adjustment unit mounted on the transfer robot and configured to adjust the transfer robot temperature.
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公开(公告)号：US20230317757A1
公开(公告)日：2023-10-05
申请号：US17828346
申请日：2022-05-31
Inventor： Yen-Ting Chiang , Yen-Yu Chen , Wen Hao Chang , Tzu-Hsuan Hsu , Feng-Chi Hung , Shyh-Fann Ting , Jen-Cheng Liu
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14685 , H01L27/14643 , H01L27/14641
Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a plurality of photodetectors disposed within a substrate. The substrate comprises a front-side surface opposite a back-side surface. An outer isolation structure is disposed in the substrate and laterally surrounds the plurality of photodetectors. The outer isolation structure has a first height. An inner isolation structure is spaced between sidewalls of the outer isolation structure. The inner isolation structure is disposed between adjacent photodetectors in the plurality of photodetectors. The outer isolation structure and the inner isolation structure respectively extend from the back-side surface toward the front-side surface. The inner isolation structure comprises a second height less than the first height.
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公开(公告)号：US11670594B2
公开(公告)日：2023-06-06
申请号：US17308321
申请日：2021-05-05
Inventor： Wen-Chun Wang , Tzy-Kuang Lee , Chih-Hsien Lin , Ching-Hung Kao , Yen-Yu Chen
IPC: H01L23/532 , H01L23/522 , H01L23/31 , H01L23/29 , H01L21/768 , H01L23/528 , H01L21/56
CPC classification number: H01L23/53238 , H01L21/56 , H01L21/76831 , H01L21/76832 , H01L21/76871 , H01L23/291 , H01L23/3171 , H01L23/5223 , H01L23/5226 , H01L23/5283
Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.
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公开(公告)号：US20230010438A1
公开(公告)日：2023-01-12
申请号：US17585252
申请日：2022-01-26
Inventor： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC: H01L23/532 , H01L21/02 , H01L23/535 , H01L21/762
Abstract: A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.
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