公开(公告)号：US20230317757A1

公开(公告)日：2023-10-05

申请号：US17828346

申请日：2022-05-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yen-Ting Chiang ,  Yen-Yu Chen ,  Wen Hao Chang ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung ,  Shyh-Fann Ting ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14685 ,  H01L27/14643 ,  H01L27/14641

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a plurality of photodetectors disposed within a substrate. The substrate comprises a front-side surface opposite a back-side surface. An outer isolation structure is disposed in the substrate and laterally surrounds the plurality of photodetectors. The outer isolation structure has a first height. An inner isolation structure is spaced between sidewalls of the outer isolation structure. The inner isolation structure is disposed between adjacent photodetectors in the plurality of photodetectors. The outer isolation structure and the inner isolation structure respectively extend from the back-side surface toward the front-side surface. The inner isolation structure comprises a second height less than the first height.