公开(公告)号：US20240387380A1

公开(公告)日：2024-11-21

申请号：US18785281

申请日：2024-07-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

公开(公告)号：US20230052604A1

公开(公告)日：2023-02-16

申请号：US17574257

申请日：2022-01-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ching-Hung Kao ,  Kuei-Yu Deng ,  Tzy-Kuang Lee

IPC: H01L23/00

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device may include a substrate, a first via, a first pad, a second pad, and a first passivation layer. The first pad may be over the substrate. The second pad may be over the substrate. The second pad may be parallel to the first pad. The first passivation layer may surround the first pad and the second pad. The first passivation layer may include a first part on the first pad. The first passivation layer may include a second part on the second pad. A thickness of the first part of the first passivation layer may exceed a height of the first pad. A thickness of the second part of the first passivation layer may exceed a height of the second pad.

公开(公告)号：US11670594B2

公开(公告)日：2023-06-06

申请号：US17308321

申请日：2021-05-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L21/768 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/53238 ,  H01L21/56 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76871 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/5283

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

公开(公告)号：US20230299124A1

公开(公告)日：2023-09-21

申请号：US17700380

申请日：2022-03-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Jen Wang ,  Ching-Hung Kao ,  Tzy-Kuang Lee ,  Meng-Chang Ho ,  Kun-Mao Wu

IPC: H01L49/02 ,  H01L23/522

CPC classification number: H01L28/60 ,  H01L23/5226 ,  H01L27/0629

Abstract: A method of forming a capacitor is disclosed. The method includes forming a portion of a metallization layer on a substrate, forming a via layer on the substrate, and forming a first electrode between the metallization layer and the via layer, where the first electrode is electrically connected to the metallization layer. The method also includes forming a second electrode between the metallization layer and the via layer, where the second electrode is electrically connected to the via layer, and forming a dielectric layer between the first electrode and the second electrode, where the first electrode is not electrically connected to any other conductors other than through the metallization layer, and where the second electrode is not electrically connected to any conductors other than through the via layer.

公开(公告)号：US20220223536A1

公开(公告)日：2022-07-14

申请号：US17308321

申请日：2021-05-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L23/528 ,  H01L21/56 ,  H01L21/768

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

公开(公告)号：US20230307366A1

公开(公告)日：2023-09-28

申请号：US18328916

申请日：2023-06-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L21/768 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/53238 ,  H01L23/5223 ,  H01L23/3171 ,  H01L23/291 ,  H01L21/76871 ,  H01L23/5283 ,  H01L21/56 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5226

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.