公开(公告)号：US20220223536A1

公开(公告)日：2022-07-14

申请号：US17308321

申请日：2021-05-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L23/528 ,  H01L21/56 ,  H01L21/768

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

公开(公告)号：US20230307366A1

公开(公告)日：2023-09-28

申请号：US18328916

申请日：2023-06-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L21/768 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/53238 ,  H01L23/5223 ,  H01L23/3171 ,  H01L23/291 ,  H01L21/76871 ,  H01L23/5283 ,  H01L21/56 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5226

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

公开(公告)号：US11670594B2

公开(公告)日：2023-06-06

申请号：US17308321

申请日：2021-05-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L21/768 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/53238 ,  H01L21/56 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76871 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/5283

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

公开(公告)号：US20240387380A1

公开(公告)日：2024-11-21

申请号：US18785281

申请日：2024-07-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chun Wang ,  Tzy-Kuang Lee ,  Chih-Hsien Lin ,  Ching-Hung Kao ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.