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    Package structure
    1.
    发明授权
    Package structure 有权

    公开(公告)号：US12191272B2

    公开(公告)日：2025-01-07

    申请号：US18080674

    申请日：2022-12-13

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Tsung-Yen Lee ,  Chin-Hua Wang ,  Ming-Chih Yew ,  Po-Yao Lin ,  Shin-Puu Jeng

    IPC: H01L23/00 ,  H01L23/16 ,  H01L23/31 ,  H01L23/40

    Abstract: A package structure including an organic interposer substrate, a semiconductor die, conductive bumps, an underfill, and an insulating encapsulation is provided. The organic interposer substrate includes stacked organic dielectric layers and conductive wirings embedded in the stacked organic dielectric layers. The semiconductor die is disposed over and electrically connected to the conductive wirings of the organic interposer substrate, and the semiconductor die includes chamfered edges. The conductive bumps are disposed between the semiconductor die and the organic interposer substrate, and the semiconductor die is electrically connected to the organic interposer substrate through the conductive bumps. The underfill is disposed between the semiconductor die and the organic interposer substrate, wherein the underfill encapsulates the conductive bumps and is in contact with the chamfered edges of the at least one semiconductor die. The insulating encapsulation covers the organic interposer substrate and laterally encapsulates the least one semiconductor die and the underfill.

    SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME
    6.
    发明申请
    SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20230063251A1

    公开(公告)日：2023-03-02

    申请号：US17461941

    申请日：2021-08-30

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Li-Ling Liao ,  Ming-Chih Yew ,  Che-Chia Yang ,  Po-Chen Lai ,  Po-Yao Lin ,  Shin-Puu Jeng

    IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

    Abstract: A semiconductor package includes a redistribution structure, a first conductive pillar and a second conductive pillar, and a semiconductor device. The redistribution structure has a first surface and a second surface opposite to the first surface. The first conductive pillar and the second conductive pillar are disposed on the first surface of the redistribution structure and electrically connected with the redistribution structure, wherein a maximum lateral dimension of the first conductive pillar is greater than a maximum lateral dimension of the second conductive pillar, and a topography variation of a top surface of the first conductive pillar is greater than a topography variation of a top surface of the second conductive pillar. The semiconductor device is disposed over the first surface of the redistribution structure, wherein the semiconductor device comprises a third conductive pillar and a fourth conductive pillar, the third conductive pillar is bonded to first conductive pillar through a first joint structure, and the fourth conductive pillar is bonded to second conductive pillar through a second joint structure.

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