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公开(公告)号：US09947737B2
公开(公告)日：2018-04-17
申请号：US15622171
申请日：2017-06-14
发明人： Wenhui Li , Changcheng Lo , Chihyuan Tseng , Yutong Hu
IPC分类号： H01L27/32 , G09G3/3225 , G09G3/32 , H01L29/786
CPC分类号： H01L27/3265 , G09G3/32 , G09G3/3225 , G09G2300/0426 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2300/0852 , H01L27/32 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/786
摘要： A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. An isolation layer with a flat top surface is sandwiched between a transparent electrode and a pixel electrode to form a transparent capacitor.
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2.发明申请公开(公告)号：US20170301884A1
公开(公告)日：2017-10-19
申请号：US15641303
申请日：2017-07-04
发明人： Wenhui Li
CPC分类号： H01L51/5253 , G02F1/13 , G09G3/32 , H01L21/84 , H01L25/167 , H01L27/32 , H01L27/3297 , H01L51/0021 , H01L51/0097 , H01L51/5203 , H01L51/56 , H01L2251/5315 , H01L2251/5338
摘要： A frameless display device includes a conductive connection body formed on a substrate. A first via is formed in a protective layer and located above the conductive connection body. A second via hole is formed in the substrate and located under the conductive connection body. A circuit layout layer is connected through the first via with the conductive connection body and a flexible connection circuit connected to a drive circuit board is connected through the second via with the conductive connection body thereby achieving electrical connection between the drive circuit board and the circuit layout layer. The flexible connection circuit and the drive circuit board are both arranged at a back side of the substrate without occupying an effective display zone.
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公开(公告)号：US20170243902A1
公开(公告)日：2017-08-24
申请号：US15591061
申请日：2017-05-09
发明人： Wenhui Li
IPC分类号： H01L27/12 , H01L29/423 , H01L29/45 , H01L29/417 , H01L29/49 , H01L23/535
CPC分类号： H01L27/1288 , H01L21/77 , H01L23/535 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L51/525 , H01L51/56 , H01L2021/775 , H01L2227/323
摘要： A TFT substrate includes a base plate on which first and second gate electrodes respectively corresponding to first and second TFTs are formed. A gate insulation layer, a semiconductor layer, and an etch stop layer are sequentially formed on the base plate and the first and second electrodes. A single photolithographic process is conducted simultaneously on the gate insulation layer, the semiconductor layer, and the etch stop layer with the same gray tone mask to form separate semiconductor portions for the two TFTs and also form contact holes in the etch stop layer and the gate insulation layer to receive sources and drains of the two TFTs to be deposited therein and in contact with the two semiconductor portions.
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公开(公告)号：US09728560B2
公开(公告)日：2017-08-08
申请号：US15393690
申请日：2016-12-29
发明人： Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L27/32 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1229 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/78663 , H01L29/78669 , H01L29/78672 , H01L29/78678 , H01L29/7869
摘要： The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.
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公开(公告)号：US09716119B2
公开(公告)日：2017-07-25
申请号：US14770091
申请日：2015-05-25
发明人： Wenhui Li
IPC分类号： H01L27/12 , H01L29/786 , H01L29/49
CPC分类号： H01L27/1288 , H01L27/1222 , H01L27/1225 , H01L27/127 , H01L29/4908 , H01L29/66969 , H01L29/78648 , H01L29/78663 , H01L29/78672 , H01L29/7869
摘要： Disclosed are a manufacturing method of a dual gate TFT substrate and a structure thereof. The manufacturing method of a dual gate TFT substrate includes sequentially manufacturing a bottom gate, a first isolation layer, an island shaped semiconductor layer, and a second isolation layer on a substrate; then, depositing a second metal layer, and implementing a patterning process to the second metal layer with one mask to form a source, a drain and a top gate at the same time; and then, sequentially manufacturing a third isolation layer and a pixel electrode. It can promote the stability of the TFT, reduce the amount of the masks, and shorten the process flow, simplifying the manufacture process and diminishing the production cost. In the structure of the dual gate TFT substrate, the structure is simple, and the stability of the TFT is better, and easy to manufacture.
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公开(公告)号：US09705008B2
公开(公告)日：2017-07-11
申请号：US14426152
申请日：2014-09-19
发明人： Wenhui Li
IPC分类号： H01L21/00 , H01L29/786 , H01L21/77 , H01L27/12 , H01L29/417 , H01L29/45 , H01L29/66 , H01L21/3213 , H01L29/40
CPC分类号： H01L29/78696 , H01L21/32133 , H01L21/77 , H01L27/12 , H01L29/401 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/786 , H01L29/78618 , H01L29/7869
摘要： The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor layer is transparent so as to help increase aperture ratio.
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公开(公告)号：US09704887B2
公开(公告)日：2017-07-11
申请号：US15394424
申请日：2016-12-29
发明人： Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1229 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/78663 , H01L29/78669 , H01L29/78672 , H01L29/78678 , H01L29/7869
摘要： The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.
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公开(公告)号：US09634032B2
公开(公告)日：2017-04-25
申请号：US14763822
申请日：2015-05-21
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/44 , H01L27/12 , H01L21/02 , H01L21/027 , H01L21/467 , H01L29/24 , H01L29/45 , H01L29/49 , H01L29/51 , H01L29/66 , H01L29/786 , H01L51/52 , H01L27/32
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/02631 , H01L21/0274 , H01L21/467 , H01L21/47635 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/495 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L51/5206 , H01L2227/323
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (53′) with ion doping process; the method implements the patterning process to the bottom gate isolation layer (31) and the top gate isolation layer (32) at the same time with one photo process; the method manufactures the first top gate (71), the first source (81), the first drain (82), the second top gate (72), the second source (83), the second drain (84) at the same time with one photo process; the method implements patterning process to the flat layer (9), the passivation layer (8) and the top gate isolation layer (32) at the same time with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
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公开(公告)号：US09559337B2
公开(公告)日：2017-01-31
申请号：US14761307
申请日：2015-05-21
发明人： Wenhui Li
CPC分类号： H01L51/56 , H01L51/003 , H01L51/0097 , H01L2251/5338 , Y02E10/549
摘要： The present invention provides a method for manufacturing a flexible display device, which includes the following steps: (1) providing a flexible substrate and a number of clamps; (2) securing edges of the flexible substrate with the number of clamps; and (3) subjecting the flexible substrate to operations of exposure, development, etching, thin film deposition, annealing, and film formation, wherein in each of the operations, the clamps are adjusted in order to adjust flatness and amount of contraction of the flexible substrate and also, the clamps are adjusted to adjust angle of the flexible substrate. The present invention uses the clamps to securely clamp edges of the flexible substrate so that adjustment of the clamps may be conducted in case that deformation and deflection of the flexible substrate occurs in order to reduce the deformation and deflection of the flexible substrate and achieve precise control of accuracy of the manufacturing process thereby preventing the deformation and deflection from affecting the accuracy of the manufacturing process. In different operations, the flexible substrate can be adjusted to be horizontal, inclined, or vertical and the clamps may apply different amounts of forces to control the accuracy and reduce deformation of the substrate. No operations of laminating and peeling are necessary.
摘要翻译： 本发明提供一种制造柔性显示装置的方法，其包括以下步骤：（1）提供柔性基板和多个夹具; （2）用多个夹具固定柔性基板的边缘; 和（3）对柔性基板进行曝光，显影，蚀刻，薄膜沉积，退火和成膜的操作，其中在每个操作中调节夹具以调节柔性基板的平整度和收缩量 衬底，并且还调整夹具以调节柔性衬底的角度。 本发明使用夹具可靠地夹紧柔性基板的边缘，使得可以在发生柔性基板的变形和挠曲的情况下进行夹具的调节，以便减少柔性基板的变形和挠曲并实现精确的控制 的制造过程的精度，从而防止变形和偏转影响制造过程的精度。 在不同的操作中，可以将柔性基底调节为水平的，倾斜的或垂直的，并且夹具可以施加不同的力来控制基底的精度和减小变形。 无需层压和剥离操作。
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10.发明授权Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof 有权双栅氧化半导体TFT基板的制造方法及其结构公开(公告)号：US09543442B2
公开(公告)日：2017-01-10
申请号：US14763823
申请日：2015-05-21
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L29/49 , G02F1/1343 , G02F1/1368 , G02F1/1333
CPC分类号： H01L27/1225 , G02F1/13439 , G02F1/1368 , G02F2001/133302 , G02F2001/136231 , G02F2201/123 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/24 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
摘要翻译： 本发明提供氧化物半导体TFT基板的制造方法及其结构。 双栅极氧化物半导体TFT基板的制造方法利用半色调掩模来实现一种光刻工艺，其不仅可以实现对氧化物半导体层的图案化，而且还可以通过离子掺杂工艺获得氧化物导体层（52'），并且 氧化物导体层（52'）用作LCD的像素电极以替代现有技术中的ITO像素电极; 该方法通过一次照相处理同时制造源（81），漏极（82）和顶栅（71）; 该方法与一个照相工艺一起对钝化层（8）和顶栅隔离层（32）进行图案化处理，以将照相工艺的数量减少到五个，以缩短制造程序，提高生产效率和降低 生产成本。
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