公开(公告)号：US20230307398A1

公开(公告)日：2023-09-28

申请号：US17704341

申请日：2022-03-25

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Huang ,  Sungjin Kim ,  Paul L. Bereznycky ,  Michael J. Evans ,  De Hsin Chang ,  Wei Zhang

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L24/16 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/81201

Abstract: A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.

公开(公告)号：US11495631B2

公开(公告)日：2022-11-08

申请号：US16785098

申请日：2020-02-07

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Huang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  John Liobe ,  Wei Zhang

IPC: H01L27/146

Abstract: A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

公开(公告)号：US20200312900A1

公开(公告)日：2020-10-01

申请号：US16902318

申请日：2020-06-16

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

IPC: H01L27/146 ,  H01L23/00 ,  H01L25/16

Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

公开(公告)号：US10727267B2

公开(公告)日：2020-07-28

申请号：US16129402

申请日：2018-09-12

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

IPC: H01L27/146 ,  H01L25/16 ,  H01L23/488 ,  H01L23/00

Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

公开(公告)号：US20200083272A1

公开(公告)日：2020-03-12

申请号：US16129402

申请日：2018-09-12

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

IPC: H01L27/146 ,  H01L23/00

Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

公开(公告)号：US10566371B2

公开(公告)日：2020-02-18

申请号：US16126314

申请日：2018-09-10

Applicant: Sensors Unlimited, Inc.

Inventor： Namwoong Paik ,  Wei Huang

IPC: H01L23/48 ,  H01L27/146 ,  H01L23/00

Abstract: A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.

公开(公告)号：US10468437B2

公开(公告)日：2019-11-05

申请号：US15935080

申请日：2018-03-26

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Huang ,  Wei Zhang ,  Joshua Lund ,  Namwoong Paik

IPC: H01L21/02 ,  H01L27/144 ,  H01L31/109 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0216 ,  H01L31/18

Abstract: A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

公开(公告)号：US20180102391A1

公开(公告)日：2018-04-12

申请号：US15289627

申请日：2016-10-10

Applicant: Sensors Unlimited, Inc.

Inventor： Namwoong Paik ,  Wei Huang

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L27/14605 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469 ,  H01L2224/034 ,  H01L2224/03622 ,  H01L2224/03912 ,  H01L2224/05571 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/119 ,  H01L2224/13007 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.

公开(公告)号：US20170125465A1

公开(公告)日：2017-05-04

申请号：US14931569

申请日：2015-11-03

Applicant: Sensors Unlimited, Inc.

Inventor： Prabhu Mushini ,  Wei Huang

IPC: H01L27/146 ,  H01L31/102 ,  H01L31/0216

Abstract: A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

公开(公告)号：US11251219B2

公开(公告)日：2022-02-15

申请号：US16814179

申请日：2020-03-10

Applicant: Sensors Unlimited, Inc.

Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  John Liobe ,  Michael J. Evans ,  Wei Huang

IPC: H01L27/146 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

Abstract: A system includes a pixel having a diffusion layer within a cap layer. The diffusion layer defines a front side and an illumination side opposite the front side with an absorption layer operatively connected to the illumination side as well as the diffusion and cap layers. A set of alternating oxide and nitride layers are deposited on the front side of the cap and diffusion layers.