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    MESA TRENCH ETCH WITH STACKED SIDEWALL PASSIVATION
    2.
    发明申请
    MESA TRENCH ETCH WITH STACKED SIDEWALL PASSIVATION 审中-公开

    公开(公告)号：US20200052012A1

    公开(公告)日：2020-02-13

    申请号：US16057191

    申请日：2018-08-07

    申请人： Sensors Unlimited, Inc.

    发明人： Wei Zhang ,  Michael J. Evans ,  Douglas Stewart Malchow ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC分类号： H01L27/146

    摘要： A method of forming an array of photodiodes includes forming a cap layer on a surface of an absorption layer. The method includes forming a plurality of spaced apart pixel diffusion areas in the cap layer. The method includes forming a mesa trench with opposed sidewalls through the cap layer, wherein the mesa trench surrounds each of the pixel diffusion areas separating the pixel diffusion areas from one another. The method includes forming a sidewall passivation layer over the sidewalls of the mesa trench and removing a portion of the sidewall passivation layer to expose a respective contact electrically connected to each of the pixel diffusion areas, but leaving the sidewalls of the mesa trench covered with the sidewall passivation layer wherein the contact is open and uncovered for electrical connection.

    Pin diodes with over-current protection
    4.
    发明授权
    Pin diodes with over-current protection 有权

    公开(公告)号：US11251210B2

    公开(公告)日：2022-02-15

    申请号：US16785065

    申请日：2020-02-07

    申请人： Sensors Unlimited, Inc.

    发明人： Wei Huang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  John Liobe ,  Wei Zhang

    IPC分类号： H01L27/146

    摘要： A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

    Interconnect bump structures for photo detectors
    6.
    发明授权
    Interconnect bump structures for photo detectors 有权

    公开(公告)号：US10957733B2

    公开(公告)日：2021-03-23

    申请号：US16902318

    申请日：2020-06-16

    申请人： Sensors Unlimited, Inc.

    发明人： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC分类号： H01L27/146 ,  H01L25/16 ,  H01L23/00

    摘要： A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.