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    Interconnect bump structures for photo detectors
    1.
    发明授权
    Interconnect bump structures for photo detectors 有权

    公开(公告)号：US10957733B2

    公开(公告)日：2021-03-23

    申请号：US16902318

    申请日：2020-06-16

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC: H01L27/146 ,  H01L25/16 ,  H01L23/00

    Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

    Bump structures for interconnecting focal plane arrays
    4.
    发明授权
    Bump structures for interconnecting focal plane arrays 有权

    公开(公告)号：US10096639B2

    公开(公告)日：2018-10-09

    申请号：US15289627

    申请日：2016-10-10

    Applicant: Sensors Unlimited, Inc.

    Inventor： Namwoong Paik ,  Wei Huang

    IPC: H01L23/48 ,  H01L27/146 ,  H01L23/00

    Abstract: A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.

    BUMP STRUCTURES FOR HIGH DENSITY FLIP CHIP INTERCONNECTION
    5.
    发明申请
    BUMP STRUCTURES FOR HIGH DENSITY FLIP CHIP INTERCONNECTION 审中-公开

    公开(公告)号：US20200227370A1

    公开(公告)日：2020-07-16

    申请号：US16838322

    申请日：2020-04-02

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Zhang ,  Wei Huang ,  Joshua Lund ,  Namwoong Paik

    IPC: H01L23/00 ,  H01L21/48 ,  H01L23/13 ,  H01L27/146 ,  H01L23/498

    Abstract: A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.

    MESA TRENCH ETCH WITH STACKED SIDEWALL PASSIVATION
    6.
    发明申请
    MESA TRENCH ETCH WITH STACKED SIDEWALL PASSIVATION 审中-公开

    公开(公告)号：US20200052012A1

    公开(公告)日：2020-02-13

    申请号：US16057191

    申请日：2018-08-07

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Zhang ,  Michael J. Evans ,  Douglas Stewart Malchow ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC: H01L27/146

    Abstract: A method of forming an array of photodiodes includes forming a cap layer on a surface of an absorption layer. The method includes forming a plurality of spaced apart pixel diffusion areas in the cap layer. The method includes forming a mesa trench with opposed sidewalls through the cap layer, wherein the mesa trench surrounds each of the pixel diffusion areas separating the pixel diffusion areas from one another. The method includes forming a sidewall passivation layer over the sidewalls of the mesa trench and removing a portion of the sidewall passivation layer to expose a respective contact electrically connected to each of the pixel diffusion areas, but leaving the sidewalls of the mesa trench covered with the sidewall passivation layer wherein the contact is open and uncovered for electrical connection.

    MESAS AND IMPLANTS IN TWO-DIMENSIONAL ARRAYS
    7.
    发明申请
    MESAS AND IMPLANTS IN TWO-DIMENSIONAL ARRAYS 审中-公开

    公开(公告)号：US20190296058A1

    公开(公告)日：2019-09-26

    申请号：US15935080

    申请日：2018-03-26

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Huang ,  Wei Zhang ,  Joshua Lund ,  Namwoong Paik

    IPC: H01L27/144 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0352

    Abstract: A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

    INTERCONNECT BUMP STRUCTURES FOR PHOTO DETECTORS
    8.
    发明申请
    INTERCONNECT BUMP STRUCTURES FOR PHOTO DETECTORS 审中-公开

    公开(公告)号：US20200312900A1

    公开(公告)日：2020-10-01

    申请号：US16902318

    申请日：2020-06-16

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC: H01L27/146 ,  H01L23/00 ,  H01L25/16

    Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

    Interconnect bump structures for photo detectors
    9.
    发明授权
    Interconnect bump structures for photo detectors 有权

    公开(公告)号：US10727267B2

    公开(公告)日：2020-07-28

    申请号：US16129402

    申请日：2018-09-12

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC: H01L27/146 ,  H01L25/16 ,  H01L23/488 ,  H01L23/00

    Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

    INTERCONNECT BUMP STRUCTURES FOR PHOTO DETECTORS
    10.
    发明申请
    INTERCONNECT BUMP STRUCTURES FOR PHOTO DETECTORS 审中-公开

    公开(公告)号：US20200083272A1

    公开(公告)日：2020-03-12

    申请号：US16129402

    申请日：2018-09-12

    Applicant: Sensors Unlimited, Inc.

    Inventor： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

    IPC: H01L27/146 ,  H01L23/00

    Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

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