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    SEMICONDUCTOR DISPLAY DEVICE
    3.
    发明申请
    SEMICONDUCTOR DISPLAY DEVICE 有权

    公开(公告)号：US20130221361A1

    公开(公告)日：2013-08-29

    申请号：US13857659

    申请日：2013-04-05

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei YAMAZAKI ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

    IPC分类号： H01L33/52

    CPC分类号： H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

    摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

    Display device
    6.
    发明授权
    Display device 有权

    公开(公告)号：US10133139B2

    公开(公告)日：2018-11-20

    申请号：US14511197

    申请日：2014-10-10

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

    IPC分类号： G02F1/1368 ,  H01L27/32 ,  H01L51/52 ,  H05B33/04 ,  G02F1/1333 ,  G02F1/1362

    摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光装置及其制造方法

    公开(公告)号：US20150008439A1

    公开(公告)日：2015-01-08

    申请号：US14333078

    申请日：2014-07-16

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

    IPC分类号： H01L27/32 ,  H01L29/16 ,  H01L29/786

    摘要： The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

    摘要翻译： 包括薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，第三无机绝缘层上的阳极，与第三有机绝缘层重叠的第二有机绝缘层 所述阳极的端部具有35度至45度的倾斜角度，在所述第二有机绝缘层的上表面和所述侧表面上的第四无机绝缘层，并且在所述阳极上具有开口，与所述阳极接触的有机化合物层 和第四无机绝缘层并含有发光材料，以及与有机化合物层接触的阴极，其中第三和第四无机绝缘层包括氮化硅或氮化铝。

    Display device
    9.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US08748895B2

    公开(公告)日：2014-06-10

    申请号：US13922920

    申请日：2013-06-20

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

    IPC分类号： H01L27/12

    CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

    摘要： Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.

    摘要翻译： 公开了一种结合了显示装置的显示装置和电子装置。 显示装置包括晶体管和晶体管上的平坦化膜。 平坦化膜具有边缘部分为圆形的开口。 显示装置还包括在平坦化膜上的第一电极和在第一电极上的有机树脂膜。 有机树脂膜也具有边缘部分为圆形的开口。 有机树脂膜位于平坦化膜的开口内。 第一电极和晶体管通过导电膜彼此电连接。 第一电极与导电膜的顶表面接触。 在第一电极上设置有发光部件和第二电极。

    Method of fabricating display device
    10.
    发明授权
    Method of fabricating display device 有权
    制造显示装置的方法

    公开(公告)号：US08709847B2

    公开(公告)日：2014-04-29

    申请号：US13755614

    申请日：2013-01-31

    申请人： Semiconductor Energy Laboratory Co., LTD.

    发明人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

    IPC分类号： H01L21/00

    CPC分类号： H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

    摘要翻译： 为了实现显示装置的操作功能的稳定性和电路设计中的设计余量的增加，在包括具有半导体元件的像素部分和设置有与基板上的半导体元件连接的像素电极的多个像素的显示装置中， 半导体元件包括作为层间绝缘膜的光敏有机树脂膜，设置在感光性有机树脂膜上的第一开口部的内壁面被第二绝缘氮化物膜覆盖，设置在无机绝缘膜上的第二开口部 设置在第一开口部的内侧，半导体和布线通过第一开口部和第二开口部连接，并且像素电极设置在活化层的下侧的层。