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公开(公告)号：US09666720B2
公开(公告)日：2017-05-30
申请号：US14269819
申请日：2014-05-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/7869 , H01L29/66969 , H01L29/78603 , H01L29/78606
Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
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公开(公告)号：US08987068B2
公开(公告)日：2015-03-24
申请号：US14080822
申请日：2013-11-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
IPC: H01L29/04 , H01L33/08 , G02F1/1368 , H01L21/768 , H01L27/12 , H01L29/66 , G02F1/1362
CPC classification number: H01L33/08 , G02F1/1368 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66765 , H01L2924/0002 , Y10T428/24421 , H01L2924/00
Abstract: At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.
Abstract translation: 通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案 显示设备。 使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。
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公开(公告)号：US09287343B2
公开(公告)日：2016-03-15
申请号：US14608802
申请日：2015-01-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Keitaro Imai , Aya Anzai , Yasuko Watanabe
CPC classification number: H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
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Patent Agency Ranking
公开(公告)号：US08946988B2
公开(公告)日：2015-02-03
申请号：US14293369
申请日：2014-06-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Keitaro Imai , Aya Anzai , Yasuko Watanabe
CPC classification number: H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
Abstract translation: 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。
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公开(公告)号：US10522689B2
公开(公告)日：2019-12-31
申请号：US15605211
申请日：2017-05-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC: H01L29/786 , H01L29/66
Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
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公开(公告)号：US20140306224A1
公开(公告)日：2014-10-16
申请号：US14293369
申请日：2014-06-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Keitaro Imai , Aya Anzai , Yasuko Watanabe
CPC classification number: H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
Abstract translation: 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。
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公开(公告)号：US10720433B2
公开(公告)日：2020-07-21
申请号：US15728797
申请日：2017-10-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Keitaro Imai , Jun Koyama
IPC: H01L27/108 , G11C11/404 , G11C11/405 , G11C16/02 , H01L21/8258 , H01L27/06 , H01L27/088 , H01L27/105 , H01L27/1156 , H01L27/12 , H01L29/786 , H01L27/092
Abstract: The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
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公开(公告)号：US09806079B2
公开(公告)日：2017-10-31
申请号：US14950624
申请日：2015-11-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Keitaro Imai , Jun Koyama
IPC: H01L29/10 , H01L27/108 , G11C11/404 , G11C11/405 , G11C16/02 , H01L21/8258 , H01L27/06 , H01L27/088 , H01L27/105 , H01L27/1156 , H01L27/12 , H01L29/786 , H01L27/092
CPC classification number: H01L27/10802 , G11C11/404 , G11C11/405 , G11C16/02 , H01L21/8258 , H01L27/0688 , H01L27/088 , H01L27/0922 , H01L27/105 , H01L27/1156 , H01L27/12 , H01L27/1225 , H01L29/7869
Abstract: The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
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