公开(公告)号：US09214559B2

公开(公告)日：2015-12-15

申请号：US13659131

申请日：2012-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Chang-seung Lee ,  Yong-sung Kim ,  Hyun-jae Song

IPC: B29C65/52 ,  B29C65/54 ,  B32B37/26 ,  B32B38/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/16

CPC classification number: H01L29/78603 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/24917

Abstract: Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.

Abstract translation: 石墨烯转移剂，石墨烯转移剂，转移石墨烯的方法以及制造石墨烯装置的方法可以包括金属薄膜层图案和依次层叠在粘合剂构件上的石墨烯层。 金属薄膜层和石墨烯层可以具有相同的形状。 在制造石墨烯装置期间将石墨烯层转印到转印对象基板上之后，通过去除金属薄膜层的一部分，对金属薄膜层进行图案化以在石墨烯层的各个端部上形成电极。

公开(公告)号：US20150318350A1

公开(公告)日：2015-11-05

申请号：US14750027

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-ho Shin ,  Yong-sung Kim ,  Tae-young Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L21/28123 ,  H01L21/76224 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

公开(公告)号：US09966267B2

公开(公告)日：2018-05-08

申请号：US15292884

申请日：2016-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-ho Shin ,  Yong-sung Kim ,  Tae-young Chung

IPC: H01L29/78 ,  H01L21/28 ,  H01L27/088 ,  H01L29/66 ,  H01L29/06 ,  H01L21/762 ,  H01L29/423 ,  H01L27/108

CPC classification number: H01L21/28123 ,  H01L21/76224 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

公开(公告)号：US09540234B2

公开(公告)日：2017-01-10

申请号：US13855991

申请日：2013-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Jeo-young Shim ,  Joo-ho Lee

IPC: G01N33/487 ,  B82Y15/00 ,  B82Y99/00

CPC classification number: B82Y15/00 ,  B82Y99/00 ,  G01N33/48721

Abstract: A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.

Abstract translation: 可以包括其中形成有纳米孔的第一绝缘层的纳米隙装置，可以在第一绝缘层上的第一沟道层，可以分别与第一绝缘层的第二绝缘层 沟道层，可以覆盖第一沟道层的第二绝缘层，第一源电极和第一漏电极，以及可以在第二绝缘层上并且可以被纳米隙分成两部分的第一纳米隙电极， 其面对纳米孔，介于两部分之间。

公开(公告)号：US09496336B2

公开(公告)日：2016-11-15

申请号：US14750027

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-ho Shin ,  Yong-sung Kim ,  Tae-young Chung

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L21/28123 ,  H01L21/76224 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

公开(公告)号：US09196478B2

公开(公告)日：2015-11-24

申请号：US14268053

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-sung Kim ,  Chang-youl Moon ,  Sung-hee Lee ,  Chang-seung Lee

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L21/20

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/2007 ,  H01L29/1606 ,  H01L29/66015

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract translation: 石墨烯转移方法，使用其的器件制造方法和包括石墨烯的衬底结构包括在第一衬底上形成催化剂层，在催化剂层上形成石墨烯层，在石墨烯层上形成保护金属层， 将保护金属层，石墨烯层和催化剂层保留在支撑体上，从支撑体除去催化剂层，将保护金属层和保护金属层转移到保护金属层， 石墨烯层从支撑体到第二基底。

公开(公告)号：US08932941B2

公开(公告)日：2015-01-13

申请号：US13856022

申请日：2013-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Tae-han Jeon ,  Yong-sung Kim ,  Chang-seung Lee ,  Yong-seok Jung

IPC: H01L21/20 ,  H01L21/36 ,  H01L29/16 ,  H01L21/02 ,  B82Y40/00

CPC classification number: H01L29/1606 ,  B82Y40/00 ,  H01L21/02527 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78684 ,  Y10S977/734

Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

Abstract translation: 制造石墨烯装置的方法包括在基板上形成绝缘材料层，在彼此间隔开的绝缘材料层上形成第一和第二金属焊盘，形成石墨烯层，该石墨烯层被定义为第一和第 在所述绝缘材料层上的第二金属焊盘，在所述石墨烯层上形成第三和第四金属焊盘，所述第二金属焊盘与所述第一金属焊盘和所述第二金属焊盘分别在所述第一金属焊盘和所述第二金属焊盘之上分别延伸， 形成第一保护层以覆盖所有第一和第二金属焊盘，石墨烯层以及第三和第四金属焊盘，并且蚀刻第一保护层的整个表面，直到仅由形成第一和第二金属焊盘的材料制成的残留层 保护层保留在有效区域上。

公开(公告)号：US08877572B2

公开(公告)日：2014-11-04

申请号：US13790534

申请日：2013-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-seok Jung ,  Yong-sung Kim ,  Chang-seung Lee ,  Chang-youl Moon

IPC: H01L29/66 ,  C25D17/00 ,  C01B31/02 ,  C25B9/00 ,  C25F7/00 ,  C25B1/00 ,  C25F5/00 ,  B82Y40/00

CPC classification number: H01L29/66045 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/186 ,  C25B1/00 ,  C25B9/00 ,  C25D17/00 ,  C25F5/00 ,  C25F7/00

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract translation: 石墨烯装置制造装置包括电极，在基板上形成有金属催化剂层的石墨烯结构，保护层和保护层与金属催化剂层之间的石墨烯层，功率单元，被配置为在保护层和金属催化剂层之间施加电压 电极和金属催化剂层，以及其中石墨烯结构至少部分浸没的电解质。

公开(公告)号：US09142639B2

公开(公告)日：2015-09-22

申请号：US13975680

申请日：2013-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-sung Kim ,  Chang-seung Lee ,  Joo-ho Lee

IPC: H01L29/16 ,  H01L29/66 ,  B82Y10/00 ,  H01L21/28 ,  H01L29/423 ,  H01L29/778 ,  H01L29/788 ,  H01L27/115 ,  H01L29/78

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28291 ,  H01L21/6835 ,  H01L27/11521 ,  H01L27/1159 ,  H01L29/1606 ,  H01L29/41775 ,  H01L29/42328 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78391 ,  H01L29/7881 ,  H01L2221/68359 ,  H01L2221/68381

Abstract: A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.

Abstract translation: 石墨烯电子器件包括：在中间层的第一区域上的第一导电层和半导体层; 在所述中间层的第二区域上的第二导电层; 中间层上的石墨烯层，半导体层和第二导电层; 以及石墨烯层上的第一栅极结构和第二栅极结构。

公开(公告)号：US09056424B2

公开(公告)日：2015-06-16

申请号：US13918066

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Jeong-yub Lee ,  Chang-youl Moon ,  Yong-young Park ,  Woo-young Yang ,  Yong-sung Kim ,  Joo-ho Lee

IPC: B44C1/17 ,  B29C65/16 ,  B32B37/26 ,  B32B38/10 ,  B32B43/00 ,  B29C67/24 ,  H01L51/00 ,  H01L51/10 ,  H01L51/44

CPC classification number: B29C67/24 ,  H01L51/0023 ,  H01L51/0045 ,  H01L51/102 ,  H01L51/442 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract translation: 转移石墨烯的方法包括在第一基板上顺序地形成牺牲层和石墨烯层，将石墨烯层粘合到目标层，以及使用激光去除牺牲层并将第一基板与石墨烯层分离。