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    Transistors and methods of manufacturing the same
    2.
    发明授权
    Transistors and methods of manufacturing the same 有权
    晶体管及其制造方法

    公开(公告)号：US09040958B2

    公开(公告)日：2015-05-26

    申请号：US13792525

    申请日：2013-03-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Joo-ho Lee ,  Yong-seok Jung

    IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/1606 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

    Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

    Abstract translation: 晶体管和制造晶体管的方法包括石墨烯和从石墨烯转化的材料。 晶体管可以包括包括石墨烯的沟道层和包括从石墨烯转换的材料的栅极绝缘层。 从石墨烯转化的材料可以是氟化石墨烯。 沟道层可以包括图案化的石墨烯区域。 图案化的石墨烯区域可以由从石墨烯转换的区域限定。 晶体管的栅极可以包括石墨烯。

    Graphene device and method of fabricating the same
    3.
    发明授权
    Graphene device and method of fabricating the same 有权
    石墨烯装置及其制造方法

    公开(公告)号：US08932941B2

    公开(公告)日：2015-01-13

    申请号：US13856022

    申请日：2013-04-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joo-ho Lee ,  Tae-han Jeon ,  Yong-sung Kim ,  Chang-seung Lee ,  Yong-seok Jung

    IPC: H01L21/20 ,  H01L21/36 ,  H01L29/16 ,  H01L21/02 ,  B82Y40/00

    CPC classification number: H01L29/1606 ,  B82Y40/00 ,  H01L21/02527 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78684 ,  Y10S977/734

    Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

    Abstract translation: 制造石墨烯装置的方法包括在基板上形成绝缘材料层，在彼此间隔开的绝缘材料层上形成第一和第二金属焊盘，形成石墨烯层，该石墨烯层被定义为第一和第 在所述绝缘材料层上的第二金属焊盘，在所述石墨烯层上形成第三和第四金属焊盘，所述第二金属焊盘与所述第一金属焊盘和所述第二金属焊盘分别在所述第一金属焊盘和所述第二金属焊盘之上分别延伸， 形成第一保护层以覆盖所有第一和第二金属焊盘，石墨烯层以及第三和第四金属焊盘，并且蚀刻第一保护层的整个表面，直到仅由形成第一和第二金属焊盘的材料制成的残留层 保护层保留在有效区域上。

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