公开(公告)号：US09293180B2

公开(公告)日：2016-03-22

申请号：US14290236

申请日：2014-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-chul Jeong ,  Sung-hee Lee ,  Dae-sin Kim ,  Seung-hwan Kim ,  Dae-sun Kim ,  Sua Kim ,  Dong-soo Woo ,  Na-ra Kim

IPC: G11C11/4074 ,  G11C8/08 ,  G11C8/18 ,  G11C11/408 ,  G11C29/04

CPC classification number: G11C8/08 ,  G11C8/18 ,  G11C11/4085 ,  G11C2029/0411 ,  G11C2207/2227

Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.

Abstract translation: 存储器件包括：存储单元阵列，包括彼此相邻的第一和第二字线，连接到第一字线的第一存储器单元和连接到第二字线并位于第一存储器附近的第二存储器单元 细胞; 以及字线电压提供单元，其响应于第一控制信号将第一字线的字线电压从第一字线电压转换到第二字线电压。 转移控制单元产生用于在从第一字线电压到第二字线电压的转变周期中控制第一字线的字线电压的脉冲的第一控制信号，使得来自 与第二字线电压的第一字线电压与从第二字线电压到第一字线电压的转换波形分布不同。

公开(公告)号：US20020080212A1

公开(公告)日：2002-06-27

申请号：US09426644

申请日：1999-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho MOON ,  Jong-Chun KIM ,  Sung-hee Lee

IPC: B41J002/05 ,  H05B003/00

CPC classification number: B41J2/1631 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1645 ,  B41J2/1646 ,  Y10T29/49083 ,  Y10T29/49401 ,  Y10T29/49798 ,  Y10T156/1052

Abstract: Abstract of DisclosureA manufacturing process of a plurality of fluid jetting apparatuses in a print head adapted to an output unit. The process forms a heat driving part, a membrane and a nozzle part, respectively, and then adheres them sequentially. The fluid jetting apparatuses are completed as a wafer unit by forming the nozzle part using a spinning process. The manufacturing process of the nozzle part includes a first step of forming a nozzle plate on a substrate of a wafer by the spinning process; a second step of forming jetting fluid barriers on the nozzle plate by the spinning process; a third step of forming jetting fluid chambers in the jetting fluid barriers; a fourth step of forming nozzles in the nozzle plate; and a fifth step of separating the substrate from the nozzle plate. The fifth step is accomplished after the nozzle part and the membrane are adhered to each other. The third step is accomplished by a process of wet etching, and the fourth step is accomplished by a treating apparatus of a laser beam or by a process of reactive ion etching. Since the nozzle part is formed on the silicon wafer by means of the spinning process, it is capable of adhering to the membrane in a wafer type. Accordingly, the fluid jetting apparatuses are completed as the wafer type all at once. Furthermore, since the manufacturing time of the jetting fluid apparatuses is reduced, productivity is improved.

Abstract translation: 摘要公开适用于输出单元的打印头中的多个流体喷射装置的制造过程。 该过程分别形成热驱动部分，膜和喷嘴部分，然后依次粘合。 流体喷射装置通过使用纺丝方法形成喷嘴部分而完成为晶片单元。 喷嘴部的制造工序包括通过纺丝工序在晶片的基板上形成喷嘴板的第一工序; 通过纺丝工艺在喷嘴板上形成喷射流体屏障的第二步骤; 在喷射流体屏障中形成喷射流体室的第三步骤; 在喷嘴板上形成喷嘴的第四步骤; 以及从喷嘴板分离基板的第五步骤。 在喷嘴部分和膜彼此粘附之后实现第五步。 第三步骤是通过湿式蚀刻方法实现的，第四步是通过激光束的处理装置或反应离子蚀刻工艺完成。 由于通过纺丝工艺在硅晶片上形成喷嘴部分，所以能够以晶片类型粘附在膜上。 因此，流体喷射装置一次完成为晶片类型。 此外，由于喷射流体设备的制造时间降低，生产率提高。

公开(公告)号：US09660091B2

公开(公告)日：2017-05-23

申请号：US14453137

申请日：2014-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su Kim ,  Myung-kwan Ryu ,  Kyoung-seok Son ,  Sung-hee Lee

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  G09G3/36 ,  H01L29/49

CPC classification number: H01L29/78648 ,  G02F1/1368 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0426 ,  H01L29/4908 ,  H01L29/78645

Abstract: A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

公开(公告)号：US09196478B2

公开(公告)日：2015-11-24

申请号：US14268053

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-sung Kim ,  Chang-youl Moon ,  Sung-hee Lee ,  Chang-seung Lee

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L21/20

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/2007 ,  H01L29/1606 ,  H01L29/66015

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract translation: 石墨烯转移方法，使用其的器件制造方法和包括石墨烯的衬底结构包括在第一衬底上形成催化剂层，在催化剂层上形成石墨烯层，在石墨烯层上形成保护金属层， 将保护金属层，石墨烯层和催化剂层保留在支撑体上，从支撑体除去催化剂层，将保护金属层和保护金属层转移到保护金属层， 石墨烯层从支撑体到第二基底。

公开(公告)号：US20140362637A1

公开(公告)日：2014-12-11

申请号：US14290236

申请日：2014-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-chul Jeong ,  Sung-hee Lee ,  Dae-sin Kim ,  Seung-hwan Kim ,  Dae-sun Kim ,  Sua Kim ,  Dong-soo Woo ,  Na-ra Kim

IPC: G11C11/4074

CPC classification number: G11C8/08 ,  G11C8/18 ,  G11C11/4085 ,  G11C2029/0411 ,  G11C2207/2227

Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.

Abstract translation: 存储器件包括：存储单元阵列，包括彼此相邻的第一和第二字线，连接到第一字线的第一存储器单元和连接到第二字线并位于第一存储器附近的第二存储器单元 细胞; 以及字线电压提供单元，其响应于第一控制信号将第一字线的字线电压从第一字线电压转换到第二字线电压。 转移控制单元产生用于在从第一字线电压到第二字线电压的转变周期中控制第一字线的字线电压的脉冲的第一控制信号，使得来自 与第二字线电压的第一字线电压与从第二字线电压到第一字线电压的转换波形分布不同。