公开(公告)号：US09312391B2

公开(公告)日：2016-04-12

申请号：US14043324

申请日：2013-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-baek Seon ,  Myung-kwan Ryu ,  Sang-yoon Lee

IPC: H01B1/06 ,  H01B1/08 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01B1/06 ,  H01B1/08 ,  H01L29/78693

Abstract: A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.

Abstract translation: 用于形成氧化物半导体的溶液组合物包括金属氧化物前体和硫代乙酸金属及其衍生物之一。

公开(公告)号：US09076721B2

公开(公告)日：2015-07-07

申请号：US13770007

申请日：2013-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-seok Park ,  Sun-jae Kim ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Abstract translation: 晶体管包括沟道层，其包括掺杂有铪（Hf）和锆（Zr）中的至少一种的氧氮化物半导体，沟道层的一个侧部上的源极和沟道层的另一个侧部的漏极，栅极 对应于沟道层，以及沟道层和栅极之间的栅极绝缘层。

公开(公告)号：US08698159B2

公开(公告)日：2014-04-15

申请号：US13621531

申请日：2012-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae Park ,  Myung-kwan Ryu ,  Kee-chan Park ,  Jong-baek Seon

IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/1288 ,  H01L27/12 ,  H01L27/124 ,  H01L29/7869

Abstract: A panel structure includes a transistor including a gate electrode, a source electrode and a drain electrode, a power source line, a pixel electrode, and one or more contact plugs formed of a same material as the pixel electrode and electrically connecting the power source line and the source electrode.

Abstract translation: 面板结构包括：晶体管，包括栅电极，源电极和漏电极，电源线，像素电极，以及由与像素电极相同的材料形成的一个或多个接触插塞，并将电源线 和源电极。

公开(公告)号：US09123750B2

公开(公告)日：2015-09-01

申请号：US14016599

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-seok Park ,  Sun-jae Kim ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract translation: 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

公开(公告)号：US09053979B2

公开(公告)日：2015-06-09

申请号：US13779355

申请日：2013-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Baek Seon ,  Myung-kwan Ryu ,  Kyung-Bae Park ,  Sang-yoon Lee ,  Bon-Won Koo

IPC: H01L29/10 ,  H01L29/12 ,  H01L31/18

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract translation: 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。

公开(公告)号：US08829515B2

公开(公告)日：2014-09-09

申请号：US13721635

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-baek Seon ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Seok-jun Seo ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L29/06 ,  H01L29/22 ,  H01L29/786 ,  H01L29/36

CPC classification number: H01L29/2206 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Abstract translation: 具有硫掺杂的氮氧化锌通道层的晶体管及其制造方法包括相对于约0.1at％至约1.2at％的锌含量的硫含量比的ZnON沟道层，源电极和漏极 分别形成在沟道层的第一区域和第二区域上的电极，对应于沟道层的栅电极以及沟道层和栅电极之间的栅极绝缘层。

公开(公告)号：US09245957B2

公开(公告)日：2016-01-26

申请号：US14093121

申请日：2013-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-sang Kim ,  Sun-jae Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son

IPC: H01L29/10 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

公开(公告)号：US09087907B2

公开(公告)日：2015-07-21

申请号：US14162873

申请日：2014-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-suk Kim ,  Sun-jae Kim ,  Tae-sang Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Kyoung-seok Son

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/78696

Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Abstract translation: 根据示例性实施例，薄膜晶体管（TFT）包括包括锌，氮和氧的沟道层; 沟道层上的蚀刻停止层; 源极和漏极分别接触沟道层的两端; 对应于沟道层的栅电极; 以及沟道层和栅电极之间的栅极绝缘层。 蚀刻停止层包括氟。 沟道层可以在栅电极上。

公开(公告)号：US09660091B2

公开(公告)日：2017-05-23

申请号：US14453137

申请日：2014-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su Kim ,  Myung-kwan Ryu ,  Kyoung-seok Son ,  Sung-hee Lee

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  G09G3/36 ,  H01L29/49

CPC classification number: H01L29/78648 ,  G02F1/1368 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0426 ,  H01L29/4908 ,  H01L29/78645

Abstract: A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

公开(公告)号：US09384973B2

公开(公告)日：2016-07-05

申请号：US14293187

申请日：2014-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-sang Kim ,  Jong-baek Seon ,  Myung-kwan Ryu ,  Chil Hee Chung

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02521 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.

Abstract translation: 提供半导体膜，其形成方法，包括半导体膜的晶体管以及制造晶体管的方法。 提供了包括锌（Zn），氮（N），氧（O）和氟（F））的半导体膜以及形成半导体膜的方法。 提供了包括锌，氮和氟的半导体膜，以及形成半导体膜的方法。 可以使用溅射，离子注入，等离子体处理，化学气相沉积（CVD）或溶液工艺来形成半导体膜。 可以通过使用锌靶和包括氟的反应性气体来进行溅射。 反应性气体可以包括氮和氟，或氮，氧和氟。