公开(公告)号：US08698159B2

公开(公告)日：2014-04-15

申请号：US13621531

申请日：2012-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae Park ,  Myung-kwan Ryu ,  Kee-chan Park ,  Jong-baek Seon

IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/1288 ,  H01L27/12 ,  H01L27/124 ,  H01L29/7869

Abstract: A panel structure includes a transistor including a gate electrode, a source electrode and a drain electrode, a power source line, a pixel electrode, and one or more contact plugs formed of a same material as the pixel electrode and electrically connecting the power source line and the source electrode.

Abstract translation: 面板结构包括：晶体管，包括栅电极，源电极和漏电极，电源线，像素电极，以及由与像素电极相同的材料形成的一个或多个接触插塞，并将电源线 和源电极。

公开(公告)号：US09899453B2

公开(公告)日：2018-02-20

申请号：US15012604

申请日：2016-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/12 ,  H01L23/58 ,  H01L33/08

CPC classification number: H01L27/307 ,  H01L23/585 ,  H01L27/1214 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14685 ,  H01L27/14687 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

公开(公告)号：US09548463B2

公开(公告)日：2017-01-17

申请号：US14587394

申请日：2014-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tadao Yagi ,  Rie Sakurai ,  Kyung-bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Xavier Bulliard ,  Chul Joon Heo ,  Yong Wan Jin

IPC: H01L51/00 ,  C07F7/08 ,  H01L27/30 ,  H01L51/44 ,  H01L51/42

CPC classification number: H01L51/0094 ,  C07F7/0834 ,  H01L27/301 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/008 ,  H01L51/4253 ,  H01L51/442 ,  H01L2251/308

Abstract: Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.

Abstract translation: 示例性实施方案涉及包括第一电极和彼此面对的第二电极的有机光电子器件，以及在第一电极和第二电极之间的有源层，其中活性层包括由以下化学式1表示的第一化合物和 包括有机光电子器件的图像传感器。