公开(公告)号：US10097976B2

公开(公告)日：2018-10-09

申请号：US14220331

申请日：2014-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-uk Woo ,  Kyu-sik Kim

IPC: G06F15/16 ,  H04W4/60 ,  H04L12/58 ,  H04L29/06

Abstract: An information processing apparatus includes a memory configured to store a plurality of applications, and processor configured to execute a platform which manages and controls the applications. The platform includes an event processing module configured to process a corresponding operation corresponding to an event generated in a first application from among the plurality of applications, wherein the operation is to be executed by a second application from among the plurality of applications, and a client module configured to connect to and communicate with a server communicating with a least one external device, wherein the client module transfers the event to the server so that the corresponding operation corresponding to the event processed in the event processing module is executed by a third application stored in the at least one external device.

公开(公告)号：US09899453B2

公开(公告)日：2018-02-20

申请号：US15012604

申请日：2016-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/12 ,  H01L23/58 ,  H01L33/08

CPC classification number: H01L27/307 ,  H01L23/585 ,  H01L27/1214 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14685 ,  H01L27/14687 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

公开(公告)号：US08692240B2

公开(公告)日：2014-04-08

申请号：US13667820

申请日：2012-11-02

Applicant: Samsung Electronics Co., Ltd. ,  Osaka University

Inventor： Kyu-sik Kim ,  Masahiro Hiramoto

IPC: H01L51/00

CPC classification number: H01L51/424 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0054 ,  H01L51/0059 ,  H01L51/4253 ,  Y02E10/549

Abstract: A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer.

Abstract translation: 蓝色光电转换膜包括：通过沉积并四苯形成的p型层; 通过在p型层上共沉积并四苯和萘 - 四羧酸二酐（“NTCDA”）形成的p型n型层; 以及通过在p，n型层上沉积NTCDA形成的n型层。