Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.