公开(公告)号：US10789193B2

公开(公告)日：2020-09-29

申请号：US15716014

申请日：2017-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-shin Lee ,  Yo-han Lee

IPC: G06F13/38 ,  G06F13/40 ,  G06F13/42 ,  G11C16/26

Abstract: Provided are a device connected to another device by a single wire and a method of operating a system including the devices. The method of operating the device connected to the other device by the single wire includes transmitting a first packet to the other device, waiting to receive a second packet from the other device, and receiving the second packet from the other device. When the waiting to receive the second packet is started, electrically connecting a first end of a resistor to the first wire, and when the waiting to receive the second packet is terminated, electrically disconnecting a resistor from the first wire. A second end of the resistor is connected to either a logic high level voltage source or a logic low level voltage source.

公开(公告)号：US11250916B2

公开(公告)日：2022-02-15

申请号：US17173824

申请日：2021-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee

IPC: G11C16/16 ,  G11C16/08 ,  G11C16/10 ,  G11C16/34 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11582 ,  G11C16/04

Abstract: A memory device including at least one dummy word line over a substrate; a plurality of word lines over the dummy word line; and a plurality of vertical holes extending through the at least one dummy word line and the plurality of word lines in a direction perpendicular to the substrate and classified into channel holes and dummy holes, each of the channel holes being connected to a bit line. The method including performing an erase operation on dummy cells formed as the dummy word line and the dummy holes; verifying the erase operation; and performing a program operation on at least one of the dummy cells such that the at least one dummy cell has a higher threshold voltage than main cells formed as the dummy word line and the channel holes.

公开(公告)号：US10008270B2

公开(公告)日：2018-06-26

申请号：US15383408

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04 ,  G11C16/24 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459

Abstract: A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

公开(公告)号：US10964397B2

公开(公告)日：2021-03-30

申请号：US16936936

申请日：2020-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee

IPC: G11C16/16 ,  G11C16/08 ,  G11C16/10 ,  G11C16/34 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11582 ,  G11C16/04

Abstract: A memory device including at least one dummy word line over a substrate; a plurality of word lines over the dummy word line; and a plurality of vertical holes extending through the at least one dummy word line and the plurality of word lines in a direction perpendicular to the substrate and classified into channel holes and dummy holes, each of the channel holes being connected to a bit line. The method including performing an erase operation on dummy cells formed as the dummy word line and the dummy holes; verifying the erase operation; and performing a program operation on at least one of the dummy cells such that the at least one dummy cell has a higher threshold voltage than main cells formed as the dummy word line and the channel holes.

公开(公告)号：US10803952B2

公开(公告)日：2020-10-13

申请号：US16530265

申请日：2019-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee

IPC: G11C16/08 ,  G11C16/16 ,  G11C16/24 ,  G11C16/34 ,  G11C16/30 ,  G11C7/14 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11519

Abstract: A method of operating a memory device including a substrate; at least one dummy word line over the substrate; a plurality of word lines over the dummy word line; and a plurality of vertical holes extending through the at least one dummy word line and the plurality of word lines in a direction perpendicular to the substrate and classified into channel holes and dummy holes, each of the channel holes being connected to a bit line, the method including: performing an erase operation on dummy cells formed as the dummy word line and the dummy holes; verifying the erase operation; and performing a program operation on at least one of the dummy cells such that the at least one dummy cell has a higher threshold voltage than main cells formed as the dummy word line and the channel holes.

公开(公告)号：US09978458B2

公开(公告)日：2018-05-22

申请号：US15383132

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/34 ,  G11C16/28 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28

Abstract: A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.