公开(公告)号：US11437377B2

公开(公告)日：2022-09-06

申请号：US17030841

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Myung Gil Kang ,  Sadaaki Masuoka ,  Sang Hoon Lee ,  Sung Man Whang

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/04 ,  H01L21/02 ,  H01L29/16 ,  H01L21/8238

Abstract: A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.

公开(公告)号：US11227914B2

公开(公告)日：2022-01-18

申请号：US16776677

申请日：2020-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Sun Wook Kim ,  Seung Min Song ,  Nam Hyun Lee

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US12294005B2

公开(公告)日：2025-05-06

申请号：US18521253

申请日：2023-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Cheol Shin ,  Myung Gil Kang ,  Sadaaki Masuoka ,  Sang Hoon Lee ,  Sung Man Whang

IPC: H01L27/092 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.

公开(公告)号：US11862639B2

公开(公告)日：2024-01-02

申请号：US17894427

申请日：2022-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Myung Gil Kang ,  Sadaaki Masuoka ,  Sang Hoon Lee ,  Sung Man Whang

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/04 ,  H01L21/02 ,  H01L29/16 ,  H01L21/8238

CPC classification number: H01L27/0924 ,  H01L21/02532 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/6681 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/785

Abstract: A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.

公开(公告)号：US11710770B2

公开(公告)日：2023-07-25

申请号：US17575918

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Sun Wook Kim ,  Seung Min Song ,  Nam Hyun Lee

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

CPC classification number: H01L29/0673 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/42392

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US10833085B2

公开(公告)日：2020-11-10

申请号：US16439999

申请日：2019-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Myung Gil Kang ,  Sadaaki Masuoka ,  Sang Hoo Lee ,  Sung Man Whang

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/04 ,  H01L21/02 ,  H01L29/16 ,  H01L21/8238

Abstract: A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.

公开(公告)号：US11978770B2

公开(公告)日：2024-05-07

申请号：US17388225

申请日：2021-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Dong Ko ,  Woo Cheol Shin ,  Soo Jin Jeong

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L29/0847 ,  H01L29/66553

Abstract: A semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, first and second nanosheets stacked on the active pattern to be spaced apart from each other in a vertical direction, a gate electrode that extends in a second direction the active pattern, the gate electrode surrounding each of the first and second nanosheets, a source/drain region on at least one side of the gate electrode, and inner spacers between the gate electrode and the source/drain region, the inner spacers including a first inner spacer between the active pattern and the first nanosheet, and a second inner spacer between the first nanosheet and the second nanosheet, the second inner spacer having a first portion adjacent to the first nanosheet, and a second portion adjacent to the second nanosheet, the first portion being wider than the second portion.

公开(公告)号：US11501771B2

公开(公告)日：2022-11-15

申请号：US16643783

申请日：2018-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Nam Gook Cho ,  Eun Jin Chun ,  Seol Hee Jeon

IPC: G10L15/22 ,  G06F16/9035 ,  F24C7/08 ,  G10L15/08

Abstract: Disclosed herein is a cooking system: a cooking apparatus configured to input and output a speech, transmit speech data corresponding to the speech, and cook food in a cooking chamber; a first server configured to perform communication with the cooking apparatus, when speech data is received from the cooking apparatus, perform speech recognition based on the received speech data, transmit response information to the speech recognition to the cooking apparatus, obtain a menu requested by the user based on the received speech data, and transmit a cooking time and a cooking temperature for the obtained menu to the cooking apparatus; and a second server configured to store information about at least one recipe for a plurality of menus, perform communication with the first server, and transmit the information about at least one recipe to the first server.

公开(公告)号：US11501770B2

公开(公告)日：2022-11-15

申请号：US16643469

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd

Inventor： Eun Jin Chun ,  Woo Cheol Shin ,  Nam Gook Cho ,  Young Soo Do ,  Min Hyung Lee ,  Pil Soo Lee

IPC: G10L15/22 ,  G10L15/18 ,  G10L15/30

Abstract: Provided is a system, server, and method for speech recognition capable of collectively setting a plurality of setting items for device control through an utterance of a single sentence provided in the form of natural language. The system includes: a home appliance configured to receive a speech command that is generated through an utterance of a single sentence for control of the home appliance; and a server configured to receive the speech command in the single sentence from the home appliance and interpret the speech command of the single sentence through multiple intent determination.