-
公开(公告)号:US20240030103A1
公开(公告)日:2024-01-25
申请号:US18133141
申请日:2023-04-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taeyoung LEE
IPC: H01L23/48 , H01L25/065
CPC classification number: H01L23/481 , H01L25/0657 , H01L2225/06562 , H01L2224/16146 , H01L24/16
Abstract: A semiconductor package includes: a first semiconductor chip including a plurality of first through-electrodes and a plurality of first shared electrodes, wherein the first through-electrodes are arranged in a first direction, wherein the plurality of first shared.
electrodes are spaced apart from the plurality of first through-electrodes in a second direction, intersecting the first direction, and are electrically connected to the plurality of first through-electrodes, respectively; and a second semiconductor chip including a plurality of second through-electrodes and a plurality of second shared electrodes, wherein the plurality of second through-electrodes are disposed on the first semiconductor chip and are arranged in the first direction, wherein the plurality of second shared electrodes are spaced apart from the plurality of second through-electrodes in the second direction and are electrically connected to the plurality of second through-electrodes, respectively.-
公开(公告)号:US20240063193A1
公开(公告)日:2024-02-22
申请号:US18210958
申请日:2023-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyungdon MUN , Juhyeon KIM , Sangcheon PARK , Taeyoung LEE
IPC: H01L25/10 , H01L23/498 , H01L23/00
CPC classification number: H01L25/105 , H01L23/49827 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/80 , H01L2224/08145 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/8082 , H01L2924/1436 , H01L2924/1432
Abstract: A semiconductor package includes a first semiconductor chip including a first semiconductor substrate having a first active surface and a first inactive surface opposite to each other, a plurality of through electrodes penetrating the first semiconductor substrate, and a rear cover layer covering the first inactive surface, a second semiconductor chip stacked on the first semiconductor chip and including a second semiconductor substrate having a second active surface and a second inactive surface opposite to each other, and a front cover layer covering the second active surface, a plurality of signal pad structures penetrating the rear cover layer and the front cover layer to be electrically connected to the plurality of through electrodes, and a plurality of dummy pad structures apart from the plurality of signal pad structures in a horizontal direction, and penetrating the rear cover layer and the front cover layer.
-
3.
公开(公告)号:US20240032312A1
公开(公告)日:2024-01-25
申请号:US18355004
申请日:2023-07-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taeyoung LEE , Kyungdon MUN
IPC: H10B80/00 , H01L25/065 , H01L23/00 , H01L23/538
CPC classification number: H10B80/00 , H01L25/0652 , H01L24/16 , H01L23/5384 , H01L2224/16227
Abstract: A semiconductor chip stack structure may include a buffer chip, a first memory chip on the buffer chip and including a plurality of first banks, a second memory chip on the first memory chip and including a plurality of second banks, first chiplets between the first memory chip and the second memory chip and configured to perform calculations on data stored in the plurality of first banks of the first memory chip, second chiplets between the first memory chip and the second memory chip and configured to perform calculations on data stored in the plurality of second banks of the second memory chip, and a third memory chip on the buffer chip. The third memory chip may include a plurality of third banks. The third memory chip may be electrically connected to the first memory chip and the second memory chip.
-
公开(公告)号:US20240021591A1
公开(公告)日:2024-01-18
申请号:US18217655
申请日:2023-07-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taeyoung LEE
IPC: H01L25/10 , H01L23/31 , H01L23/00 , H01L23/538 , H01L23/498
CPC classification number: H01L25/105 , H01L23/3135 , H01L24/32 , H01L23/5384 , H01L23/49822 , H01L24/16 , H01L24/08 , H01L2924/1436 , H01L2224/08148 , H01L2224/32245 , H01L2924/1438 , H01L2224/32225 , H01L2224/16238 , H01L2224/16148 , H01L2224/08238 , H01L2224/16227
Abstract: A semiconductor package may include: a substrate; an upper chip disposed on the substrate; a first lower semiconductor chip disposed between the substrate and the upper chip, and electrically connected to the substrate; a second lower semiconductor chip disposed between the substrate and the upper chip, and electrically connected to the substrate; and an interposer chip disposed between the substrate and the upper chip, wherein the interposer chip includes a through-via electrically connecting the upper chip to the substrate, wherein the first lower semiconductor chip is electrically connected to the upper chip, wherein a lower surface of the upper chip is disposed on an upper surface of the first lower semiconductor chip, and wherein the second lower semiconductor chip is electrically connected to the upper chip, wherein a lower surface of the upper chip is disposed on an upper surface of the second lower semiconductor chip.
-
5.
公开(公告)号:US20160291141A1
公开(公告)日:2016-10-06
申请号:US15086920
申请日:2016-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwanghoon HAN , Taeyoung LEE , Seong-Hee PARK , Chilyoul YANG , Myounghwan LEE
CPC classification number: G01S11/14 , G01S3/802 , G01S3/8083 , G01S5/0072 , G01S5/18 , G01S5/28 , G01S15/74
Abstract: An apparatus and a method for measuring distance by using electronic devices are provided. The apparatus includes an output unit, an input unit, and a controller. The output unit may be configured to transmit the first sound wave, and the input unit may be configured to receive the second sound wave from another apparatus that receives the first sound wave. The controller may be configured to determine the distance between the apparatus and the another apparatus based on a first value and a second value. The first value may correspond to a difference between a timing of initiating a transmission of the first sound wave and a timing of receiving the second sound wave, and the second value may correspond to a difference between a timing when the another apparatus initiates the transmission of the second sound wave and the timing when the another apparatus receives the first sound wave.
Abstract translation: 提供了一种使用电子设备测量距离的装置和方法。 该装置包括输出单元,输入单元和控制器。 输出单元可以被配置为发送第一声波,并且输入单元可以被配置为从接收第一声波的另一装置接收第二声波。 控制器可以被配置为基于第一值和第二值来确定装置和另一装置之间的距离。 第一值可以对应于开始第一声波的发送的定时与接收第二声波的定时之间的差异,第二值可以对应于另一装置发起传输的定时之间的差异 第二声波和另一装置接收到第一声波时的定时。
-
公开(公告)号:US20150004908A1
公开(公告)日:2015-01-01
申请号:US14317725
申请日:2014-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taeyoung LEE , Jaeeun KANG , Hansu KANG , Bongjhin SHIN , Chilyoul YANG , Myounghwan LEE , Chunho LEE , Jihye LEE
Abstract: A method and an electronic device for service negotiation are provided. The method includes sensing, by the electronic device, a counterpart device through a first protocol, transmitting a request message to the counterpart device through the first protocol, the request message including indication information indicating that the electronic device requests a first service and first service information regarding the first service, and connecting with the counterpart device through a second protocol, when a selection message including indication information selecting the first service is received from the counterpart device through the first protocol, and, after connecting through the second protocol, executing the first service with the counterpart device using the first service information. The request message and the selection message each includes connection information for a connection using the second protocol, and the electronic device and the counterpart device use the connection information to perform the connection using the second protocol.
Abstract translation: 提供了一种用于服务协商的方法和电子设备。 该方法包括:通过电子设备通过第一协议检测对方设备,通过第一协议向对方设备发送请求消息,所述请求消息包括指示电子设备请求第一服务的指示信息和第一服务信息 关于第一服务,并且通过第二协议与对方设备连接,当通过第一协议从对方设备接收到包括选择第一服务的指示信息的选择消息时,并且在连接到第二协议之后,执行第一服务 使用第一服务信息与对方设备进行服务。 请求消息和选择消息各自包括使用第二协议的连接的连接信息,并且电子设备和对方设备使用连接信息来执行使用第二协议的连接。
-
公开(公告)号:US20240120319A1
公开(公告)日:2024-04-11
申请号:US18376028
申请日:2023-10-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Taeyoung LEE
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/522
CPC classification number: H01L25/0657 , H01L23/3107 , H01L23/481 , H01L23/5226 , H01L24/05 , H01L24/08 , H01L24/13 , H01L2224/05624 , H01L2224/05647 , H01L2224/08145 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147
Abstract: A semiconductor package includes a first semiconductor structure including a first semiconductor layer having a first active surface and a first circuit device thereon and a first inactive surface and first bonding layer; a second semiconductor structure on the first semiconductor structure and including a second semiconductor layer having a second active surface and second circuit device thereon and a second inactive surface, a second frontside bonding layer, and a second backside bonding layer on the second inactive surface; and a third semiconductor structure on the second semiconductor structure and including a third semiconductor layer having a third active surface including a third circuit device thereon and a third inactive surface, and a third bonding layer, wherein the first bonding layer is bonded to the second frontside bonding layer, and the third bonding layer is bonded to the second backside bonding layer.
-
公开(公告)号:US20240079380A1
公开(公告)日:2024-03-07
申请号:US18334062
申请日:2023-06-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonghyun BAEK , Jaekyu SUNG , Dongok KWAK , Taeyoung LEE
IPC: H01L25/065 , H01L23/00
CPC classification number: H01L25/0657 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/32145 , H01L2224/48147 , H01L2224/48227 , H01L2224/73215 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562
Abstract: A stacked semiconductor package may include a package base substrate, a first chip stack including a first semiconductor chips stacked sequentially on the package base substrate, a second chip stack including second semiconductor chips stacked sequentially on the first chip stack, and bonding wires electrically connecting the first semiconductor chips and the second semiconductor chips to the package base substrate. Each of the first semiconductor chips may be shifted by a first interval in a first horizontal direction to have a step shape. Each of the second semiconductor chips may be shifted by the first interval in a second horizontal direction, opposite to the first horizontal direction, to have a step shape. A lowermost second semiconductor chip may be shifted from an uppermost first semiconductor chip by a second interval in the second direction. The second interval may be greater than the first interval.
-
-
-
-
-
-
-