公开(公告)号：US09812213B2

公开(公告)日：2017-11-07

申请号：US15098791

申请日：2016-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Ryun Kim ,  Sang-Yong Yoon

IPC: G11C16/28 ,  G11C11/56 ,  G11C16/04

CPC classification number: G11C16/28 ,  G11C11/5642 ,  G11C16/0483

Abstract: A flash memory, a flash memory system, and an operating method thereof. The method of operating a flash memory includes counting the number of memory cells having threshold voltages included in a first adjacent threshold voltage range (defined by a first reference read voltage for distinguishing between initially separated adjacently located threshold voltage distributions and a first search read voltage having a first voltage difference from the first reference read voltage), and a second adjacent threshold voltage range (defined by the first reference read voltage and a second search read voltage having a second voltage difference from the first reference read voltage), and setting a first optimal read voltage based on the difference between the first and second counted numbers of the memory cells.

公开(公告)号：US09183944B2

公开(公告)日：2015-11-10

申请号：US14272906

申请日：2014-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Hwan Kim ,  Sang-Yong Yoon ,  Kyung-Ryun Kim

IPC: G11C16/04 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/3427 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3459

Abstract: A method of writing data in a non-volatile memory device includes receiving a program command and a first row address corresponding to a first word line; performing a first partial programming operation with respect to first memory cells coupled to the first word line; performing a second partial programming operation with respect to second memory cells coupled to a second word line adjacent to the first word line; performing a first verification operation by verifying the first partial programming operation; and selectively performing a first additional programming operation with respect to the first memory cells depending on a result of the first verification operation.

Abstract translation: 一种在非易失性存储器件中写入数据的方法包括：接收与第一字线对应的程序命令和第一行地址; 对与第一字线耦合的第一存储器单元执行第一部分编程操作; 对与第一字线相邻的第二字线耦合的第二存储器单元执行第二部分编程操作; 通过验证第一部分编程操作来执行第一验证操作; 以及根据所述第一验证操作的结果选择性地执行关于所述第一存储器单元的第一附加编程操作。

公开(公告)号：US10217517B2

公开(公告)日：2019-02-26

申请号：US15639234

申请日：2017-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Jin Yim ,  Sang-Yong Yoon

IPC: G11C29/00 ,  G11C16/34 ,  G11C29/52 ,  G11C29/42 ,  G06F11/07 ,  G11C16/10 ,  G11C16/26

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

公开(公告)号：US10714194B2

公开(公告)日：2020-07-14

申请号：US16248568

申请日：2019-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Jin Yim ,  Sang-Yong Yoon

IPC: G11C29/00 ,  G11C16/34 ,  G11C29/52 ,  G11C29/42 ,  G06F11/07 ,  G11C16/10 ,  G11C16/26

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

公开(公告)号：US09728279B2

公开(公告)日：2017-08-08

申请号：US14456572

申请日：2014-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Jin Yim ,  Sang-Yong Yoon

IPC: G11C29/00 ,  G11C29/52 ,  G11C16/34 ,  G11C29/42

CPC classification number: G11C16/3422 ,  G06F11/073 ,  G06F11/0751 ,  G06F11/079 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/42 ,  G11C29/52

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

公开(公告)号：US09502137B2

公开(公告)日：2016-11-22

申请号：US14205482

申请日：2014-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yong Yoon ,  Kyung-Ryun Kim ,  Jin-Young Chun

IPC: G11C29/00 ,  G11C29/50 ,  G06F11/10 ,  G11C29/02 ,  H03M13/39 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C29/50004 ,  G06F11/1048 ,  G06F11/1068 ,  G11C11/56 ,  G11C16/34 ,  G11C29/026 ,  G11C29/028 ,  H03M13/3927

Abstract: In a method of optimizing a log likelihood ratio (LLR) used to correct errors related to data stored in a nonvolatile memory device, variation of threshold voltage distribution for a plurality of memory cells included in the nonvolatile memory device is monitored, and the LLR for the memory cells is updated based on a monitoring result. Although the characteristics of the memory cells are deteriorated, the LLR is continuously maintained to the optimal value.

Abstract translation: 在优化用于校正与存储在非易失性存储器件中的数据有关的误差的对数似然比（LLR）的方法中，监视非易失性存储器件中包括的多个存储器单元的阈值电压分布的变化，并且LLR用于 基于监视结果来更新存储器单元。 虽然存储单元的特性恶化，但是LLR连续地保持在最佳值。

公开(公告)号：US09093171B2

公开(公告)日：2015-07-28

申请号：US14467899

申请日：2014-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Si-Hwan Kim ,  Sang-Yong Yoon

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/10 ,  G11C16/04

CPC classification number: G11C16/3404 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3459 ,  G11C2211/5641 ,  G11C2211/5644

Abstract: A method of operating a nonvolatile memory device by programming pages using a N-bit programming mode until a threshold voltage distribution shift for an un-programmed page in the same memory block is determined, and thereafter programming the un-programmed page using a M-bit programming mode, where M is less than N.

Abstract translation: 一种通过使用N位编程模式编程页面来操作非易失性存储器件的方法，直到确定了相同存储器块中的未编程页面的阈值电压分配移位，然后使用M- 位编程模式，其中M小于N.

公开(公告)号：US09852795B2

公开(公告)日：2017-12-26

申请号：US15272776

申请日：2016-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Ku Kang ,  Sang-Yong Yoon ,  Joon-Suc Jang

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/24 ,  G11C16/26 ,  G11C16/34 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  G11C29/00 ,  G11C7/10 ,  G11C29/44

CPC classification number: G11C16/0466 ,  G11C7/1063 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/832 ,  G11C2029/4402 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method of operating a nonvolatile memory device includes performing a first memory operation on a first memory block of a plurality of memory blocks and a curing operation on a portion of the first memory block when a status signal indicates a ready state of the nonvolatile memory device during an interval equal to or greater than a reference interval after the first memory operation is completed. The nonvolatile memory device includes the plurality of memory blocks, each memory block including a plurality of vertical strings extending in a vertical direction with respect to a substrate.