公开(公告)号：US10748632B2

公开(公告)日：2020-08-18

申请号：US16198013

申请日：2018-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Won Yun ,  Hye-Jin Yim

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/08 ,  G11C16/04 ,  G11C11/56 ,  G11C16/14 ,  H01L27/11582

Abstract: A nonvolatile memory device includes multiple memory cells including first memory cells and second memory cells. A method of programming the nonvolatile memory device includes: performing first programming to apply a programming forcing voltage to a bit line of each of the first memory cells; and dividing the second memory cells into a first cell group, a second cell group, and a third cell group, based on a threshold voltage of the second memory cells after performing the first programming. The method also includes performing second programming to apply a programming inhibition voltage to the bit line of each of the first memory cells and a bit line of each of memory cells of the first cell group. A level of the programming forcing voltage is lower than that of the programming inhibition voltage.

公开(公告)号：US10217517B2

公开(公告)日：2019-02-26

申请号：US15639234

申请日：2017-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Jin Yim ,  Sang-Yong Yoon

IPC: G11C29/00 ,  G11C16/34 ,  G11C29/52 ,  G11C29/42 ,  G06F11/07 ,  G11C16/10 ,  G11C16/26

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

公开(公告)号：US10714194B2

公开(公告)日：2020-07-14

申请号：US16248568

申请日：2019-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Jin Yim ,  Sang-Yong Yoon

IPC: G11C29/00 ,  G11C16/34 ,  G11C29/52 ,  G11C29/42 ,  G06F11/07 ,  G11C16/10 ,  G11C16/26

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

公开(公告)号：US09728279B2

公开(公告)日：2017-08-08

申请号：US14456572

申请日：2014-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Jin Yim ,  Sang-Yong Yoon

IPC: G11C29/00 ,  G11C29/52 ,  G11C16/34 ,  G11C29/42

CPC classification number: G11C16/3422 ,  G06F11/073 ,  G06F11/0751 ,  G06F11/079 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/42 ,  G11C29/52

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.