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公开(公告)号：US09183944B2
公开(公告)日：2015-11-10
申请号：US14272906
申请日：2014-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Si-Hwan Kim , Sang-Yong Yoon , Kyung-Ryun Kim
CPC classification number: G11C16/3427 , G11C11/5628 , G11C16/0483 , G11C16/3459
Abstract: A method of writing data in a non-volatile memory device includes receiving a program command and a first row address corresponding to a first word line; performing a first partial programming operation with respect to first memory cells coupled to the first word line; performing a second partial programming operation with respect to second memory cells coupled to a second word line adjacent to the first word line; performing a first verification operation by verifying the first partial programming operation; and selectively performing a first additional programming operation with respect to the first memory cells depending on a result of the first verification operation.
Abstract translation: 一种在非易失性存储器件中写入数据的方法包括：接收与第一字线对应的程序命令和第一行地址; 对与第一字线耦合的第一存储器单元执行第一部分编程操作; 对与第一字线相邻的第二字线耦合的第二存储器单元执行第二部分编程操作; 通过验证第一部分编程操作来执行第一验证操作; 以及根据所述第一验证操作的结果选择性地执行关于所述第一存储器单元的第一附加编程操作。
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2.发明授权Method of operating a nonvolatile memory device having read disturbed page 有权操作具有读取干扰页面的非易失性存储器件的方法公开(公告)号：US09093171B2
公开(公告)日：2015-07-28
申请号：US14467899
申请日：2014-08-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Si-Hwan Kim , Sang-Yong Yoon
CPC classification number: G11C16/3404 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3459 , G11C2211/5641 , G11C2211/5644
Abstract: A method of operating a nonvolatile memory device by programming pages using a N-bit programming mode until a threshold voltage distribution shift for an un-programmed page in the same memory block is determined, and thereafter programming the un-programmed page using a M-bit programming mode, where M is less than N.
Abstract translation: 一种通过使用N位编程模式编程页面来操作非易失性存储器件的方法，直到确定了相同存储器块中的未编程页面的阈值电压分配移位，然后使用M- 位编程模式，其中M小于N.
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公开(公告)号：US20130250680A1
公开(公告)日：2013-09-26
申请号：US13896141
申请日：2013-05-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Si-Hwan Kim , Joon-Suc Jang , Duck-Kyeun Woo
IPC: G11C16/10
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/3468
Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.
Abstract translation: 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。
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公开(公告)号：US08681545B2
公开(公告)日：2014-03-25
申请号：US13896141
申请日：2013-05-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Si-Hwan Kim , Joon-Suc Jang , Duck-Kyeun Woo
IPC: G11C16/10
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/3468
Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.
Abstract translation: 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。
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