公开(公告)号：US20190221663A1

公开(公告)日：2019-07-18

申请号：US16367813

申请日：2019-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon KIM ,  Bon-Young KOO ,  Nam-Kyu KIM ,  Woo-Bin SONG ,  Byeong-Chan LEE ,  Su-Jin JUNG

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/08

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

公开(公告)号：US20160087104A1

公开(公告)日：2016-03-24

申请号：US14861748

申请日：2015-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYEONGCHAN LEE ,  Nam-Kyu KIM ,  JinBum KIM ,  KWAN HEUM LEE ,  Choeun LEE ,  Sujin JUNG

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7851 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848

Abstract: Provided are a semiconductor device and a method of fabricating the same. The device may include an active pattern protruding from a substrate, gate structures crossing the active pattern, and a source/drain region provided between adjacent ones of the gate structures. The source/drain region may include a source/drain epitaxial layer in a recessed region, which is formed in the active pattern between the adjacent ones of the gate structures. Further, an impurity diffusion region may be provided in the active pattern to enclose the source/drain epitaxial layer along inner surfaces of the recessed region.

Abstract translation: 提供半导体器件及其制造方法。 器件可以包括从衬底突出的有源图案，与有源图案交叉的栅极结构以及设置在相邻栅极结构之间的源极/漏极区域。 源极/漏极区域可以包括凹陷区域中的源极/漏极外延层，其形成在相邻的栅极结构之间的有源图案中。 此外，可以在有源图案中提供杂质扩散区域以沿着凹陷区域的内表面包围源极/漏极外延层。

公开(公告)号：US20160081204A1

公开(公告)日：2016-03-17

申请号：US14848550

申请日：2015-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Il PARK ,  Nam-Kyu KIM ,  Tomohiro HARATA

IPC: H05K5/00 ,  H05K5/02

CPC classification number: G06F1/1652 ,  G06F1/1624 ,  G06F1/1626 ,  G06F15/0291 ,  H04M1/0237 ,  H04M1/0268

Abstract: An electronic device is provided. The electronic device includes a main body, a flexible display mounted to be movable in a first direction on the main body, and a support unit disposed on the main body that faces a surface of the flexible display and moves in the direction on the main body. A portion of the flexible display is selectively disposed within the main body together with the support unit while moving on the main body. The electronic device as described above may be implemented according to various embodiments.

Abstract translation: 提供电子设备。 该电子设备包括：主体，安装成能够在主体上沿第一方向移动的柔性显示器;以及支撑单元，其设置在主体上，该支撑单元面向柔性显示器的表面并沿着主体的方向移动 。 柔性显示器的一部分在主体上移动时与支撑单元一起选择性地设置在主体内。 如上所述的电子设备可以根据各种实施例来实现。

公开(公告)号：US20170117406A1

公开(公告)日：2017-04-27

申请号：US15398788

申请日：2017-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon KIM ,  Bon-Young KOO ,  Nam-Kyu KIM ,  Woo-Bin SONG ,  Byeong-Chan LEE ,  Su-Jin JUNG

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.