公开(公告)号：US20230070312A1

公开(公告)日：2023-03-09

申请号：US17740838

申请日：2022-05-10

Applicant: Samsung Electronics Co., Ltd. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Eunhyoung CHO ,  Sunghee LEE ,  Jeongyub LEE ,  Han-Bo-Ram LEE

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40

Abstract: A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer on a side wall of the gap; forming a first precursor layer by adsorbing a first reactant into a bottom of the gap and the side wall of the gap around the bottom of the gap; and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap by adsorbing a second reactant into the first precursor layer. The forming of the first reaction inhibition layer may include adsorbing a first reaction inhibitor into the side wall of the gap; and forming a second reaction inhibitor by removing a specific ligand from the first reaction inhibitor.

公开(公告)号：US20170064839A1

公开(公告)日：2017-03-02

申请号：US15065488

申请日：2016-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Yunsung Woo ,  Changseung LEE ,  Eunhyoung CHO

IPC: H05K3/02 ,  B23K26/384 ,  B23K26/0622 ,  H05K3/18

CPC classification number: B23K26/0622 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0853 ,  B23K26/0869 ,  B23K26/384 ,  B23K26/386 ,  B23K26/389 ,  H01L31/1884 ,  H05K3/0047 ,  H05K3/146 ,  H05K2201/0108 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0323 ,  H05K2201/10128 ,  H05K2203/107

Abstract: A method of patterning holes includes placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof, generating a pulse laser from the laser system, and forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in motion.

Abstract translation: 图案化孔的方法包括将基板放置在激光系统的台上，所述基板在其表面上具有石墨烯层，从激光系统产生脉冲激光，并且形成多个彼此间隔开的孔图案 石墨烯层通过在石墨烯层运动时照射脉冲激光器。

公开(公告)号：US20230144948A1

公开(公告)日：2023-05-11

申请号：US17726064

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul LEEM ,  Jeongyub LEE ,  Haesung KIM

IPC: G02B1/00

CPC classification number: G02B1/005

Abstract: An optical device forms a refractive index distribution for exhibiting a certain phase delay profile with respect to light in a visible light wavelength, and includes a nanopattern layer including a crystalline compound having a refractive index greater than 3 with respect to the light in the visible light wavelength band and a height equal to or less than 2 μm. The nanopattern layer may include the crystalline compound grown according to a selective epitaxial growth method, and accordingly, may have a height beneficial for a manufacturing process. Thus, the efficiency of the optical device may be improved.

公开(公告)号：US20200257142A1

公开(公告)日：2020-08-13

申请号：US16857756

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Kiyeon YANG ,  Youngsun CHOI ,  Seokho SONG ,  Jaewoong YOON ,  Choloong HAN ,  Yongsung KIM ,  Jeongyub LEE ,  Changseung LEE

IPC: G02F1/09 ,  G02B6/12 ,  G02B6/293 ,  G02F1/31 ,  G02F1/095 ,  G02B6/42 ,  G02B6/27

Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

公开(公告)号：US20180224574A1

公开(公告)日：2018-08-09

申请号：US15805864

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub LEE ,  Changseung LEE ,  Yongsung KIM ,  Jaekwan KIM ,  Byonggwon SONG ,  Sanghoon SONG ,  Kiyeon YANG

IPC: G02B1/00 ,  G02B1/02 ,  C23C14/34 ,  C23C14/58 ,  C23C14/06

CPC classification number: G02B1/002 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/5806 ,  C23C16/401 ,  C23C16/50 ,  G02B1/02 ,  G02B3/00

Abstract: A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.

公开(公告)号：US20160247906A1

公开(公告)日：2016-08-25

申请号：US15026681

申请日：2014-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongsung KIM ,  Changyoul MOON ,  Yongyoung PARK ,  Wooyoung YANG ,  Jeongyub LEE ,  Jooho LEE

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/10 ,  H01L29/08 ,  H01L29/24 ,  H01L29/423 ,  H01L29/16 ,  H01L21/3105 ,  H01L21/306 ,  H01L29/47 ,  H01L29/06

CPC classification number: H01L29/78 ,  H01L21/30625 ,  H01L21/31051 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/7781

Abstract: Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括源极，漏极，源极和漏极之间的半导体元件以及设置在源极和半导体元件上并与漏极间隔开的石墨烯层。 源极和漏极的表面与半导体元件的表面基本上共面。 半导体元件可以与源极间隔开并且可以接触漏极。 石墨烯层可以具有平面结构。 栅极绝缘层和栅极可以设置在石墨烯层上。 半导体器件可以是晶体管。 该半导体器件可以具有一个截击器结构。 半导体器件可以是平面型石墨烯阻尼器。

公开(公告)号：US20240203825A1

公开(公告)日：2024-06-20

申请号：US18206472

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo HONG ,  Sungchan KANG ,  Daehyuk SON ,  Jeongyub LEE

IPC: H01L23/473 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/473 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16221 ,  H01L2924/16151 ,  H01L2924/16152

Abstract: A semiconductor device includes a semiconductor chip including a semiconductor integrated circuit; a cooling channel including a surface of the semiconductor chip and configured to provide a passage for a coolant to cool the semiconductor chip; and a plurality of flexible capillary patterns on the surface of the semiconductor chip inside the cooling channel and configured to move the coolant by capillary action, wherein each capillary pattern of the plurality of flexible capillary patterns may include a first portion in a length direction of the capillary pattern that contacts and is supported by the surface of the semiconductor chip, and a second portion in the length direction that is spaced apart from and unsupported by the surface of the semiconductor chip, and a curvature of the second portion of each capillary pattern of the plurality of flexible capillary patterns changes according to temperature.

公开(公告)号：US20230326949A1

公开(公告)日：2023-10-12

申请号：US18111375

申请日：2023-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub LEE ,  Youngchul LEEM ,  Eunhyoung CHO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14625 ,  H01L27/14694

Abstract: Provided is an image sensor including a plurality of first electrode layers spaced apart from each other, a second electrode layer opposite to the plurality of first electrode layers, and a pixel layer provided between the plurality of first electrode layers and the second electrode layer, the pixel layer including a plurality of nanorod pixels, wherein a size of each nanorod pixel among the plurality of nanorod pixels is less than 1 μm, wherein the plurality of nanorod pixels include a first pixel including a compound semiconductor, and wherein the first pixel includes a first compound semiconductor layer doped with a first dopant, a second compound semiconductor layer that is undoped, and a third compound semiconductor layer doped with a second dopant different from the first dopant.

公开(公告)号：US20230094482A1

公开(公告)日：2023-03-30

申请号：US17724861

申请日：2022-04-20

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Jeongyub LEE ,  Geunyoung YEOM ,  Heeju KIM ,  Jongwoo HONG ,  Yeonhee KIM ,  Kideok BAE ,  Haesoo BAE

IPC: G02B1/00 ,  G03F1/80

Abstract: A meta-optical device and a method of manufacturing a metasurface are provided. The meta-optical device includes a substrate and a nanostructure, wherein the nanostructure includes a first portion and a second portion that differ in at least one of a diameter and a period, wherein a ratio of an etch depth of the second portion to an etch depth of the first portion is about 0.9 to about 1.1, and the nanostructure includes at least one of sulfur, fluorine, and fluorocarbon.

公开(公告)号：US20210395888A1

公开(公告)日：2021-12-23

申请号：US17336773

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Eunhyoung CHO ,  Hanboram LEE ,  Sunghee LEE ,  Jeongyub LEE ,  Chi Thang NGUYEN

IPC: C23C16/455 ,  C23C16/40

Abstract: A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.